公开(公告)号：US5824453A

公开(公告)日：1998-10-20

申请号：US946915

申请日：1997-10-09

申请人： Sung-Bock Kim ,  Seong-Ju Park ,  Jeong-Rae Ro ,  El-Hang Lee

发明人： Sung-Bock Kim ,  Seong-Ju Park ,  Jeong-Rae Ro ,  El-Hang Lee

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  G03F7/00

CPC分类号： H01L21/02395 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/30617

摘要： Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.

摘要翻译： 本发明公开了一种GaAs衬底的制造方法，该GaAs衬底具有较高密度的V形沟槽，即双重密度，该方法包括以下步骤：在GaAs衬底的主表面上形成Si 3 N 4层; 使用光刻法构图Si 3 N 4层以形成具有最小宽度的图案化的Si 3 N 4层; 使用图案化的Si 3 N 4层作为掩模对GaAs衬底进行湿法蚀刻，以在图案化的Si 3 N 4之下形成GaAs衬底的（111）和（100）表面; 在GaAs衬底上选择性地生长GaAs膜，使用图案化的Si 3 N 4层作为掩模进行蚀刻，以便仅在GaAs衬底的（100）表面上形成具有两个（111）面的GaAs膜; 并去除Si3N4层。 可以使用由衬底的表面取向引起的生长速度差，在GaAs衬底上形成V形槽，因此可以以双重密度形成沟槽。

公开(公告)号：US5770475A

公开(公告)日：1998-06-23

申请号：US717903

申请日：1996-09-23

申请人： Sung-Bock Kim ,  Jeong-Rae Ro ,  El-Hang Lee

发明人： Sung-Bock Kim ,  Jeong-Rae Ro ,  El-Hang Lee

IPC分类号： H01L21/205 ,  H01L21/306 ,  H01L21/00

CPC分类号： B82Y10/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/02658 ,  H01L21/30617

摘要： A crystal growth method for a compound semiconductor is capable of forming a plurality of quantum wells (formed of a barrier layer having a large energy band gap and an active layer having a small energy band gap) on the compound semiconductor substrate. After etching a V-shaped groove having a (111) surface with a predetermined angle .theta.1 with respect to the (100) surface on the GaAs semiconductor substrate, the substrate is further etched by a hydrochloric solution and a solution of H.sub.2 SO.sub.4 :H.sub.2 O.sub.2 :H.sub.2 O=20:1 to cause the V-shaped groove walls to become a non-(111) surface having a lower predetermined slope angle .theta.2. The quantum wells then grown in the bottom of the V-shaped groove will be effectively disconnected from simultaneous growths on the side walls of the groove thus giving rise to closely controlled multi-dimensional quantum well structures.

摘要翻译： 化合物半导体的晶体生长方法能够在化合物半导体基板上形成多个量子阱（由具有大能带隙的势垒层和具有小能带隙的有源层形成）。 在GaAs半导体衬底上蚀刻具有相对于（100）表面的具有预定角度θ（111）的（111）表面的V形槽之后，用盐酸溶液和H 2 SO 4 :H 2 O 2： H 2 O = 20:1使V形槽壁成为具有较低预定倾斜角度θ2的非（111）表面。然后在V形槽的底部生长的量子阱将被有效地从 在槽的侧壁上同时生长，从而产生紧密控制的多维量子阱结构。

公开(公告)号：US5858818A

公开(公告)日：1999-01-12

申请号：US716646

申请日：1996-09-16

申请人： Jeong-Rae Ro ,  Seong-Bock Kim ,  El-Hang Lee

发明人： Jeong-Rae Ro ,  Seong-Bock Kim ,  El-Hang Lee

IPC分类号： H01L21/205 ,  H01L21/203

CPC分类号： H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/11 ,  Y10S148/16

摘要： An epitaxial growth method for a compound semiconductor thin film, capable of forming a p-n junction with an atomic-scale ultra-micro structure is disclosed. The method involves loading the compound semiconductor substrate in a reaction chamber, injecting Group V and III metal organic source gases not processed by a thermal pre-decomposition process into the reaction chamber, and growing a p- or n-type compound semiconductor on the compound semiconductor substrate while adjusting the growth temperature of the p- or n-type compound semiconductor.

