公开(公告)号：US06800539B2

公开(公告)日：2004-10-05

申请号：US09900043

申请日：2001-07-09

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Shuichiro Sugiyama

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Shuichiro Sugiyama

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  C23C16/24 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M+200≦Pd≦160M+333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.

摘要翻译： 在放电空间中，衬底201和阴极206彼此间隔d（cm）设置，含有一个或多个硅化合物和氢的气体被引入到放电空间中，并且成膜的产物Pd 压力P（Pa）和d，氢气流量M（SLM）设定为满足关系：80M + 200 <= Pd <= 160M + 333，并且施加RF功率以产生等离子体和 在放电空间中的基板201上形成非单晶硅薄膜。 因此，提供了一种薄膜形成方法，使得可以形成非晶硅膜，其中可以获得均匀的薄膜分布成膜速率，从而可以获得促进大面积实现和高转换效率，同时实现增加 在成膜率上。

公开(公告)号：US06531654B2

公开(公告)日：2003-03-11

申请号：US09861520

申请日：2001-05-22

申请人： Shuichiro Sugiyama ,  Masahiro Kanai ,  Takahiro Yajima

发明人： Shuichiro Sugiyama ,  Masahiro Kanai ,  Takahiro Yajima

IPC分类号： H01L3104

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/5096 ,  C30B25/105 ,  C30B29/06 ,  H01L31/20 ,  Y02E10/50 ,  Y02P70/521

摘要： In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous semiconductor thin film on a desired substrate, the high-frequency power is applied changing its power density continuously or stepwise from a high power density to a low power density and thereafter again changing the power density continuously or stepwise from a low power density to a high power density, to form a semiconductor thin film made different in film quality in the direction of layer thickness while retaining the same conductivity type. This process enable formation of high-quality semiconductor thin films by plasma CVD.

摘要翻译： 在半导体薄膜形成工艺中，包括将半导体薄膜材料气体进料到放电空间中，并向其施加高频电力以使等离子体发生并分解，从而在材料气体上形成非晶半导体薄膜 应用高频功率将其功率密度从高功率密度连续地或逐步地改变到低功率密度，然后再次将功率密度从低功率密度连续地或逐步地改变到高功率密度，以形成 在保持相同的导电类型的同时，在层厚度方向上制成膜质量不同的半导体薄膜。 该过程能够通过等离子体CVD形成高质量的半导体薄膜。

公开(公告)号：US06846521B2

公开(公告)日：2005-01-25

申请号：US10650763

申请日：2003-08-29

申请人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

发明人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： C23C16/503 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  H01J37/32532

摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

摘要翻译： 包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部 设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。 分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。 分离电极面对带状基板的表面的总面积与其上安装有分离电极的非分割电极的面积相同。 这提高了用于形成沉积膜的装置中产生的等离子体的均匀性，并且能够降低形成沉积膜所需的成本。

公开(公告)号：US5927994A

公开(公告)日：1999-07-27

申请号：US782811

申请日：1997-01-13

申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.

摘要翻译： 描述了通过等离子体CVD制造薄膜的方法。 该方法包括以这样的方式向功率电极供电，使得位于等离子体放电空间中的功率施加电极的等离子体放电的自偏压相对于接地电极为正电位。

公开(公告)号：US06638359B2

公开(公告)日：2003-10-28

申请号：US09772988

申请日：2001-01-31

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  C23C18/14 ,  H01L31/1804 ,  H05K3/02 ,  H05K3/105 ,  Y02E10/547 ,  Y02P70/521

摘要： A deposited film forming apparatus has a vacuum chamber containing a power applying electrode spaced above a grounded flat plate base member. The power applying electrode is fixed to the base member with a plurality of electrically insulating fastening members, at positions effective to suppress deformation of the power applying electrode, wherein an electrically insulating spacer is placed between the power supplying electrode and the base member to electrically insulate said power applying electrode from the base member.

摘要翻译： 沉积膜形成装置具有真空室，该真空室包含在接地平板基体上方间隔开的功率施加电极。 功率施加电极在有效抑制功率施加电极的变形的位置处用多个电绝缘的紧固构件固定到基底构件，其中电绝缘间隔物放置在供电电极和基底构件之间以电绝缘 所述功率施加电极从所述基底构件。

公开(公告)号：US06632284B2

公开(公告)日：2003-10-14

申请号：US09767856

申请日：2001-01-24

申请人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

发明人： Takeshi Shishido ,  Masahiro Kanai ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545 ,  H01J37/32532

摘要： A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted.

摘要翻译： 包括由单个平面板组成的非分裂电极和布置在非分离电极上以与非分离电极电接触的六个分离电极的双层结构电力施加电极设置在上部 设置在真空容器内的排出室的侧面，使得电力施加电极平行面对带状基板。 分割电极以形成平面的方式布置，并且分离电极的面对带状基板和带状基板的表面之间的距离是均匀的。 分开电极面对带状基板的表面的总面积与安装有分离电极的非分割电极的面积相同。

公开(公告)号：US06526910B2

公开(公告)日：2003-03-04

申请号：US09727440

申请日：2000-12-04

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/5096 ,  C23C16/545

摘要： A film-forming apparatus by means of plasma CVD, comprising at least a vacuum chamber, a power application electrode for introducing a discharging power into said vacuum chamber, and a raw material gas supply means for supplying a film-forming raw material gas into said vacuum chamber, said power application electrode being arranged in said vacuum chamber so as to oppose to a substrate arranged in said vacuum chamber, characterized in that said power application electrode has a reinforcing member or said power application electrode comprises a power application electrode with no reinforcing member which has a thickness which is greater than a distance between said substrate and said power application electrode. A film-forming method using said film-forming apparatus.

公开(公告)号：US6153013A

公开(公告)日：2000-11-28

申请号：US800512

申请日：1997-02-14

申请人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01L31/0392 ,  H01L31/20 ,  C23C16/06

CPC分类号： C23C16/4409 ,  C23C16/44 ,  C23C16/545 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.

摘要翻译： 本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜 通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构 在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

公开(公告)号：US5720826A

公开(公告)日：1998-02-24

申请号：US657066

申请日：1996-05-29

申请人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.

摘要翻译： 提供适用于实际使用，成本低，可靠性高，光电转换效率高的光电元件及其制造方法。 在具有非单晶半导体层叠的光电元件中，在第一导电型半导体层上层叠至少i型半导体层和第二导电型半导体层，第二导电型半导体层具有层 A通过使用至少化合价电子控制剂和主要构成元素的CVD工艺将i型半导体层的表面暴露于含有价电子控制剂和沉积在层A上的层B的等离子体 i型半导体层。

公开(公告)号：US06472296B2

公开(公告)日：2002-10-29

申请号：US09912343

申请日：2001-07-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 一种制造半导体层的方法，该方法是通过将原料气体引入放电室并向室内供给高频电力，以通过放电来分解原料气体，由此在放电室内的基板上形成半导体层，该方法包括 提供至少非常高频（VHF）的高频功率作为高频功率的步骤; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。