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    Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
    3.
    发明申请
    Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning 有权
    用于制冷和空调的金属表面的等离子体聚合增强

    公开(公告)号：US20050061024A1

    公开(公告)日：2005-03-24

    申请号：US10952904

    申请日：2004-09-30

    申请人： Seok-Keun Koh ,  Hyung Jung ,  Won Choi ,  Byung Kang ,  Ki Kim ,  Sam Ha ,  Cheol Kim ,  Sung-Chang Choi

    发明人： Seok-Keun Koh ,  Hyung Jung ,  Won Choi ,  Byung Kang ,  Ki Kim ,  Sam Ha ,  Cheol Kim ,  Sung-Chang Choi

    IPC分类号： C23C16/44 ,  B05D3/14 ,  B05D5/08 ,  B05D7/24 ,  C08F2/00 ,  C08G83/00 ,  C23C14/12 ,  C23C14/22 ,  C23C16/30 ,  C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/56 ,  F25B47/00 ,  F28F13/18 ,  F25B41/00

    CPC分类号： C23C16/503 ,  B05D1/62 ,  B05D3/148 ,  B05D5/083 ,  C23C16/30 ,  C23C16/50 ,  C23C16/515 ,  C23C16/56 ,  F25B47/003 ,  F28F13/18 ,  F28F2245/02 ,  F28F2245/04

    摘要： According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and there is also provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using an RF plasma.

    摘要翻译： 根据本发明，通过使用DC放电等离子体，提供了一种金属的等离子体聚合表面改性，用于增强其在制冷和空调中的应用，例如构建热交换，其包括以下步骤：（a） 将基本上要被表面改性的金属的阳极电极和阴极电极放置在室中，（b）将室内的压力保持在预定的真空度，（c）吹送由不饱和脂族烃组成的反应气体 单体气体或含氟单体和预定压力的含硅单体气体和以预定压力进入室的非可聚合气体，以及（d）向电极施加电压以获得DC放电，从而 获得由不饱和脂肪烃单体气体和不可聚合气体产生的正离子和负离子和自由基组成的等离子体， 然后通过等离子体沉积在阳极电极的表面上形成具有亲水性或疏水性的聚合物，并且还提供金属的等离子体聚合表面改性以增强其用于制冷和空调的适用性，例如构建热交换 ，通过使用RF等离子体。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08617991B2

    公开(公告)日：2013-12-31

    申请号：US13526960

    申请日：2012-06-19

    申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    IPC分类号： H01L21/44

    CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

    摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

    摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

    Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same
    10.
    发明授权
    Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same 有权
    子字线驱动电路，具有其的半导体存储器件及其控制方法

    公开(公告)号：US08379477B2

    公开(公告)日：2013-02-19

    申请号：US13019858

    申请日：2011-02-02

    申请人： Cheol Kim ,  Sang-Kyun Park ,  Jung-Bae Lee ,  Jun-Phyo Lee

    发明人： Cheol Kim ,  Sang-Kyun Park ,  Jung-Bae Lee ,  Jun-Phyo Lee

    IPC分类号： G11C8/10

    CPC分类号： G11C8/14 ,  G11C8/08

    摘要： Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.

    摘要翻译： 提供了一种半导体存储器件，其包括能够减少由耦合引起的漏电流量的子字线驱动电路。 半导体存储器件包括字线使能信号发生电路和子字线驱动电路。 子字线驱动电路在所选字线的有效模式之后的预充电模式中的脉冲类型时段期间，在所选字线和地之间提供下拉电流路径，生成字线驱动信号 主字线驱动信号的基础，第一子字线控制信号和第二子字线控制信号，并将字线驱动信号提供给存储单元阵列。 半导体存储器件可以减少通过子字线驱动电路流向地的漏电流量。