摘要翻译： 公开了能够形成具有原子尺度超微结构的p-n结的化合物半导体薄膜的外延生长方法。 该方法包括将化合物半导体衬底装载在反应室中，将未经热预分解过程处理的V族和III族金属有机源气体注入到反应室中，并在化合物上生长p型或n型化合物半导体 半导体衬底，同时调节p型或n型化合物半导体的生长温度。

公开(公告)号：US5500047A

公开(公告)日：1996-03-19

申请号：US354037

申请日：1994-12-06

申请人： Kang-Ho Park ,  Jeong-Sook Ha ,  Seong-Ju Park ,  El-Hang Lee

发明人： Kang-Ho Park ,  Jeong-Sook Ha ,  Seong-Ju Park ,  El-Hang Lee

IPC分类号： H01L21/203 ,  C01B3/00 ,  C23C16/00 ,  C23C16/452 ,  G21K5/00

CPC分类号： C01B3/0094 ,  C23C16/452 ,  Y02E60/327

摘要： A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.2 collision efficiency is significantly improved by increased surface collisions with the bent portions. Because the bent portions of the nozzle are heated by the heating member, the construction of the apparatus is simplified.

摘要翻译： 公开了一种用于在真空容器中将H 2分子解离成原子氢并将样品表面上的氢原子吸附的表面吸附装置。 真空管安装在真空容器中。 喷嘴连接到具有多个弯曲部分的真空管。 加热构件从电源接收电力并将喷嘴加热至预定温度。 热屏蔽构件位于喷嘴的一端和样品表面之间的原子氢的路径中，用于屏蔽样品表面免受从喷嘴辐射的热。 H2分子与弯曲部分的内壁表面碰撞，容易解离成原子氢。 原子解离的氢向样品表面传播并吸附在样品表面上。 由于喷嘴包括弯曲部分，所以H2分子经常与喷嘴的内壁表面碰撞以容易地解离成原子氢。 通过增加与弯曲部分的表面碰撞，H2碰撞效率显着提高。 由于喷嘴的弯曲部分被加热部件加热，因此简化了装置的结构。

公开(公告)号：US6019008A

公开(公告)日：2000-02-01

申请号：US903797

申请日：1997-07-31

申请人： Sung-Bock Kim ,  Wan-Soo Yun ,  El-Hang Lee

发明人： Sung-Bock Kim ,  Wan-Soo Yun ,  El-Hang Lee

IPC分类号： H01L21/68 ,  B25J1/08 ,  B25J18/02

CPC分类号： B25J18/025 ,  B25J1/08 ,  Y10S414/135 ,  Y10T403/32467 ,  Y10T74/18848 ,  Y10T74/20468

摘要： A linear motion apparatus for moving an object in a vacuum chamber comprising an antenna or a telescoping shaft such as a fishing rod to effectively utilize space, and to avoid the need of a rear projection thereby achieving stability. The linear motion apparatus includes: a body having a space portion penetrated horizontally; a rotary handle which penetrates at a right angle to the space portion of the body thereby controlling a linear motion; locking portion which is mounted in the space portion of the body, is inserted into a shaft of the rotary handle, and used to lock the motion; a guide rod which is formed as a multistage rod, whose one end is inserted and fixed into a predetermined position of the space portion of the body; linear motion force providing portion whose one end is fixed to the rotary plate and the other end is fixed to a nose portion of the guide rod, thereby providing a linear motion force to the guide rod; and a bellows seal which surrounds a circumference of the guide rod, is shrunken or expanded according to a linear motion of the guide rod. As a result, this apparatus performs a linear motion control by a contraction and expansion under ultra high vacuum.

摘要翻译： 一种用于在包括天线或诸如钓鱼杆的伸缩轴的真空室中移动物体的线性运动装置，以有效利用空间，并且避免了后部突出物的需要，从而实现稳定性。 线性运动装置包括：主体，其具有水平地穿透的空间部分; 旋转手柄，其以直角穿过主体的空间部分，从而控制直线运动; 安装在主体的空间部分中的锁定部分插入旋转手柄的轴中，并用于锁定运动; 导杆，其形成为多级杆，其一端插入并固定到本体的空间部分的预定位置; 直线运动力提供部分，其一端固定在旋转板上，另一端固定在导杆的鼻部，从而向导杆提供线性运动力; 并且围绕导杆的圆周的波纹管密封件根据导杆的直线运动而收缩或膨胀。 结果，该装置通过在超高真空下的收缩和膨胀进行直线运动控制。

公开(公告)号：US5751468A

公开(公告)日：1998-05-12

申请号：US717127

申请日：1996-09-20

申请人： Kyung-Sook Hyun ,  O-Kyun Kwon ,  Kwang-Joon Kim ,  El-Hang Lee

发明人： Kyung-Sook Hyun ,  O-Kyun Kwon ,  Kwang-Joon Kim ,  El-Hang Lee

IPC分类号： G02B26/00 ,  G02F1/017 ,  G02F1/09

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F2201/346

摘要： A vertical modulator with a dual mode distributed Bragg reflection (DBR), includes a pair of integrated elements using different wavelengths to provide functions of logical operation, data switching and wavelength conversion. The optical device includes a first optical structure operating at a first wavelength (.lambda..sub.1) and a second optical structure operating at a second wavelength (.lambda..sub.2). The first and second optical structures are formed over a semiconductor substrate. The first optical structure, which operates at the first wavelength (.lambda..sub.1), transmits its data to the second optical structure so that data corresponding to the second wavelength (.lambda..sub.2) can be output. Since the wavelength of input light is different from the wavelength of output light, the optical device serves as a modulator which performs a logic operation and switching function while carrying out wavelength conversion.

