摘要:
A developing solution comprising at least two compounds selected from choline and quaternary ammonium salts is suitable for developing a negative-type photosensitive resin composition with exposure to a smaller light amount.
摘要:
Fine patterns with high degree of resolution and high resistance to etching can be produced by coating a solution of a photosensitive composition comprising (a) an aromatic azide compound and (b) an alkaline-aqueous-solution-soluble polymer on a substrate, exposing predetermined portions of the coated photosensitive composition to ultraviolet light, developing with an alkaline aqueous solution to form a resist pattern, and etching the substrate using said resist pattern as a mask.
摘要:
4'-Azidobenzal-2-methoxyacetophenone is an excellent photosensitive compound and can give a photosensitive composition together with an alkaline-aqueous-solution-soluble polymer which can be insolubilized in an alkaline aqueous solution by photochemical curing with 4'-azidobenzal-2-methoxyacetophenone, and if necessary together with an organic solvent, said composition showing a very small change in viscosity with the lapse of long time.
摘要:
Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].
摘要:
A photosensitive resin composition comprising (a) 20 to 75 parts by weight of a urethane diacrylate or dimethacrylate compound obtained by reacting trimethylhexamethylene diisocyanate and/or isophorone diisocynate dihydric alcohol and an acrylic or methacrylic monoester of a dihydric alcohol, (b) 20 to 75 parts by weight of a linear polymeric compound having a glass transition temperature of about 40.degree. to 150.degree. C., and (c) a sensitizer and/or a sensitizer system which generate free radicals owing to actinic light, is excellent in heat resistance, resistance to thermal shock and solvent resistance, and is suitable for forming a soldering mask. Further, a photosensitive element produced by forming a layer of the above-mentioned composition on a support gives a protective coating film excellent in heat resistance, resistance to thermal shock and solvent resistance, and is particularly suitable for a soldering mask.
摘要:
A photosensitive resin composition comprising (A) an alkaline aqueous solution-soluble novolak resin, (B) a photosensitizer obtained by reacting a polyhydroxy compound with 1,2-naphthoquinone-(2)-diazido-5(or 4)-sulfonyl chloride, and (C) an ultraviolet absorber such as 2-(2'-hydroxy-5'-methylphenyl)-benzotriazole, has a strong absorption against a light of a wavelength of 365 nm and is suitable for producing semiconductor elements, etc.
摘要:
A photosensitive resin composition comprising (A) an alkaline aqueous solution-soluble novolak resin, (B) a photosensitizer obtained by reacting a polyhydroxy compound with 1,2-naphthoquinone-(2)-diazido-5(or 4)-sulfonyl chloride, and (C) an ultraviolet absorber such as 2-(2'-hydroxy-5'-methylphenyl)-benzotriazole, has a strong absorption against a light of a wavelength of 365 nm and is suitable for producing semiconductor elements, etc.
摘要:
There is disclosed an image-formable resinous composition comprising a poly(olefinsulfone) and a matrix polymer, in which the matrix polymer being a novolac phenol resin obtained from:(1) m-cresol and p-cresol as main components, the molar ratio of m-cresol/p-cresol being within the range from 40/60 to 55/45, and(2) formaldehyde, the molar ratio of formaldehyde/(phenol or phenol derivatives) being within the range from 5/10 to 8/10.The image-formable resinous composition has a high sensitivity and a high dissolution.
摘要:
A water-dispersible epoxy modified alkyd resin produced by reacting (A) 0-50 parts by weight of oil or oil fatty acid, (B) 10-50 parts by weight of polyhydric alcohol, (C) 0-25 parts by weight of monobasic acid having 6 to 18 carbon atoms, (D) 15-70 parts by weight of polybasic acid having 4 to 10 carbon atoms or its anhydride, (E) 5-25 parts by weight of polyoxyalkylene glycol having a molecular weight of 600 to 20,000, and (F) an epoxy compound, wherein the ratio of the hydroxyl groups to the carboxyl groups in the components (A) through (E) is 0.625-1.8 and the amount of the component (F) is 3-50 parts by weight per 100 parts by weight of the total weight of the components (A) through (E), can provide water-dispersible coatings having improved drying characteristics and water resistance as well as corrosion resistance.
摘要:
Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.