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    Stacked semiconductor device manufacturing method
    4.
    发明授权
    Stacked semiconductor device manufacturing method 失效
    叠层半导体器件制造方法

    公开(公告)号：US06686222B2

    公开(公告)日：2004-02-03

    申请号：US10147070

    申请日：2002-05-17

    申请人： Shoko Omizo ,  Atsushi Yoshimura ,  Mikio Matsui ,  Takao Sato

    发明人： Shoko Omizo ,  Atsushi Yoshimura ,  Mikio Matsui ,  Takao Sato

    IPC分类号： H01L2150

    CPC分类号： H01L23/49811 ,  H01L23/544 ,  H01L25/105 ,  H01L2223/54473 ,  H01L2224/16 ,  H01L2225/1023 ,  H01L2225/107 ,  H05K3/4614 ,  H05K3/4638

    摘要： In a semiconductor device manufacturing method, a semiconductor element is mounted on a substrate including first connection electrodes, first interconnections electrically connected to the first connection electrodes and a first alignment mark with the semiconductor element electrically connected to the first interconnections. Then, the substrate having the semiconductor element mounted thereon and a core substrate including second connection electrodes and second interconnections electrically connected to the second connection electrode and having adhesive layers formed on both surfaces thereof are positioned with respect to and stacked on each other based on recognition of the first alignment mark, thermo-compression bonding is performed at temperatures at which an adhesive agent of the adhesive layers is melted, without being cured, to temporarily fix the substrate having the semiconductor element mounted thereon on the core substrate by tackiness of the adhesive agent.

    摘要翻译： 在半导体器件制造方法中，半导体元件安装在包括第一连接电极的基板上，与第一连接电极电连接的第一互连和与第一互连电连接的半导体元件的第一对准标记。 然后，在其上安装有半导体元件的基板和包括第二连接电极的芯基板和与第二连接电极电连接并且在其两个表面上形成的粘合剂层的第二互连基于识别而相对于彼此定位 在第一对准标记的温度下，在粘合剂层的粘合剂被熔化而不固化的温度下进行热压接，通过粘合剂的粘性将其上安装有半导体元件的基板临时固定在芯基板上 代理商

    Semiconductor device and method of manufacturing the same
    10.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06261919B1

    公开(公告)日：2001-07-17

    申请号：US09413860

    申请日：1999-10-07

    申请人： Shoko Omizo

    发明人： Shoko Omizo

    IPC分类号： H01L2176

    CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  Y10S438/975 ,  H01L2924/00 ,  H01L2224/05005 ,  H01L2224/05541

    摘要： A mark of a semiconductor device is formed of a molten trace obtained by selectively applying a laser to a ground back surface of a semiconductor substrate. Since the molten trace mark is formed in a form of a planarized surface on a back surface of a wafer or a chip which has been rendered uneven by grinding, visual recognition of the mark can be improved. Furthermore, since the mark is not deeply inscribed into the wafer or the chip, unlike the case of a dot mark, it is possible to maintain a die strength at a high level. In particular, when the molten trace mark is formed by using SHG-YAG laser, it is possible to suppress the depth of the layer from being thermally influenced, up to about several &mgr;m. As a result, it is possible to suppress thermal influence upon the inner circuit formed in a silicon chip and wiring formed therein.

    摘要翻译： 半导体器件的标记由通过选择性地将激光施加到半导体衬底的接地背表面而获得的熔融迹线形成。 由于熔融迹线标记是通过研磨而变得不均匀的晶片或芯片的背面上的平坦化表面的形式形成的，因此可以提高标记的视觉识别。 此外，由于标记没有深深地刻入晶片或芯片，与点标记的情况不同，可以将模具强度保持在高水平。 特别地，当通过使用SHG-YAG激光形成熔融迹线标记时，可以抑制层的深度受热影响，直到约几个微米。 结果，可以抑制对在其中形成的硅芯片和布线中形成的内部电路的热影响。