公开(公告)号：US20050148167A1

公开(公告)日：2005-07-07

申请号：US11041303

申请日：2005-01-25

申请人： Toshiaki Hongoh ,  Satohiko Hoshino

发明人： Toshiaki Hongoh ,  Satohiko Hoshino

IPC分类号： B05D7/24 ,  H01J37/32 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0234 ,  B05D1/62 ,  H01J37/32192 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/76826

摘要： In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

摘要翻译： 在形成绝缘膜的方法中，通过具有多个狭缝的平面天线构件，通过微波照射产生的能量等离子体照射含有有机可固化材料并且设置在电子器件用基板上的膜，从而使 含有有机可固化材料的膜，并形成介电常数为3以下的绝缘膜。

公开(公告)号：US08242019B2

公开(公告)日：2012-08-14

申请号：US12414917

申请日：2009-03-31

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, Jr.

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, Jr.

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/76849 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76883

摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.

摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。 在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团 具有疏水官能团。 该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

公开(公告)号：US20120071003A1

公开(公告)日：2012-03-22

申请号：US13233150

申请日：2011-09-15

申请人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

发明人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

IPC分类号： H01L21/31 ,  C23C14/16 ,  C23F1/08 ,  C23C14/34 ,  C23C16/455 ,  C23C16/48

CPC分类号： H01L21/306 ,  C23C14/02 ,  C23C14/165 ,  C23C14/568 ,  H01M4/0421 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/0525

摘要： Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

摘要翻译： 公开了一种技术，其中喷嘴部分安装在真空室中，并且硅衬底被保持以面对喷嘴部分的排放孔。 例如，从喷嘴部供给ClF 3气体和Ar气体，在真空气氛下从喷嘴部排出混合气体。 通过这样做，混合气体绝热膨胀，Ar原子或ClF3分子结合成为气体簇。 将气体簇照射到硅衬底的表面而不被电离，结果，硅表面变成多孔状态。 然后，通过溅射在单独的真空室41中在硅衬底的表面上生长锂，而不破坏真空。

公开(公告)号：US20070148985A1

公开(公告)日：2007-06-28

申请号：US11648561

申请日：2007-01-03

申请人： Nobutaka Mizutani ,  Fitrianto . ,  Isao Tsukagoshi ,  Keizo Hirose ,  Satohiko Hoshino

发明人： Nobutaka Mizutani ,  Fitrianto . ,  Isao Tsukagoshi ,  Keizo Hirose ,  Satohiko Hoshino

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/311

CPC分类号： H01L21/76808 ,  H01L21/67178

摘要： A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

公开(公告)号：US06890848B2

公开(公告)日：2005-05-10

申请号：US10069274

申请日：2001-06-28

申请人： Kaoru Maekawa ,  Satohiko Hoshino ,  Masahito Sugiura ,  Federica Allegretti

发明人： Kaoru Maekawa ,  Satohiko Hoshino ,  Masahito Sugiura ,  Federica Allegretti

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02299 ,  H01L21/02318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

摘要： A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过旋涂工艺在衬底上形成第一绝缘膜，在380-500℃的温度下对第一绝缘膜施加固化过程，持续时间为5 -180秒，并且通过旋涂工艺在第一绝缘膜上形成第二绝缘膜。

公开(公告)号：US08372739B2

公开(公告)日：2013-02-12

申请号：US11691167

申请日：2007-03-26

申请人： Tadahiro Ishizaka ,  Satohiko Hoshino ,  Kuzuhiro Hamamoto ,  Shigeru Mizuno ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Satohiko Hoshino ,  Kuzuhiro Hamamoto ,  Shigeru Mizuno ,  Yasushi Mizusawa

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for an integrated circuit and method of forming the interconnect structure. The method includes depositing a metallic layer containing a reactive metal in an interconnect opening formed within a dielectric material containing a dielectric reactant element, thermally reacting at least a portion of the metallic layer with at least a portion of the dielectric material to form a diffusion barrier primarily containing a compound of the reactive metal from the metallic layer and the dielectric reactant element from the dielectric material, and filling the interconnect opening with Cu metal, where the diffusion barrier surrounds the Cu metal within the opening. The reactive metal can be Co, Ru, Mo, W, or Ir, or a combination thereof. The interconnect opening can be a trench, a via, or a dual damascene opening.

