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    LIGHT EMITTING DIODE
    3.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20160372630A1

    公开(公告)日：2016-12-22

    申请号：US15184924

    申请日：2016-06-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Seon Min Bae ,  Chae Hon Kim

    IPC: H01L33/02 ,  H01L33/40 ,  H01L33/38 ,  H01L33/24 ,  H01L33/18 ,  H01L33/08 ,  H01L33/62 ,  H01L33/44 ,  H01L33/32 ,  H01L33/42 ,  H01L33/16

    CPC classification number: H01L33/025 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

    Abstract: A light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first contact electrode forming ohmic contact with the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; and an insulation layer disposed on the light emitting structure and insulating the first contact electrode from the second contact electrode, wherein the first conductive type semiconductor layer includes a nitride-based substrate, the nitride-based substrate having a thread dislocation density of 104 cm−2 or less, an oxygen impurity concentration of 1019 cm−3 or less, and an optical extinction coefficient of less than 5 cm−1 at a wavelength of 465 nm to 700 nm.

    Abstract translation: 发光二极管包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层和介于第一导电类型半导体层和第二导电类型半导体层之间的有源层; 与所述第一导电型半导体层形成欧姆接触的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 以及绝缘层，其设置在所述发光结构上并使所述第一接触电极与所述第二接触电极绝缘，其中所述第一导电类型半导体层包括氮化物基衬底，所述氮化物基衬底的线位错密度为104cm- 2以下，氧离子浓度为1019cm -3以下，光波消失系数小于5cm -1，波长为465nm〜700nm。

    LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME
    4.
    发明申请
    LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME 有权
    具有发光二极管和LED模块

    公开(公告)号：US20150084084A1

    公开(公告)日：2015-03-26

    申请号：US14495771

    申请日：2014-09-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

    IPC: H01L33/10 ,  H01L33/14 ,  H01L33/36

    CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

    Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

    Abstract translation: 公开了一种LED和LED模块。 LED包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上并包括有源层和第二导电类型半导体层的台面; 与第一导电类型半导体层接触的第一欧姆接触结构; 与第二导电类型半导体层接触的第二欧姆接触结构; 至少部分地覆盖台面和第一导电类型半导体层的下绝缘层，并设置成形成至少部分地暴露第一欧姆接触结构的第一开口部分和至少部分地暴露第二欧姆接触结构的第二开口部分 ; 以及电流分布层，其连接到所述第一欧姆接触结构，所述电流分布层至少部分地被所述第一开口部暴露并且被布置成形成至少部分地暴露所述第二开口部的第三开口部。

    High-power light-emitting diode and light-emitting module having the same
    9.
    发明授权
    High-power light-emitting diode and light-emitting module having the same 有权

    公开(公告)号：US10559720B2

    公开(公告)日：2020-02-11

    申请号：US16100783

    申请日：2018-08-10

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Seon Min Bae ,  Jae Hee Lim ,  Chang Yeon Kim ,  Chae Hon Kim

    IPC: H01L33/38 ,  H01L33/32 ,  H01L33/64 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/20

    Abstract: An LED includes a gallium nitride substrate, a first semiconductor layer disposed thereon, and a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer. A first contact layer includes an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part. A second contact layer is disposed on the mesa in contact with the second semiconductor layer. An upper insulation layer has first and second opening parts overlapping the first and second contact layers. First and second electrode pads are electrically connected to the first and second contact layers through the first and second opening parts. The LED can be driven at 150-315 A/cm2 and has a maximum junction temperature of 150-190° C.

    Light-emitting device with improved light extraction efficiency
    10.
    发明授权
    Light-emitting device with improved light extraction efficiency 有权

    公开(公告)号：US10326050B2

    公开(公告)日：2019-06-18

    申请号：US15551575

    申请日：2016-01-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Kyun You ,  Da Hye Kim ,  Chae Hon Kim ,  Seon Min Bae ,  Jae Hee Lim

    IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/16 ,  H01L33/42 ,  H01L33/00 ,  H01L33/20

    Abstract: Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

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