公开(公告)号：US10971358B2

公开(公告)日：2021-04-06

申请号：US16296702

申请日：2019-03-08

申请人： Shin-Etsu Polymer Co., Ltd. ,  Shin-Etsu Chemical Co., Ltd. ,  National University Corporation Saitama University

发明人： Junichi Ikeno ,  Yohei Yamada ,  Hideki Suzuki ,  Hitoshi Noguchi

IPC分类号： C30B33/02 ,  H01L21/02 ,  C30B29/16 ,  H01L23/544 ,  B23K26/00 ,  B23K26/08 ,  B23K26/53 ,  B23K103/08 ,  B23K101/18 ,  B23K101/40

摘要： A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate 20 relative to each other in a two-dimensional manner.

公开(公告)号：US11180865B2

公开(公告)日：2021-11-23

申请号：US15887207

申请日：2018-02-02

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

发明人： Hitoshi Noguchi ,  Toshiharu Makino ,  Masahiko Ogura ,  Hiromitsu Kato ,  Hiroyuki Kawashima ,  Satoshi Yamasaki ,  Norio Tokuda

IPC分类号： C30B25/20 ,  C30B29/04 ,  H01L21/00 ,  C30B25/18 ,  C23C16/02 ,  C30B25/10 ,  C23C16/27 ,  H01L21/02

摘要： It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

公开(公告)号：US12040362B2

公开(公告)日：2024-07-16

申请号：US16696039

申请日：2019-11-26

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hitoshi Noguchi

IPC分类号： H01L29/16 ,  C30B23/02 ,  C30B25/18 ,  C30B29/04 ,  C30B29/68 ,  H01L21/02 ,  H01L29/04 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/16

CPC分类号： H01L29/1602 ,  C30B23/025 ,  C30B25/18 ,  C30B29/04 ,  C30B29/68 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02609 ,  H01L29/045 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/16

摘要： A laminate substrate which includes a single crystal diamond (111) layer, including: an underlying substrate, an intermediate layer on the underlying substrate, and the single crystal diamond (111) layer on the intermediate layer, in which the underlying substrate has a main surface which has an off angle within a range, −8.0° or more and −0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111), and the single crystal diamond (111) layer has an off angle within a range, more than −10.5° and less than −2.0°, or more than +2.0° and less than +10.5° in the crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to the crystal plane orientation of (111).

公开(公告)号：US11753740B2

公开(公告)日：2023-09-12

申请号：US17099229

申请日：2020-11-16

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

发明人： Hitoshi Noguchi ,  Norio Tokuda ,  Tsubasa Matsumoto

IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/27 ,  C30B25/18 ,  H01F1/40 ,  C30B25/20 ,  H01F10/10 ,  C01B32/25

CPC分类号： C30B29/04 ,  C23C16/0281 ,  C23C16/277 ,  C23C16/279 ,  C30B25/18 ,  C30B25/183 ,  C30B25/20 ,  H01F1/40 ,  C01B32/25 ,  H01F10/10 ,  Y10T428/30

摘要： A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10−5 volume % or more and 5.0×10−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

公开(公告)号：US10100435B2

公开(公告)日：2018-10-16

申请号：US15445196

申请日：2017-02-28

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

发明人： Hitoshi Noguchi ,  Shozo Shirai ,  Toshiharu Makino ,  Masahiko Ogura ,  Hiromitsu Kato ,  Hiroyuki Kawashima ,  Daisuke Kuwabara ,  Satoshi Yamasaki ,  Daisuke Takeuchi ,  Norio Tokuda ,  Takao Inokuma ,  Tsubasa Matsumoto

IPC分类号： C30B25/04 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  H01L29/16 ,  H01L21/02

摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

公开(公告)号：US11066757B2

公开(公告)日：2021-07-20

申请号：US16179363

申请日：2018-11-02

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  National Institute of Advanced Industrial Science and Technology ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

发明人： Hitoshi Noguchi ,  Shozo Shirai ,  Toshiharu Makino ,  Masahiko Ogura ,  Hiromitsu Kato ,  Hiroyuki Kawashima ,  Daisuke Kuwabara ,  Satoshi Yamasaki ,  Daisuke Takeuchi ,  Norio Tokuda ,  Takao Inokuma ,  Tsubasa Matsumoto

IPC分类号： C30B29/04 ,  C30B25/04 ,  H01L21/02 ,  C30B25/18 ,  C30B25/20 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/308

摘要： A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

公开(公告)号：US10066317B2

公开(公告)日：2018-09-04

申请号：US14488629

申请日：2014-09-17

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hitoshi Noguchi ,  Daisuke Takeuchi ,  Satoshi Yamasaki ,  Masahiko Ogura ,  Hiromitsu Kato ,  Toshiharu Makino ,  Hideyo Okushi

IPC分类号： C30B25/16 ,  C30B25/18 ,  C30B29/04 ,  C30B25/10 ,  C30B25/12

摘要： A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

公开(公告)号：US10727129B2

公开(公告)日：2020-07-28

申请号：US15957256

申请日：2018-04-19

申请人： Shin-Etsu Polymer Co., Ltd. ,  National University Corporation Saitama University ,  Shin-Etsu Chemical Co., Ltd.

发明人： Junichi Ikeno ,  Yohei Yamada ,  Hideki Suzuki ,  Hitoshi Noguchi

IPC分类号： C30B33/02 ,  H01L21/78 ,  H01L21/02 ,  B23K26/00 ,  C30B29/16 ,  B32B43/00 ,  C30B33/06

摘要： A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.

公开(公告)号：US10253426B2

公开(公告)日：2019-04-09

申请号：US15445134

申请日：2017-02-28

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  National Institute of Advanced Industrial Science and Technology ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

发明人： Hitoshi Noguchi ,  Shozo Shirai ,  Toshiharu Makino ,  Masahiko Ogura ,  Hiromitsu Kato ,  Hiroyuki Kawashima ,  Daisuke Kuwabara ,  Satoshi Yamasaki ,  Daisuke Takeuchi ,  Norio Tokuda ,  Takao Inokuma ,  Tsubasa Matsumoto

IPC分类号： C23C16/27 ,  C30B25/04 ,  H01L21/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/308

摘要： A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

公开(公告)号：US09200379B2

公开(公告)日：2015-12-01

申请号：US13888187

申请日：2013-05-06

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hitoshi Noguchi

IPC分类号： C30B25/18 ,  C30B25/06 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/36 ,  C30B33/08

CPC分类号： C30B25/183 ,  C30B25/06 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/36 ,  C30B33/08

摘要： A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

摘要翻译： 用于生长包括至少单晶SiC衬底的单晶金刚石的基材，以及在要生长单晶金刚石的单晶SiC衬底的一侧异质外延生长的铱膜或铑膜。 结果，提供了用于生长单晶金刚石的基材和用于制造单晶金刚石基底的方法，该单晶金刚石基底可以生长具有大面积和良好结晶度的单晶金刚石，并且生产高质量的单晶金刚石基底 低成本。