公开(公告)号：US20170236855A1

公开(公告)日：2017-08-17

申请号：US15501500

申请日：2015-07-30

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Tadayoshi MIYAMOTO

IPC: H01L27/146 ,  H04N5/32 ,  G01T1/20

CPC classification number: H01L27/14603 ,  G01T1/2018 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/78693 ,  H04N5/32 ,  H04N5/369

Abstract: An imaging panel (10) includes a photodiode (15), and a metal layer (43) provided below the photodiode and being in contact with a TFT (14) via a contact hole (CH1). A method of producing the imaging panel (10) includes forming a metal film (43p) covering to protect a first insulating film (42), subsequently forming semiconductor films to configure an n-type amorphous silicon layer (151), an intrinsic amorphous silicon layer (152), and a p-type amorphous silicon layer (153), and further forming the photodiode (15) by patterning the semiconductor films through dry etching.

公开(公告)号：US20170160403A1

公开(公告)日：2017-06-08

申请号：US15320682

申请日：2015-06-25

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Shigeyasu MORI

IPC: G01T1/20 ,  H04N5/374 ,  H01L31/10 ,  H04N5/32 ,  A61B6/00 ,  H01L27/144

CPC classification number: G01T1/20 ,  A61B6/00 ,  A61B6/4233 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14663 ,  H01L31/10 ,  H04N5/32 ,  H04N5/374

Abstract: An aim of the present invention is to provide a technology to inhibit degradation phenomena of TFTs in an imaging panel having such TFTs in each pixel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned approximately parallel to the data line so as to overlap the top of the thin film transistor.

公开(公告)号：US20170131413A1

公开(公告)日：2017-05-11

申请号：US15321129

申请日：2015-06-25

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Shigeyasu MORI

IPC: G01T1/20 ,  G01N23/04 ,  H04N5/32 ,  H01L29/786 ,  H01L29/04 ,  G01T1/24 ,  H01L27/146

CPC classification number: G01T1/20 ,  A61B6/4208 ,  G01N23/04 ,  G01T1/247 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14663 ,  H01L29/04 ,  H01L29/7869 ,  H01L31/10 ,  H04N5/32

Abstract: Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines 11 and a plurality of data lines 12. The imaging panel includes, in each of the pixels 13, a conversion element 15 that converts scintillation light to electric charge, and a thin film transistor 14 connected to the gate line 11, data line 12, and conversion element 15. A drain electrode 144 of the thin film transistor 14 is formed such that edges 144E1 and 144E2 of the drain electrode 144 near the data line 12 are more inside the pixel 13 than edges 15E1 and 15E2 of the conversion element 15 near the data line 12.

公开(公告)号：US20160233309A1

公开(公告)日：2016-08-11

申请号：US15021776

申请日：2014-08-12

Applicant: Sharp Kabushiki Kaisha

Inventor： Tadayoshi MIYAMOTO ,  Kazuhide TOMIYASU

IPC: H01L29/45 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78651 ,  H01L29/7869

Abstract: This semiconductor device includes a substrate and a thin film transistor supported on the substrate. The thin film transistor includes a gate electrode, a semiconductor layer, a gate-insulating layer provided between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode respectively making contact with the semiconductor layer. The source electrode and the drain electrode respectively include a main layer containing aluminum or copper, a lower layer having a first layer containing refractory metal and positioned at a substrate side of the main layer, and an upper layer having a second layer containing refractory metal. The upper layer is provided so as to cover an upper surface of the main layer and at least the section of the side face of the main layer that overlaps the semiconductor layer.

Abstract translation: 该半导体器件包括衬底和支撑在衬底上的薄膜晶体管。 薄膜晶体管包括栅电极，半导体层，设置在栅电极和半导体层之间的栅极绝缘层，以及分别与半导体层接触的源电极和漏电极。 源电极和漏极分别包括含有铝或铜的主层，具有含有难熔金属的第一层并位于主层的衬底侧的下层和具有含有难熔金属的第二层的上层。 上层设置成覆盖主层的上表面和至少覆盖半导体层的主层的侧面的部分。

公开(公告)号：US20210111218A1

公开(公告)日：2021-04-15

申请号：US16498499

申请日：2018-03-28

Applicant: Sharp Kabushiki Kaisha

Inventor： Yu NAKAMURA ,  Kazuhide TOMIYASU ,  Makoto NAKAZAWA ,  Hiroyuki MORIWAKI ,  Wataru NAKAMURA ,  Fumiki NAKANO

IPC: H01L27/146 ,  G01T1/20

Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.

