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公开(公告)号：US10297715B2
公开(公告)日：2019-05-21
申请号：US15573824
申请日：2015-07-21
发明人： Michiko Kaneda , Cyril Pernot , Akira Hirano
IPC分类号： H01L33/32 , H01L33/16 , H01L33/00 , H01L33/12 , H01L33/22 , H01L33/06 , H01L33/18 , H01L33/24
摘要： A nitride semiconductor ultraviolet light-emitting element comprises an underlying portion that includes a substrate that is composed of sapphire and has a surface inclined to a (0001) surface so as to form a multi-step terrace, and an AlN layer formed on a surface of the substrate, and a light-emitting portion that is formed on a surface of the underlying portion and includes an active layer having an AlGaN based semiconductor layer. At least the AlN layer of the underlying portion, the active layer of the light-emitting portion, and each layer between the AlN layer and the active layer are formed by step flow growth in which a side surface of a multi-step terrace grows so as to achieve two-dimensional growth. The active layer has a quantum well structure including at least a well layer composed of AlGaN. The average roughness of a 25 μm by 25 μm region on a surface of the active layer is a thickness of the well layer or more and 10 nm or less.
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2.发明授权Template for epitaxial growth, method for producing the same, and nitride semiconductor device 有权用于外延生长的模板，其制造方法和氮化物半导体器件公开(公告)号：US09556535B2
公开(公告)日：2017-01-31
申请号：US14765884
申请日：2014-08-29
发明人： Cyril Pernot , Akira Hirano
IPC分类号： H01L33/00 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , H01L33/32 , C30B29/40 , C30B31/08 , H01L33/06 , H01L33/12 , H01L33/14 , H01S5/02 , H01S5/323
CPC分类号： C30B25/183 , C30B29/38 , C30B29/406 , C30B31/08 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02614 , H01L21/0262 , H01L21/02658 , H01L21/20 , H01L21/205 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/145 , H01L33/32 , H01S5/0213 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×1017 atoms/cm3 or more and 2×1020 atoms/cm3 or less.
摘要翻译： 本发明提供一种外延生长用模板的制造方法，其特征在于，包括：在蓝宝石基板的表面分散Ga原子的表面处理工序; 以及在蓝宝石衬底上外延生长AlN层的AlN生长步骤，其中在AlN层的内部区域中垂直于蓝宝石衬底的表面的深度方向的Ga浓度分布，除了近表面区域 通过二次离子质谱法获得的AlN层的表面的深度为100nm，Ga浓度达到最大值的深度方向的位置存在于位于 蓝宝石衬底和与AlN层侧的界面间隔开的400nm的位置，Ga浓度的最大值为3×10 17原子/ cm 3以上且2×10 20原子/ cm 3以下。
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公开(公告)号：US09502606B2
公开(公告)日：2016-11-22
申请号：US15140300
申请日：2016-04-27
发明人： Cyril Pernot , Akira Hirano
IPC分类号： H01L33/32 , H01L21/20 , H01L33/12 , H01L33/00 , H01L33/16 , H01L33/06 , H01L33/24 , H01L33/18 , H01L21/02 , H01L33/38
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/38
摘要： A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.
摘要翻译： 氮化物半导体紫外线发光元件设置有：底层结构部分，包括蓝宝石（0001）基板和形成在基板上的AlN层; 以及包括n型AlGaN基半导体层的n型包覆层，具有AlGaN基半导体层的有源层和p型AlGaN系半导体的p型包层的发光元件结构部分 层，形成在下面的结构部分上。 衬底的（0001）表面以等于或大于0.6°并且等于或小于3.0°的偏角倾斜，并且n型包覆层的AlN摩尔分数等于或等于 超过50％。
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公开(公告)号：US20170077351A1
公开(公告)日：2017-03-16
申请号：US15113014
申请日：2014-01-21
发明人： Akira Hirano , Cyril Pernot , Tetsuhiko Inazu
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/16 , H01L33/20 , H01L33/36
摘要： A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.
摘要翻译： 氮化物半导体发光元件包括蓝宝石衬底和在蓝宝石衬底上形成有多个氮化物半导体层的发光元件结构部分。 氮化物半导体发光元件是通过蓝宝石衬底将来自发光元件结构部分的光输出到元件的外部的背面发射型氮化物半导体发光元件。 氮化物半导体发光元件被分割为平面观看形状为矩形或矩形的芯片。 蓝宝石衬底的厚度是芯片的平面观看形状的平均长度的0.45至1倍。
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公开(公告)号：US10396244B2
公开(公告)日：2019-08-27
申请号：US15113014
申请日：2014-01-21
发明人： Akira Hirano , Cyril Pernot , Tetsuhiko Inazu
摘要： A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.
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6.发明申请METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPHIRE (0001) SUBSTRATE, AN INITIAL-STAGE AlN LAYER AND LATERALLY OVERGROWN AlxGayN (0001) LAYER 审中-公开用于生产具有SAPPHIRE（0001）基板，初始阶段AlN层和横向覆盖的AlxGayN（0001）层的外延生长的模板的方法公开(公告)号：US20160319459A1
公开(公告)日：2016-11-03
申请号：US15206043
申请日：2016-07-08
发明人： Hiroshi Amano , Satoshi Kamiyama , Myunghee Kim , Cyril Pernot , Akira Hirano
CPC分类号： C30B25/183 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , Y10T428/24529
摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.
摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。
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