摘要翻译： 具有双模式分布式布拉格反射（DBR）的垂直调制器包括使用不同波长的一对集成元件，以提供逻辑运算，数据切换和波长转换的功能。 光学器件包括以第一波长（λ1）工作的第一光学结构和以第二波长（λ2）操作的第二光学结构。 第一和第二光学结构形成在半导体衬底上。 在第一波长（λ1）下操作的第一光学结构将其数据传输到第二光学结构，使得可以输出对应于第二波长（λ2）的数据。 由于输入光的波长与输出光的波长不同，所以光学器件用作在执行波长转换时执行逻辑运算和切换功能的调制器。

公开(公告)号：US5450507A

公开(公告)日：1995-09-12

申请号：US354867

申请日：1994-12-09

申请人： Jong-Dug Shin ,  Min-Yong Jeon ,  El-Hang Lee

发明人： Jong-Dug Shin ,  Min-Yong Jeon ,  El-Hang Lee

IPC分类号： G02B6/00 ,  G02B6/28 ,  G02B6/30 ,  H04B10/00 ,  H04L12/70 ,  H04Q11/00

CPC分类号： G02B6/2861 ,  H04Q11/0003

摘要： A fiber-optic address detector comprises fiber-optic delay lines on one surface of which a metal thin film is evaporated, the fiber-optic delay lines being connected in a melting state to fiber-optic couplers, wherein inputting address photonic signals are tapped by the inputting fiber-optic couplers, reflected by the metal thin films at the end portion of the fiber-optic delay line and then re-combined by the inputting fiber-optic coupler, whereby it can reduce the number of the fiber-optic coupler used in the conventional fiber-optic address detector to one half as well as obtain the same address detection effect.

摘要翻译： 光纤地址检测器包括在其表面上的金属薄膜被蒸发的光纤延迟线，光纤延迟线以熔化状态连接到光纤耦合器，其中输入地址光信号由 输入光纤耦合器，由光纤延迟线端部的金属薄膜反射，然后由输入光纤耦合器重新组合，从而可以减少使用的光纤耦合器的数量 在传统的光纤地址检测器中一半，以及获得相同的地址检测效果。

公开(公告)号：US5448080A

公开(公告)日：1995-09-05

申请号：US274192

申请日：1994-07-12

申请人： Seon-Gyu Han ,  Jong-Tai Lee ,  Byueng-Su Yoo ,  Tae-Hyung Zyung ,  Young-Wan Choi ,  Pyong-Woon Park ,  El-Hang Lee

发明人： Seon-Gyu Han ,  Jong-Tai Lee ,  Byueng-Su Yoo ,  Tae-Hyung Zyung ,  Young-Wan Choi ,  Pyong-Woon Park ,  El-Hang Lee

IPC分类号： G02F1/015 ,  G02F1/01 ,  G02F1/35 ,  H01L27/14 ,  H01L31/00

CPC分类号： G02F1/01716 ,  B82Y20/00 ,  G02F2001/01733

摘要： Disclosed is an ultrafast optical switching device having two types of multiple quantum well structures to be connected with each other, the device comprising a semi-insulating substrate; and a first and a second multiple quantum well structure formed sequentially on the substrate and united with each other to produce a double-junction multiple quantum well structure. Each of the multiple quantum well structures has nonlinear optical effects and two life time constants present while switching off in the device. One of the life time constants corresponds to a short life time constant to be determined dependent on electrons in the double-junction multiple quantum well structure and the other of the life time constants corresponds to a long life time constant to be determined dependent on holes and lattices therein. The multiple quantum well structures are formed in such a manner that short life time constants thereof may be in-phase with each other and long life time constants thereof may be out-of-phase to each other. The multiple quantum well structures are formed differently from each other in composition.