公开(公告)号：US20170236856A1

公开(公告)日：2017-08-17

申请号：US15501506

申请日：2015-07-30

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Tadayoshi MIYAMOTO

IPC: H01L27/146 ,  H04N5/32 ,  G01T1/20

CPC classification number: H01L27/14603 ,  G01T1/2018 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/78693 ,  H04N5/32

Abstract: It is an object of the invention to secure a large area of a photodiode and suppress operation property variation and malfunction in an imaging panel and an X-ray imaging device. An imaging panel (10) includes a substrate (40), a TFT (14), an interlayer insulating film (44), a metal layer (45), and a photodiode (15). A data line (12) and the photodiode (15) face each other in a thickness direction of the substrate. The interlayer insulating film (44), which is disposed between the TFT (14) and the photodiode (15), is an SOG film or a photosensitive resin film.

公开(公告)号：US20170139056A1

公开(公告)日：2017-05-18

申请号：US15321127

申请日：2015-06-22

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Shigeyasu MORI

IPC: G01T1/20 ,  H04N5/361 ,  H04N5/378 ,  H01L27/146 ,  H04N5/32

CPC classification number: G01T1/20 ,  G01T1/247 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14663 ,  H04N5/32 ,  H04N5/361 ,  H04N5/378

Abstract: A second insulating film is disposed so as to cover a conversion element that includes a first insulating film, photodiode, and electrode. The second insulating film is made of a SiNxOy material, where x is greater than 0 and y is greater than or equal to 0. This makes it possible to provide a TFT and photodiode with excellent anti-moisture characteristics.

公开(公告)号：US20170148843A1

公开(公告)日：2017-05-25

申请号：US15320712

申请日：2015-06-25

Applicant: Sharp Kabushiki Kaisha

Inventor： Shigeyasu MORI ,  Kazuhide TOMIYASU

IPC: H01L27/146 ,  G01T1/20 ,  H04N5/32 ,  G01N23/04

CPC classification number: H01L27/14663 ,  A61B6/4233 ,  G01N23/04 ,  G01T1/20 ,  H01L27/14614 ,  H01L27/14632 ,  H04N5/32

Abstract: An aim of the present invention is to improve the conversion efficiency of scintillation light into electric charge by a photoelectric conversion element in an imaging panel of an X-ray imaging system using an indirection conversion scheme. An imaging panel generates images based on scintillation light acquired from X-rays that have passed through a specimen. The imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and reflective layer. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and converts incident scintillation light into electric charge. The entirety of a region of a light-receiving surface of the photoelectric conversion element where the scintillation light is incident overlaps the reflective layer as seen from the incident direction of the scintillation light. The reflective layer may be the drain electrode. Alternatively, the reflective layer may be a reflective electrode that is formed in the same layer as a gate electrode.

公开(公告)号：US20170139057A1

公开(公告)日：2017-05-18

申请号：US15322207

申请日：2015-06-25

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Shigeyasu MORI ,  Kazuhide TOMIYASU

IPC: G01T1/20 ,  H01L29/24 ,  H01L29/786 ,  G01N23/04 ,  H01L27/146

CPC classification number: G01T1/2018 ,  G01N23/04 ,  G01N2223/505 ,  G01T1/20 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14663 ,  H01L29/24 ,  H01L29/7869 ,  H04N5/32

Abstract: An X-ray image pickup system (10) includes an X-ray source (16), an image pickup panel (12), a scintillator (13), and an X-ray control unit (14E). The image pickup panel includes a photoelectric conversion element (26), a capacitor (50), a thin film transistor (24), and TFT control units (14A, 14B, 14F). To the photoelectric conversion element (26), scintillation light is projected. The capacitor (50) is connected to the photoelectric conversion element (26), and accumulates charges. The thin film transistor (24) is connected to the capacitor (50). The TFT control units (14A, 14B, 14F) control an operation of the thin film transistor (24). The thin film transistor (24) includes a semiconductor active layer (32) made of an oxide semiconductor. The X-ray control unit (14E) intermittently projects X-ray to the X-ray source (16). The TFT control units (14A, 14B, 14F) cause the thin film transistor (24) to operate when the X-ray is not projected, so as to read out the charges accumulated in the capacitor (50).

公开(公告)号：US20170092673A1

公开(公告)日：2017-03-30

申请号：US15126821

申请日：2015-03-19

Applicant: Sharp Kabushiki Kaisha

Inventor： Tadayoshi MIYAMOTO ,  Kazuhide TOMIYASU ,  Atsushi TOMYO ,  Kazuatsu ITO ,  Shigeyasu MORI

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  G01J1/02 ,  H01L27/1225 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/14658 ,  H01L27/14663 ,  H01L27/14692 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.