公开(公告)号：US10050132B2

公开(公告)日：2018-08-14

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

公开(公告)号：US09882061B2

公开(公告)日：2018-01-30

申请号：US15070320

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Toriumi ,  Takashi Hamada

IPC: H01L21/28 ,  H01L21/477 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04 ,  H01L21/02 ,  H01L23/528 ,  H01L23/522 ,  H01L27/12 ,  H01L27/146

CPC classification number: H01L29/7869 ,  H01L21/02211 ,  H01L21/28158 ,  H01L21/477 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78696

Abstract: A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×1018 atoms/cm3 or lower.

公开(公告)号：US20140319514A1

公开(公告)日：2014-10-30

申请号：US14252348

申请日：2014-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Satoshi Toriumi ,  Kazuki Tanemura

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US08603899B2

公开(公告)日：2013-12-10

申请号：US13660449

申请日：2012-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/78678 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675

Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

公开(公告)号：US20130059404A1

公开(公告)日：2013-03-07

申请号：US13660449

申请日：2012-10-25

Applicant: Semiconductor Energy Laboratory Co.,Ltd.

Inventor： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi

IPC: H01L33/00

CPC classification number: H01L29/78678 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675

Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Abstract translation: 目前，为了得到满意的膜，在各成膜室中进行通过非晶硅膜的基膜的成膜工序。 当在具有上述成膜条件的单个成膜室中进行通过非晶硅膜的基膜的连续形成时，在结晶过程中不能充分结晶。 通过使用用氢稀释的硅烷气体形成非晶硅膜，即使在单一成膜室中通过非晶硅膜连续形成基底膜，也在结晶过程中充分获得结晶。

公开(公告)号：US20150179810A1

公开(公告)日：2015-06-25

申请号：US14575052

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US10147747B2

公开(公告)日：2018-12-04

申请号：US14824268

申请日：2015-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Toriumi ,  Yoshikazu Hiura ,  Mai Sugikawa

IPC: H01L23/52 ,  H01L27/12 ,  H01L29/786 ,  H01L23/532 ,  H01L21/768 ,  H01L27/06 ,  H01L21/8258 ,  H01L27/088 ,  H01L27/092 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.

公开(公告)号：US09755083B2

公开(公告)日：2017-09-05

申请号：US15245268

申请日：2016-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Satoshi Toriumi ,  Kazuki Tanemura

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

公开(公告)号：US09450102B2

公开(公告)日：2016-09-20

申请号：US14252348

申请日：2014-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Satoshi Toriumi ,  Kazuki Tanemura

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US09044793B2

公开(公告)日：2015-06-02

申请号：US13680187

申请日：2012-11-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Toriumi ,  Makoto Furuno

IPC: H01L21/00 ,  B08B7/04 ,  H01L21/20 ,  B08B7/00 ,  C23C16/44 ,  C23C16/02 ,  C23C16/26 ,  H01L29/16 ,  H01M10/052 ,  H01M4/131 ,  H01M4/62 ,  H01L29/66 ,  H01L29/778 ,  B82Y40/00

CPC classification number: B08B7/04 ,  B08B7/00 ,  B08B7/0071 ,  B82Y40/00 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/20 ,  H01L29/1606 ,  H01L29/66431 ,  H01L29/7781 ,  H01M4/131 ,  H01M4/625 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54

Abstract: A method for cleaning a hot-wall type film formation apparatus having a batch processing system with industrially high mass productivity is provided. In the method, a carbon film deposited on an inner wall or the like of a reaction chamber of the apparatus is removed efficiently in a short time. To remove the carbon film deposited on the inner wall of the reaction chamber by a thermal CVD method, the reaction chamber is heated at a temperature higher than or equal to 700° C. and lower than or equal to 800° C., and oxygen is introduced into the reaction chamber.

Abstract translation: 提供一种清洗具有工业上高质量生产率的批处理系统的热壁型成膜装置的方法。 在该方法中，在短时间内有效地除去沉积在装置的反应室的内壁等上的碳膜。 为了通过热CVD法除去沉积在反应室内壁上的碳膜，将反应室在高于或等于700℃且低于或等于800℃的温度下加热，并将氧气 被引入到反应室中。