公开(公告)号：US20190273181A1

公开(公告)日：2019-09-05

申请号：US16409603

申请日：2019-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mi Hee LEE ,  Chang Yeon KIM ,  Ju Yong PARK ,  Jong Kyun YOU ,  Joon Hee LEE

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/32 ,  H01L33/10

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

公开(公告)号：US20140209941A1

公开(公告)日：2014-07-31

申请号：US14229773

申请日：2014-03-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheul SHIN ,  Hwa Mok KIM

IPC: H01L25/075

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US20160343922A1

公开(公告)日：2016-11-24

申请号：US15226412

申请日：2016-08-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Hwa Mok KIM ,  Jang Woo LEE ,  Yeo Jin YOON ,  Jong Kyu KIM

IPC: H01L33/60 ,  H01L33/32 ,  H01L33/00 ,  H01L27/15 ,  H01L33/22 ,  H01L33/06 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US20140353582A1

公开(公告)日：2014-12-04

申请号：US14464179

申请日：2014-08-20

Applicant: Seoul Viosys Co., Ltd. ,  Mitsubishi Chemical Corporation

Inventor： Chang Yeon KIM ,  Dae Sung CHO ,  Ki Bum NAM ,  Young Wug KIM ,  Jong Kyun YOU ,  Kenji SHIMOYAMA ,  Takahide JOICHI ,  Kaori KURIHARA

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/387 ,  H01L33/44

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。

公开(公告)号：US20170279008A1

公开(公告)日：2017-09-28

申请号：US15503963

申请日：2015-08-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Kyun YOU ,  Da Hye KIM ,  Chang Ik KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.

公开(公告)号：US20170365743A1

公开(公告)日：2017-12-21

申请号：US15623375

申请日：2017-06-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Kyun YOU ,  Byoung Kyu PARK ,  Chang Yeon KIM ,  Chae Hon KIM

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/48 ,  H01L33/08 ,  H01L33/44 ,  H01L33/22 ,  H01L33/62 ,  H01L33/50

CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/22 ,  H01L33/387 ,  H01L33/44 ,  H01L33/486 ,  H01L33/501 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014

Abstract: A light emitting diode including a semiconductor stack including a lower semiconductor layer, an active layer, and an upper semiconductor layer; an upper electrode connected to the upper semiconductor layer and including an electrode pad and extensions extending from the electrode pad; and a lower electrode connected to the lower semiconductor layer. The electrode pad includes a first electrode pad having an elongated shape, disposed along a first side of the upper semiconductor layer, and covering the upper semiconductor layer near the first side of the upper semiconductor layer, and the extensions include an edge extension extending along an edge of the upper semiconductor layer in the electrode pad and surrounding a luminous region and middle extensions extending from the edge extension or the electrode pad and dividing the luminous region into a plurality of luminous regions.

公开(公告)号：US20150060923A1

公开(公告)日：2015-03-05

申请号：US14474982

申请日：2014-09-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ju Yong PARK ,  Jong Kyun YOU ,  Chang Yeon KIM

IPC: H01L33/18 ,  H01L33/60

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.

Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括：氮化镓系化合物半导体层; 包括Mg的第一金属层，并且以与氮化镓基化合物半导体层欧姆接触的岛的形式设置; 包含Ni的第二金属层，覆盖所述第一金属层，并且使所述氮化镓基化合物半导体层与所述第一金属层的岛之间接触; 以及覆盖第二金属层的反射金属层。