Abstract:
A semiconductor system may include a first semiconductor device configured to output a command and receive data. The semiconductor system may include a second semiconductor device configured to generate a period signal, the period signals periodically toggled in response to the command, output the data in response to the period signal, and discharge the charges of an internal node if the period signal is not toggled during a predetermined section.
Abstract:
A semiconductor system may include a first semiconductor device configured to output a command and receive data. The semiconductor system may include a second semiconductor device configured to generate a period signal, the period signals periodically toggled in response to the command, output the data in response to the period signal, and discharge the charges of an internal node if the period signal is not toggled during a predetermined section.
Abstract:
An interposer for inspecting reliability of a semiconductor chip is disclosed. The interposer for inspection includes: at least one active pad disposed in an active region of a first surface, and including: pads through which data and a control signal for testing an inspection target chip are received (input) and sent (output) during an active mode; and pads for receiving a power-supply voltage needed to operate the inspection target chip and the interposer during the active mode; at least one passive pad disposed in a passive region of the first surface, and including: pads receiving data for testing the inspection target chip during a passive mode, and a power-supply voltage needed to operate the inspection target chip and the interposer during the passive mode; and at least one bump pad disposed over a second surface facing the first surface, and to be coupled to the inspection target chip.
Abstract:
A semiconductor system may include a controller configured to provide a command clock and a control signal to a semiconductor memory device, and the semiconductor memory device configured to transmit/receive external data and a plurality of data clocks to/from the controller, wherein the plurality of data clocks comprise a first read data strobe signal and a second read data strobe signal, and the semiconductor memory device transmits both of the first read data strobe signal and the second read data strobe signal to the controller or transmits one of the first read data strobe signal and the second read data strobe signal to the controller, based on an operation select signal.
Abstract:
A phase detection circuit includes a sampling signal generation circuit configured to generate a plurality of sampling signals in response to a plurality of phase change clocks having different phases and data; a charging voltage generation circuit configured to compare the plurality of sampling signals, and change a voltage level of one charging voltage between a first charging voltage and a second charging voltage; and a comparison circuit configured to compare voltage levels of the first and second charging voltages, and generate a result signal.
Abstract:
A semiconductor system may include a controller and a semiconductor memory device. The controller may provide an external command, an external address and a first external clock. The controller may be configured to transmit a second external clock and receive a third external clock for receiving/transmitting external data. The semiconductor memory device may be configured to synchronize and receive the external address and the external command with the first external clock. The semiconductor memory device may be configured to synchronize and receive the external data with the second external clock. The semiconductor memory device may be configured to transmit the external data and the third external clock to the controller.
Abstract:
A semiconductor system may include a controller configured to provide a first external clock and a control signal to a semiconductor device, and the semiconductor device configured to transmit/receive external data and a plurality of second external clocks to/from the controller, wherein the plurality of second external clocks comprise a third primary external clock and a third secondary external clock, and the semiconductor device transmits both of the third primary external clock and the third secondary external clock to the controller or to transmits one of the third primary external clock and the third secondary external clock to the controller, based on an operation select signal.
Abstract:
A semiconductor system may include a controller and a semiconductor memory device. The controller may provide an external command, an external address and a first external clock. The controller may be configured to transmit a second external clock and receive a third external clock for receiving/transmitting external data. The semiconductor memory device may be configured to synchronize and receive the external address and the external command with the first external clock. The semiconductor memory device may be configured to synchronize and receive the external data with the second external clock. The semiconductor memory device may be configured to transmit the external data and the third external clock to the controller.
Abstract:
A clock generation circuit may be provided. The clock generation circuit may include a master DLL (Delay Locked Loop) circuit, a code divider and a slave DLL circuit. The master DLL may generate a phase pulse signal having a pulse width corresponding to one cycle of a clock signal, and may generate a delay control code corresponding to the phase pulse signal. The code divider may generate a divided delay control code corresponding to a predetermined time by dividing the delay control code. The slave DLL circuit may generate a delayed strobe signal by delaying a strobe signal according to the divided delay control code.
Abstract:
A semiconductor system may include a first semiconductor device including a first pad group. The semiconductor system may include a second semiconductor device including a second pad group which is configured for input and output of signals from and to a third semiconductor device. The second semiconductor device may include a selective transfer unit configured to electrically couple the third pad group to the first pad group or to an interface unit electrically coupled to the first pad group, in response to a test mode enable signal.