摘要:
A polishing apparatus for polishing a substrate includes a polishing table holding a polishing pad, a top ring configured to press the substrate against the polishing pad, and first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate. The polishing apparatus also includes spectroscopes each configured to measure at each wavelength an intensity of the reflected light received, and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.
摘要:
A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.
摘要:
A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.
摘要:
An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.
摘要:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
摘要:
A polishing apparatus is disclosed. The apparatus includes a stage (20) configured to hold a substrate W, a stage-rotating mechanism (40) configured to rotate the stage, a polishing head (42) configured to polish a periphery of the substrate held by the stage, a controller (70) configured to control operations of the stage (20), the stage-rotating mechanism (40), and the polishing head (42), an image-capturing device (61) configured to capture an image of the periphery of the substrate through at least one terminal imaging element (60) arranged so as to face the periphery of the substrate, an image processor (62) configured to process the image captured by the image-capturing device, and a liquid ejector (51) configured to eject a light-transmissive liquid toward the periphery of the substrate to fill a space between the periphery of the substrate and the terminal imaging element with the liquid.
摘要:
An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.
摘要:
An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter (5-1), an electromagnetic deflector (11-1), a beam separator (12-1), and a tablet lens (17-1) as an objective lens. The beam separator (12-1) is configured such that a distance by which a secondary electron beam passes through the beam separator is approximately three times longer than a distance by which a primary electron beam passes through the beam separator. Therefore, even if a magnetic field in the beam separator is set to deflect the primary electron beam by a small angle equal to or less than approximately 10 degrees, the secondary electron beam can be deflected by approximately 30 degrees, so that the primary and secondary electron beams are sufficiently separated. Also, since the primary electron beam is deflected by a small angle, less aberration occurs in the primary electron beam. Accordingly, since a light path length of a primary electro-optical system, it is possible to reduce the influence of space charge and the occurrence of deflection aberration.
摘要:
A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.