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    Semiconductor laser with crystalline window layer
    2.
    发明授权
    Semiconductor laser with crystalline window layer 失效
    具有结晶窗层的半导体激光器

    公开(公告)号：US5677922A

    公开(公告)日：1997-10-14

    申请号：US589462

    申请日：1996-01-22

    申请人： Norio Hayafuji ,  Takashi Motoda

    发明人： Norio Hayafuji ,  Takashi Motoda

    IPC分类号： H01L21/318 ,  H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/4031

    摘要： A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.

    摘要翻译： 根据本发明的半导体激光器包括具有第一晶体取向的表面的化合物半导体衬底; 包括依次设置在半导体衬底的表面上的第一覆层，有源层和第二覆层，并且包括横向于半导体衬底的表面并且具有第二晶体取向的第一和第二窗表面; 设置在窗表面上的掺杂晶体半导体窗口层; 以及分别设置在结晶层和半导体衬底上的电极。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5604764A

    公开(公告)日：1997-02-18

    申请号：US611089

    申请日：1996-03-05

    申请人： Takashi Motoda ,  Manabu Kato

    发明人： Takashi Motoda ,  Manabu Kato

    IPC分类号： H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/164 ,  H01S5/2227 ,  H01S5/2272 ,  Y10S117/913

    摘要： A method of fabricating a semiconductor laser includes forming a mask having a stripe opening in a direction on a {100} surface of a first conductivity type substrate, and growing a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer on the {100} surface using the mask, thereby producing a stripe-shaped ridge in which the active layer and the first conductivity type lower cladding layer are covered with the second conductivity type upper cladding layer. The stripe-shaped ridge has an ordinary mesa-shaped cross-section in a direction perpendicular to the stripe direction and a symmetrical hexagonal cross-section in the stripe direction. In this method, since the conventional selective etching for forming the ridge is dispensed with, the processing precision of the ridge is improved. Further, the second conductivity type cladding layer and the active layer grown on the side surfaces of the first conductivity type cladding layer are very thin and have low dopant incorporating efficiencies, so that portions of the first conductivity type cladding layer grown at the side surfaces of the ridge have high resistivity, and reactive current is blocked by these high-resistance portions.

    摘要翻译： 一种制造半导体激光器的方法包括：在第一导电型衬底的{100}表面上形成具有沿<011>方向的条纹开口的掩模，并且生长包括第一导电类型包覆层的双异质结结构 使用掩模在{100}表面上形成第二导电型包覆层，由此产生条状脊，其中有源层和第一导电类型下覆盖层被第二导电类型上包层覆盖 。 条形脊在垂直于条纹方向的方向上具有普通的台面状横截面，并且在条带方向上具有对称的六边形横截面。 在该方法中，由于省去了用于形成脊的常规选择性蚀刻，所以提高了脊的加工精度。 此外，在第一导电型包覆层的侧面上生长的第二导电型包覆层和有源层非常薄，并且具有低掺杂剂结合效率，使得在第一导电类型包层的侧表面生长的部分 脊具有高电阻率，并且无功电流被这些高电阻部分阻挡。

    Container for liquid metal organic compound
    6.
    发明授权
    Container for liquid metal organic compound 失效
    液态金属有机化合物容器

    公开(公告)号：US5589110A

    公开(公告)日：1996-12-31

    申请号：US533462

    申请日：1995-09-25

    申请人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

    发明人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

    IPC分类号： C30B35/00 ,  C23C16/448 ,  C30B25/14 ,  H01L21/205 ,  H01L21/365 ,  B01F3/04

    CPC分类号： C23C16/45561 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4485 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

    摘要： A metal organic compound container apparatus for containing a liquid metal organic compound, receiving a carrier gas, and producing a carrier gas stream saturated with vapor of the metal organic compound including a container for containing a liquid metal organic compound; an inlet pipe for introducing a carrier gas into the container, the inlet pipe having an end for immersion in the metal organic compound; a carrier gas flow rate controller for controlling carrier gas flow into the inlet pipe; a first exhaust pipe for exhausting carrier gas from the container at a first flow rate, the first exhaust pipe having an end not contacting the metal organic compound; a first gas flow rate controller for controlling one of pressure and the first flow rate of the carrier gas through the first exhaust pipe; a second exhaust pipe for exhausting carrier gas from the container at a second flow rate, the second exhaust pipe having an end not contacting the metal organic compound; and a second gas flow rate controller for controlling the second flow rate.

    摘要翻译： 一种金属有机化合物容器装置，用于容纳液体金属有机化合物，接收载气，并制备包含含有液态金属有机化合物的容器的金属有机化合物饱和的载气流; 用于将载气引入容器的入口管，所述入口管具有用于浸入所述金属有机化合物的端部; 用于控制载气流入入口管的载气流量控制器; 第一排气管，其以第一流量从所述容器排出载气，所述第一排气管的端部不接触所述金属有机化合物; 第一气体流量控制器，用于控制通过第一排气管的载气的压力和第一流量之一; 第二排气管，用于以第二流量从所述容器排出载气，所述第二排气管具有不接触所述金属有机化合物的端部; 以及用于控制第二流量的第二气体流量控制器。

    Material supplying apparatus
    7.
    发明授权
    Material supplying apparatus 失效
    供料装置

    公开(公告)号：US5582647A

    公开(公告)日：1996-12-10

    申请号：US358465

    申请日：1994-12-19

    申请人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

    发明人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

    IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  A01K15/04

    CPC分类号： C23C16/4482 ,  C23C16/52

    摘要： A material supplying apparatus includes a container for storing a solution; an inlet pipe for introducing a carrier gas and an outlet pipe; electrodes disposed in the container over the depth direction of the container and forming a capacitor; and apparatus for calculating a residual amount of the solution in the container from the capacitance of the capacitor formed by the electrodes. The solution is used as the dielectric of the capacitor formed in the container and the capacitance varies according to the quantity of solution so that the residual amount of the solution and the time to replenish the solution are calculated in a simple structure having no moving parts.

