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公开(公告)号：US20180166855A1
公开(公告)日：2018-06-14
申请号：US15836601
申请日：2017-12-08
发明人： Tetsuya TAKEUCHI , Isamu AKASAKI , Takanobu AKAGI
CPC分类号： H01S5/18377 , H01L21/02365 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/3063 , H01S5/3201 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
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公开(公告)号：US20180166856A1
公开(公告)日：2018-06-14
申请号：US15836776
申请日：2017-12-08
CPC分类号： H01S5/18377 , H01L33/0045 , H01L33/105 , H01S5/028 , H01S5/18347 , H01S5/18361 , H01S5/187 , H01S5/32341 , H01S5/343 , H01S5/34333 , H01S2304/04
摘要： A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.
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3.发明申请公开(公告)号：US20210111538A1
公开(公告)日：2021-04-15
申请号：US16498385
申请日：2018-03-13
IPC分类号： H01S5/183
摘要： Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
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4.发明申请NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PERIODIC GAIN ACTIVE LAYERS 有权具有周期性增益活性层的氮化物半导体发光器件公开(公告)号：US20160163919A1
公开(公告)日：2016-06-09
申请号：US14955409
申请日：2015-12-01
发明人： Kenjo MATSUI , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI , Takanobu AKAGI , Sho IWAYAMA
CPC分类号： H01L33/06 , H01L33/105 , H01S5/00 , H01S5/0425 , H01S5/1096 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
摘要翻译： 具有周期性增益有源层的氮化物半导体发光器件包括n型半导体层，p型半导体层和谐振器。 该器件还包括设置在n型和p型半导体层之间的多个有源层，以便对应于存在于谐振器中的光的峰值强度位置和设置在有源层之间的至少一层中间层。 配置在p型半导体层侧的有源层的发光强度比设置在n型半导体层侧的有源层的发光强度大。
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公开(公告)号：US20240113174A1
公开(公告)日：2024-04-04
申请号：US18532505
申请日：2023-12-07
CPC分类号： H01L29/2003 , H01L21/02422 , H01L21/0254 , H01L21/02631 , H01L33/32
摘要： A laminate includes an amorphous glass substrate, and an AlN layer formed on the amorphous glass substrate. The AlN layer is c-axis oriented on the amorphous glass substrate, a glass transition temperature (Tg) of the amorphous glass substrate is 720° C. to 810° C., a coefficient of thermal expansion (CTE) of the amorphous glass substrate is 3.5×10−6 [1/K] to 4.0×10−6 [1/K], and a softening point of the amorphous glass substrate is 950° C. to 1050° C.
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公开(公告)号：US20160149078A1
公开(公告)日：2016-05-26
申请号：US14899364
申请日：2014-06-16
申请人： MEIJO UNIVERSITY
发明人： Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI
CPC分类号： H01L33/145 , H01L33/02 , H01L33/06 , H01L33/18 , H01L33/32 , H01S5/3054 , H01S5/3202 , H01S5/3409 , H01S5/34333
摘要： An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.
摘要翻译： 目的在于提高氮化物半导体发光元件的有源层的空穴注入效率。 氮化物半导体发光器件通过层叠各自含有Al并且具有用作生长面的极性或半极性表面的氮化物半导体晶体形成。 该装置包括有源层（103）以及第一和第二组分梯度层（102,104）。 有源层（103）介于第一和第二组合物梯度层（102,104）之间。 第一和第二组成梯度层中的每一个是组成分级的，使得当第一和第二组合物梯度层（102,104）中的每一个靠近一侧时，Al组成值变小， 自发极化和压电极化为负。
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公开(公告)号：US20160020359A1
公开(公告)日：2016-01-21
申请号：US14773045
申请日：2014-03-04
申请人： MEIJO UNIVERSITY
CPC分类号： H01L33/32 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/02549 , H01L21/0262 , H01L33/0075
摘要： Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
摘要翻译： 在较低的温度下制造高质量的氮化物半导体晶体。 通过将基板（105），第III族元素和/或其化合物，氮元素和/或其化合物和Sb元素和/或其化合物供给到基板（105）上来制造氮化物半导体晶体，所有这些都用作 材料，从而蒸发生长至少一层氮化物半导体膜（104）。 在氮化物半导体膜（104）的至少一层的生长工序中，Sb元素与氮元素的供给比例设定为0.004以上。
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公开(公告)号：US20220246789A1
公开(公告)日：2022-08-04
申请号：US17587397
申请日：2022-01-28
发明人： Koji OKUNO , Koichi MIZUTANI , Masaki OYA , Kazuyoshi IIDA , Naoki SONE , Satoshi KAMIYAMA , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI
摘要： A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.
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公开(公告)号：US20190148592A1
公开(公告)日：2019-05-16
申请号：US16184821
申请日：2018-11-08
发明人： Tetsuya TAKEUCHI , Satoshi KAMIYAMA , Motoaki IWAYA , Isamu AKASAKI , Hisanori KOJIMA , Toshiki YASUDA , Kazuyoshi IIDA
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/145 , H01L33/42
摘要： To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.
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公开(公告)号：US20170155016A9
公开(公告)日：2017-06-01
申请号：US14773045
申请日：2014-03-04
申请人： MEIJO UNIVERSITY
CPC分类号： H01L33/32 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/02549 , H01L21/0262 , H01L33/0075
摘要： Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
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