METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:US20220246803A1

    公开(公告)日:2022-08-04

    申请号:US17720923

    申请日:2022-04-14

    Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

    LIGHT EMITTING DEVICE PACKAGE
    7.
    发明申请

    公开(公告)号:US20190189877A1

    公开(公告)日:2019-06-20

    申请号:US16018542

    申请日:2018-06-26

    Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

    METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权
    制造半导体基板的方法

    公开(公告)号:US20170069785A1

    公开(公告)日:2017-03-09

    申请号:US15183869

    申请日:2016-06-16

    Abstract: A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

    Abstract translation: 制造半导体衬底的方法可以包括在生长衬底上形成第一半导体层,在第一半导体层上形成第二半导体层,在第一半导体层中形成多个空隙,通过去除第一半导体层的部分 在所述第二半导体层中由多个沟槽暴露,在所述第二半导体层上形成第三半导体层并覆盖所述多个沟槽,以及从所述生长衬底分离所述第二和第三半导体层。 在第一半导体层上。 第三半导体层从第二半导体层生长并在第二半导体层上方延伸。

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