    摘要翻译： 材料供给装置包括用于储存溶液的容器; 用于引入载气和出口管的入口管; 在容器的深度方向上设置在容器中并形成电容器的电极; 以及根据由电极形成的电容器的电容计算容器中的溶液残留量的装置。 该溶液用作形成在容器中的电容器的电介质，并且电容根据溶液量而变化，使得溶液的剩余量和补充溶液的时间以不具有移动部件的简单结构计算。

    Method for fabricating visible light laser diode
    8.
    发明授权
    Method for fabricating visible light laser diode 失效
    制造可见光激光二极管的方法

    公开(公告)号：US5272109A

    公开(公告)日：1993-12-21

    申请号：US861115

    申请日：1992-03-31

    申请人： Takashi Motoda

    发明人： Takashi Motoda

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01L21/20 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/2206 ,  H01S5/32325

    摘要： A method for fabricating a visible light laser diode includes growing a double heterojunction structure of AlGaInP/GaInP/AlGaInP on a GaAs substrate, forming a stripe-shaped ridge in the double heterojunction structure using a dielectric film as an etching mask, selectively growing n type GaAs by MOCVD using the dielectric film as a growth mask to form a GaAs current blocking layer burying the ridge, removing the dielectric film and growing a GaAs contact layer on the current blocking layer and the ridge. The step of selectively growing the GaAs current blocking layer includes growing a first GaAs layer on the double heterojunction structure at both sides of the ridge and on the side walls of the ridge using triethylgallium (TEG) as a Ga source and growing a second GaAs layer on the first GaAs layer using trimethylgallium (TMG) as a Ga source. The side walls of the ridge are covered by the first GaAs layer and are not exposed to a high temperature in an AsH.sub.3 ambient, thereby reducing damage to the double heterojunction structure. In addition, since the second GaAs layer is grown using TMG as the Ga source, cavities are not produced in the GaAs layer.

    摘要翻译： 制造可见光激光二极管的方法包括：在GaAs衬底上生长AlGaInP / GaInP / AlGaInP的双异质结结构，使用电介质膜作为蚀刻掩模，在双异质结结构中形成条状脊，选择性生长n型 通过使用电介质膜作为生长掩模的MOCVD来形成砷化镓，以形成埋入脊的GaAs电流阻挡层，去除电介质膜并在电流阻挡层和脊上生长GaAs接触层。 选择性地生长GaAs电流阻挡层的步骤包括使用三乙基镓（TEG）作为Ga源，在脊的两侧和脊的侧壁上的双异质结结构上生长第一GaAs层，并生长第二GaAs层 在使用三甲基镓（TMG）作为Ga源的第一GaAs层上。 脊的侧壁被第一GaAs层覆盖，并且不暴露于AsH3环境中的高温，从而减少对双异质结结构的损伤。 此外，由于使用TMG作为Ga源生长第二GaAs层，所以在GaAs层中不产生空穴。

    Method and apparatus for supporting development of broker program, and computer product
    9.
    发明申请
    Method and apparatus for supporting development of broker program, and computer product 审中-公开
    支持经纪人计划和电脑产品开发的方法和装置

    公开(公告)号：US20070203936A1

    公开(公告)日：2007-08-30

    申请号：US11434474

    申请日：2006-05-15

    申请人： Yoshitaka Honishi ,  Takashi Motoda ,  Atsushi Kitamura ,  Yasunari Tateiwa

    发明人： Yoshitaka Honishi ,  Takashi Motoda ,  Atsushi Kitamura ,  Yasunari Tateiwa

    IPC分类号： G06F7/00

    CPC分类号： H04L67/28 ,  H04L67/2819 ,  H04L67/327

    摘要： A data-type expressing unit expresses, when a data type of a parameter for an application is out of a range of data type supported by an interface definition language, a predetermined data type of the interface definition language corresponding to the data type of the application in the interface definition language, based on information on the data type of the application. A file generating unit generates an interface-definition-language file in which information required for generating a broker program is expressed in the interface definition language using the data type of the interface definition language expressed by the data-type expressing unit.

    摘要翻译： 当数据类型表达单元在应用的参数的数据类型超出由接口定义语言支持的数据类型的范围之外时，表示与应用的数据类型相对应的接口定义语言的预定数据类型 在接口定义语言中，基于有关应用程序的数据类型的信息。 文件生成单元使用由数据类型表达单元表示的接口定义语言的数据类型，以界面定义语言表示生成代理程序所需的信息的界面定义语言文件。