摘要翻译： 用于集成电路的互连结构和形成互连结构的方法。 该方法包括在包含介电反应物元件的电介质材料中形成的互连开口中沉积含有活性金属的金属层，使金属层的至少一部分与电介质材料的至少一部分热反应形成扩散阻挡层 主要包含来自金属层的反应性金属的化合物和来自电介质材料的介电反应物元件，并且用Cu金属填充互连开口，其中扩散阻挡层围绕开口内的Cu金属。 反应性金属可以是Co，Ru，Mo，W或Ir，或它们的组合。 互连开口可以是沟槽，通孔或双镶嵌开口。

公开(公告)号：US07569497B2

公开(公告)日：2009-08-04

申请号：US11041303

申请日：2005-01-25

申请人： Toshiaki Hongoh ,  Satohiko Hoshino

发明人： Toshiaki Hongoh ,  Satohiko Hoshino

IPC分类号： H01L21/31

CPC分类号： H01L21/0234 ,  B05D1/62 ,  H01J37/32192 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/76826

摘要： In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

摘要翻译： 在形成绝缘膜的方法中，通过具有多个狭缝的平面天线构件，通过微波照射产生的能量等离子体照射含有有机可固化材料并且设置在电子器件用基板上的膜，从而使 含有有机可固化材料的膜，并形成介电常数为3以下的绝缘膜。

公开(公告)号：US20080237859A1

公开(公告)日：2008-10-02

申请号：US11691167

申请日：2007-03-26

申请人： Tadahiro Ishizaka ,  Satohiko Hoshino ,  Kuzuhiro Hamamoto ,  Shigeru Mizuno ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Satohiko Hoshino ,  Kuzuhiro Hamamoto ,  Shigeru Mizuno ,  Yasushi Mizusawa

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for an integrated circuit and method of forming the interconnect structure. The method includes depositing a metallic layer containing a reactive metal in an interconnect opening formed within a dielectric material containing a dielectric reactant element, thermally reacting at least a portion of the metallic layer with at least a portion of the dielectric material to form a diffusion barrier primarily containing a compound of the reactive metal from the metallic layer and the dielectric reactant element from the dielectric material, and filling the interconnect opening with Cu metal, where the diffusion barrier surrounds the Cu metal within the opening. The reactive metal can be Co, Ru, Mo, W, or Ir, or a combination thereof. The interconnect opening can be a trench, a via, or a dual damascene opening.

摘要翻译： 用于集成电路的互连结构和形成互连结构的方法。 该方法包括在包含介电反应物元件的电介质材料中形成的互连开口中沉积含有活性金属的金属层，使金属层的至少一部分与电介质材料的至少一部分热反应形成扩散阻挡层 主要包含来自金属层的反应性金属的化合物和来自电介质材料的介电反应物元件，并且用Cu金属填充互连开口，其中扩散阻挡层围绕开口内的Cu金属。 反应性金属可以是Co，Ru，Mo，W或Ir，或它们的组合。 互连开口可以是沟槽，通孔或双镶嵌开口。

公开(公告)号：US20060154492A1

公开(公告)日：2006-07-13

申请号：US11322318

申请日：2006-01-03

申请人： Shinji Ide ,  Masaru Sasaki ,  Satohiko Hoshino

发明人： Shinji Ide ,  Masaru Sasaki ,  Satohiko Hoshino

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3124

摘要： It is an object of the present invention to cure an insulating film of a semiconductor device in a short time while keeping a low dielectric constant. In the present invention, a coating film made of porous MSQ is formed on a substrate, the substrate on which the porous MSQ is formed is placed in a vacuum vessel, and high-density plasma processing at a low electron temperature based on microwave excitation is applied to the coating film by using a plasma substrate processing apparatus, thereby causing an intermolecular dehydration-condensation reaction of hydroxyls in a molecule and another molecule included in the porous MSQ to bond the molecules together, so that a cured insulating film is generated while a low dielectric constant is maintained.

摘要翻译： 本发明的目的是在保持低介电常数的同时在短时间内固化半导体器件的绝缘膜。 在本发明中，在基板上形成由多孔MSQ制成的涂膜，将形成有多孔质子MSQ的基板放置在真空容器中，基于微波激发的低电子温度的高密度等离子体处理为 通过使用等离子体基板处理装置施加到涂膜，从而使分子中的羟基和多孔MSQ中包含的另一个分子的分子间脱水缩合反应将分子结合在一起，从而产生固化的绝缘膜，同时 维持低介电常数。

公开(公告)号：US20050153533A1

公开(公告)日：2005-07-14

申请号：US10503131

申请日：2003-02-10

申请人： Satohiko Hoshino ,  Shingo Hishiya

发明人： Satohiko Hoshino ,  Shingo Hishiya

IPC分类号： H01L21/302 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/3124 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/76813

摘要： Ammonium gas is supplied by means of a gas supply apparatus to a reaction tube containing a semiconductor wafer manufactured with etching and ashing cleaning processing in a predetermined semiconductor manufacturing process, further the reaction tube is heated by a heater, and thus the semiconductor water is made to undergo heating processing in the predetermined ammonium atmosphere. Thereby, relative dielectric constant k value of interlayer dielectric in the semiconductor device, once raised and deteriorated due to the above-mentioned etching and ashing cleaning process or such, is raised and restored.

摘要翻译： 通过气体供给装置向含有在规定的半导体制造工序中通过蚀刻和灰化清洗处理制造的半导体晶片的反应管供给铵气，进一步用加热器对反应管进行加热，由此制造半导体水 在预定的铵气氛中进行加热处理。 因此，半导体器件中的层间电介质的相对介电常数k值由于上述蚀刻和灰化清洁处理等而升高并劣化。