公开(公告)号：US20170207130A1

公开(公告)日：2017-07-20

申请号：US15386843

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jung PARK ,  Ju-Hyun KIM ,  Hoyoung KIM ,  Boun YOON ,  TaeYong KWON ,  Sangkyun KIM ,  Sanghyun PARK

IPC: H01L21/8238 ,  H01L21/306 ,  H01L27/092 ,  H01L21/3105

CPC classification number: H01L21/823807 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/092

Abstract: A patterning method for fabricating a semiconductor device includes forming, for example sequentially forming, a lower buffer layer, a first channel semiconductor layer, and a capping insulating layer on a substrate, forming an opening to penetrate the capping insulating layer and the first channel semiconductor layer and expose a portion of the lower buffer layer, forming a second channel semiconductor layer to fill the opening and include a first portion protruding above the capping insulating layer, performing a first CMP process to remove at least a portion of the first portion, removing the capping insulating layer, and performing a second CMP process to remove at least a portion of a second portion of the second channel semiconductor layer protruding above the first channel semiconductor layer.

公开(公告)号：US20230332015A1

公开(公告)日：2023-10-19

申请号：US18096231

申请日：2023-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin Byun ,  Sangkyun KIM ,  Boun YOON ,  Hyosan LEE

IPC: H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76843

Abstract: A slurry composition for polishing metal and a method of manufacturing an integrated circuit device, the slurry composition includes a first organic polishing booster including a cationic polymer salt that includes a quaternary ammonium cation; a second organic polishing booster including an organic acid; an oxidizer; a pH adjuster; 0 wt% to about 0.1 wt% of an inorganic abrasive; and water.

公开(公告)号：US20190157279A1

公开(公告)日：2019-05-23

申请号：US16237913

申请日：2019-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom PYON ,  Kichul PARK ,  Inkwon KIM ,  Ki Hoon JANG ,  Byoungho KWON ,  Sangkyun KIM ,  Boun YOON

IPC: H01L27/112 ,  H01L23/535 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11575 ,  H01L27/11573 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11551 ,  H01L27/11578

CPC classification number: H01L27/11286 ,  H01L21/02107 ,  H01L21/76801 ,  H01L21/76819 ,  H01L23/528 ,  H01L23/535 ,  H01L23/538 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

公开(公告)号：US20250115785A1

公开(公告)日：2025-04-10

申请号：US18771727

申请日：2024-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonki HUR ,  Seokjoo KIM ,  Daehoon YANG ,  Sanghyun PARK ,  Gayoung KIM ,  Sangkyun KIM ,  Inkwon KIM ,  Eunho SONG ,  Jaekwang CHOI

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  C09K15/30 ,  H01L21/321

Abstract: A slurry composition for chemical mechanical metal polishing includes a corrosion inhibitor, abrasive particles, an oxidizing agent, and a solvent. The corrosion inhibitor includes a C2 to C30 aliphatic heterocyclic compound including at least one nitrogen atom in the ring and at least one functional group selected from a halogen, an amine group, a cyclic amine group, a nitro group, an amide group, a carboxyl group, a hydroxy group, a thiol group, an alkoxy group, a C10 to C30 alkyl group, or an ester group; or a C2 to C30 aromatic heterocyclic compound including at least one nitrogen atom in the ring and at least one functional group selected from a halogen, an amine group, a cyclic amine group, a nitro group, an amide group, a carboxyl group, a hydroxy group, a thiol group, an alkoxy group, a C10 to C30 alkyl group, and an ester group; or a combination thereof.

公开(公告)号：US20240189960A1

公开(公告)日：2024-06-13

申请号：US18219222

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yearin BYUN ,  Inkwon KIM ,  Sangkyun KIM

IPC: B24B37/24 ,  B24B37/22

CPC classification number: B24B37/24 ,  B24B37/22

Abstract: A membrane coating compound for a chemical mechanical polishing process, a membrane structure for a chemical mechanical polishing process, and a polishing apparatus for a chemical mechanical polishing process in which a wafer is holdable under pressure on the polishing apparatus, the membrane coating compound includes a functional group capable of hydrogen bonding.

公开(公告)号：US20230257630A1

公开(公告)日：2023-08-17

申请号：US18098244

申请日：2023-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooin LEE ,  Jihye KIM ,  Seungho PARK ,  Jaewoo LEE ,  Jaeik LEE ,  Jaehak LEE ,  Bohyeok CHOI ,  Jungeun KANG ,  Boyun KIM ,  Sangkyun KIM ,  Hyukmin KIM

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321 ,  H10B12/00

CPC classification number: C09G1/02 ,  C09K3/1409 ,  H01L21/3212 ,  H01L21/31053 ,  H10B12/05 ,  H10B12/482

Abstract: A slurry composition is used to treat a surface of a target structure including at least one of a first polishing target film and a second polishing target film, which include different materials from each other, by a chemical mechanical polishing (CMP) process. The slurry composition includes: polishing particles; a first inhibitor including a nonionic polymer to selectively bond to the first polishing target film; and a second inhibitor including an anionic polymer to selectively bond to the second polishing target film. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a target structure including at least one of a first polishing target film and a second polishing target film; applying the slurry composition onto the target structure; and treating a surface of the target structure by a CMP process while the slurry composition covers the target structure.