摘要翻译： 公开了一种具有彼此连接的两种类型的多量子阱结构的超快速光学开关器件，该器件包括半绝缘衬底; 以及在衬底上顺序地形成并彼此结合以产生双结多量子阱结构的第一和第二多量子阱结构。 多个量子阱结构中的每个都具有非线性光学效应，并且在器件中关断时存在两个寿命常数。 寿命常数之一对应于取决于双结多量子阱结构中的电子而确定的短寿命常数，而另一个寿命常数对应于取决于孔的长寿命时间常数， 格子。 多量子阱结构以这样的方式形成，使得其寿命短的常数可以彼此同相，并且其长寿命时间常数可能彼此不同相。 多个量子阱结构在组成上彼此不同地形成。

公开(公告)号：US5623140A

公开(公告)日：1997-04-22

申请号：US451059

申请日：1995-05-25

申请人： Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

发明人： Young-Wan Choi ,  O-Kyun Kwon ,  El-Hang Lee

IPC分类号： G02F3/02 ,  H01J40/14

CPC分类号： G02F3/028

摘要： Disclosed is a nonbiased bistable optical device and a method for fabricating the device, which has a semi-insulating GaAs substrate; a lower mirror having a plurality of reflecting layers which are repeatedly formed on said substrate at least more than twelve times, each of said reflecting layers having a first reflecting film having a first refractive index on said substrate and a second reflecting film a second refractive index different from the first refractive index; a first contact layer formed on the lower mirror; a first buffer layer formed on the first contact layer; a multiple quantum well(MQW) having a plurality of shallow layers which are repeatedly formed, each of said shallow layers having a barrier and a shallow quantum well; a second buffer layer grown on said MQW; and a second contact layer formed on said second buffer layer. The device has an excellent bistablity even without an external applied voltage.

摘要翻译： 公开了一种非偏置双稳态光学器件及其制造方法，该器件具有半绝缘GaAs衬底; 具有多个反射层的下反射镜，所述多个反射层在所述基板上反复形成至少十二次，每个所述反射层具有在所述基板上具有第一折射率的第一反射膜和第二反射膜，第二折射率 不同于第一折射率; 形成在下反射镜上的第一接触层; 形成在所述第一接触层上的第一缓冲层; 具有重复形成的多个浅层的多量子阱（MQW），每个所述浅层具有阻挡层和浅量子阱; 在所述MQW上生长的第二缓冲层; 以及形成在所述第二缓冲层上的第二接触层。 即使没有外部施加电压，该器件也具有优异的双稳态。

公开(公告)号：US5592319A

公开(公告)日：1997-01-07

申请号：US360140

申请日：1994-12-20

申请人： Hak-Kyu Lee ,  Kyong-Hon Kim ,  Seo-Yeon Park ,  El-Hang Lee

发明人： Hak-Kyu Lee ,  Kyong-Hon Kim ,  Seo-Yeon Park ,  El-Hang Lee

IPC分类号： G02B6/00 ,  G02B26/02 ,  G02B26/08 ,  G02F1/313 ,  G02F1/35 ,  H04Q11/00 ,  H04J14/02

CPC分类号： H04Q11/0001

摘要： An all-optical signal processing apparatus of a non-linear fiber loop mirror type comprises a very high-speed all-optical switch that can be used as a reverse multiplexed switch in a high-speed time division optical communication. The apparatus includes a non-linear loop mirror for switching signal light by adjusting light using the non-linear effect of an optical fiber and the characteristics of a sagnac interferometer as the fundamental configuration. The all-optical switch is constructed so that another adjustment light having an appropriate time delay with respect to an existing adjusting light is additionally introduced in order to compensate for the limitation on the switching bandwidth imposed by the walk-off between adjusting and signal lights in a conventional non-linear optical fiber loop mirror. This compensates for the cross-talk of the noise signals due to DC components generated in the conventional apparatus. A switching window of a desirable size is obtained by properly adjusting the time delay between two adjusting lights and resolving the bandwidth limitation of the switch due to the walk-off of the adjusting and signal lights according to the timing jitter of signal light.

摘要翻译： 非线性光纤环路反射镜的全光信号处理装置包括可以用作高速时分光通信中的反向多路复用开关的非常高速的全光开关。 该装置包括一个用于通过使用光纤的非线性效应调节光和用作基本结构的萨尼亚克干涉仪的特性来切换信号光的非线性环路镜。 全光开关被构造成使得对于现有的调节光具有适当的时间延迟的另一个调节光被额外地引入，以便补偿由调节和信号光之间的偏移所施加的开关带宽的限制 传统的非线性光纤环路镜。 这补偿了由于常规装置中产生的DC分量引起的噪声信号的串扰。 通过适当地调节两个调节灯之间的时间延迟并根据信号光的定时抖动由于调节和信号灯的脱离而解决开关的带宽限制，获得所需尺寸的开关窗口。