SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20210111114A1

    公开(公告)日:2021-04-15

    申请号:US16884212

    申请日:2020-05-27

    Abstract: A semiconductor package includes a semiconductor chip, a redistribution structure below the semiconductor chip, a first insulating layer below the redistribution structure, a pad below the first insulating layer, the pad being in contact with the redistribution structure, and a bump below the pad, wherein a horizontal maximum length of an upper portion of the pad is greater than a horizontal maximum length of a lower portion of the pad.

    SEMICONDUCTOR PACKAGE
    6.
    发明申请

    公开(公告)号:US20220406702A1

    公开(公告)日:2022-12-22

    申请号:US17892215

    申请日:2022-08-22

    Abstract: A semiconductor package includes a semiconductor chip, a redistribution structure below the semiconductor chip, a first insulating layer below the redistribution structure, a pad below the first insulating layer, the pad being in contact with the redistribution structure, and a bump below the pad, wherein a horizontal maximum length of an upper portion of the pad is greater than a horizontal maximum length of a lower portion of the pad.

    SEMICONDUCTOR PACKAGE WITH REDISTRIBUTION SUBSTRATE HAVING EMBEDDED PASSIVE DEVICE

    公开(公告)号:US20240021608A1

    公开(公告)日:2024-01-18

    申请号:US18478056

    申请日:2023-09-29

    Abstract: Disclosed is a semiconductor package including: a redistribution substrate; at least one passive device in the redistribution substrate, the passive device including a first terminal and a second terminal; and a semiconductor chip on a top surface of the redistribution substrate, the semiconductor chip vertically overlapping at least a portion of the passive device, wherein the redistribution substrate includes: a dielectric layer in contact with a first lateral surface, a second lateral surface opposite to the first lateral surface, and a bottom surface of the passive device; a lower conductive pattern on the first terminal; a lower seed pattern provided between the first terminal and the conductive pattern, and directly connected to the first terminal; a first upper conductive pattern on the second terminal and a first upper seed pattern provided between the second terminal and the first upper conductive pattern, and directly connected to the second terminal

    SEMICONDUCTOR PACKAGE
    9.
    发明申请

    公开(公告)号:US20230071812A1

    公开(公告)日:2023-03-09

    申请号:US17846245

    申请日:2022-06-22

    Abstract: A semiconductor package includes a substrate including a redistribution layer, a chip structure including a first semiconductor chip disposed on the substrate and including a first through-electrode, a second semiconductor chip disposed on the first semiconductor chip and electrically connected to the first semiconductor chip by the first through-electrode, and a first encapsulant at least partially surrounding the second semiconductor chip. A first connection bump disposed between the substrate and the chip structure and electrically connects the first through-electrode to the redistribution layer, a second connection bump disposed below the substrate and electrically connects to the redistribution layer, and a second encapsulant e the chip structure on the substrate. The first semiconductor chip is connected to and faces the second semiconductor chip.

    SEMICONDUCTOR PACKAGE WITH REDISTRIBUTION SUBSTRATE

    公开(公告)号:US20220157810A1

    公开(公告)日:2022-05-19

    申请号:US17359110

    申请日:2021-06-25

    Abstract: Disclosed is a semiconductor package including: a redistribution substrate; at least one passive device in the redistribution substrate, the passive device including a first terminal and a second terminal; and a semiconductor chip on a top surface of the redistribution substrate, the semiconductor chip vertically overlapping at least a portion of the passive device, wherein the redistribution substrate includes: a dielectric layer in contact with a first lateral surface, a second lateral surface opposite to the first lateral surface, and a bottom surface of the passive device; a lower conductive pattern on the first terminal; a lower seed pattern provided between the first terminal and the conductive pattern, and directly connected to the first terminal; a first upper conductive pattern on the second terminal and a first upper seed pattern provided between the second terminal and the first upper conductive pattern, and directly connected to the second terminal

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