公开(公告)号：US20080224285A1

公开(公告)日：2008-09-18

申请号：US12074225

申请日：2008-02-28

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US07675148B2

公开(公告)日：2010-03-09

申请号：US12074225

申请日：2008-02-28

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-hyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US08766419B2

公开(公告)日：2014-07-01

申请号：US12643901

申请日：2009-12-21

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-kyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-kyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495 ,  H01L23/433 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US20100155914A1

公开(公告)日：2010-06-24

申请号：US12643901

申请日：2009-12-21

申请人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-kyuk Lee ,  Yun-hwa Choi

发明人： Seung-won Lim ,  O-Seob Jeon ,  Joon-seo Son ,  Keun-kyuk Lee ,  Yun-hwa Choi

IPC分类号： H01L23/495 ,  H01L23/34

CPC分类号： H01L24/96 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2924/00012

摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

摘要翻译： 提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。 电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一 。 该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

公开(公告)号：US20090127681A1

公开(公告)日：2009-05-21

申请号：US12262700

申请日：2008-10-31

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49575 ,  H01L21/565 ,  H01L23/16 ,  H01L23/4334 ,  H01L24/01 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00

摘要： Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a first die-pad on which a semiconductor chip is mounted on a bottom surface of the first die-pad, a support plate disposed adjacent to a lateral surface of the first die-pad, a support prop protruding from the support plate, and supporting the first die-pad, and a package body that encapsulates the first die-pad, the semiconductor chip, and the support plate.

摘要翻译： 提供半导体封装及其制造方法。 半导体封装包括第一裸片焊盘，半导体芯片安装在第一裸片焊盘的底表面上，与第一裸片焊盘的侧表面相邻设置的支撑板，从支撑件突出的支撑支架 并且支撑第一管芯焊盘，以及封装体，其封装第一管芯焊盘，半导体芯片和支撑板。

公开(公告)号：US07687903B2

公开(公告)日：2010-03-30

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/34

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090129028A1

公开(公告)日：2009-05-21

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H05K7/20 ,  H01L23/34 ,  H01L21/00

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090243079A1

公开(公告)日：2009-10-01

申请号：US12381957

申请日：2009-03-17

申请人： Seung-won Lim ,  O-seob Jeon ,  Seung-yong Choi ,  Joon-seo Son ,  Man-kyo Jong

发明人： Seung-won Lim ,  O-seob Jeon ,  Seung-yong Choi ,  Joon-seo Son ,  Man-kyo Jong

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/49575 ,  H01L23/49531 ,  H01L23/5382 ,  H01L24/06 ,  H01L24/28 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/4911 ,  H01L2224/49113 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/01049

摘要： Provided is a semiconductor device package including a substrate formed of a silicon (Si)-based material. The semiconductor device package includes a first substrate which comprises first and second principal planes which are opposite each other, and a substrate body layer disposed between the first and second principal planes, the substrate body layer being formed of a silicon (Si)-based material; and at least one first semiconductor device which is mounted on the first principal plane.

摘要翻译： 提供了一种包括由基于硅（Si）的材料形成的衬底的半导体器件封装。 半导体器件封装包括第一衬底，其包括彼此相对的第一和第二主平面以及设置在第一和第二主平面之间的衬底主体层，衬底主体层由基于硅（Si）的材料形成 ; 以及安装在第一主平面上的至少一个第一半导体器件。

公开(公告)号：US07951645B2

公开(公告)日：2011-05-31

申请号：US12702615

申请日：2010-02-09

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L21/44

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US07701048B2

公开(公告)日：2010-04-20

申请号：US11743829

申请日：2007-05-03

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L23/52

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。