公开(公告)号：US20080177200A1

公开(公告)日：2008-07-24

申请号：US12018337

申请日：2008-01-23

申请人： Susumu IKEHARA ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

发明人： Susumu IKEHARA ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

IPC分类号： A61B10/02

CPC分类号： A61B10/025 ,  A61B17/1617 ,  A61B17/1633 ,  A61B17/1635 ,  A61B17/17 ,  A61B2010/0258

摘要： The bone marrow harvesting drill of the invention includes an inner needle having a cutting edge at the tip thereof; a tubular mantle that receives the inner needle thereinto so that the inner needle and the tubular mantle are detachably attached; and a lock mechanism that prevents the axial rotation of the tubular mantle and the inner needle relative to each other; the inner needle having a groove formed at the tip thereof projecting from the tubular mantle for discharging bone scraps produced by the cutting edge at the tip of the inner needle; and the tubular mantle having a cutting edge formed at the tip edge thereof and a helical groove extending from the tip edge to at least part of the peripheral surface of the tubular mantle so as to be flush with the groove of the inner needle.

摘要翻译： 本发明的骨髓采集钻头包括在其顶端具有切割边缘的内针; 将内针容纳在其中的管状罩体，使得内针和管状罩可拆卸地安装; 以及防止管状罩和内针相对于彼此的轴向旋转的锁定机构; 所述内针具有形成在其尖端处的从所述管状罩突出的槽，用于排出由所述内针的尖端处的所述切割刃产生的骨屑; 并且所述管状壁具有形成在其前端缘处的切削刃，以及螺旋槽，其从所述前端边缘延伸到所述管状套管的周面的至少一部分，以与所述内针的槽齐平。

公开(公告)号：US08070690B2

公开(公告)日：2011-12-06

申请号：US12018337

申请日：2008-01-23

申请人： Susumu Ikehara ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

发明人： Susumu Ikehara ,  Hiroshi Shirafuji ,  Shuji Nakamura ,  Nobuo Shimoda ,  Katsuyuki Sado

IPC分类号： A61B10/02

CPC分类号： A61B10/025 ,  A61B17/1617 ,  A61B17/1633 ,  A61B17/1635 ,  A61B17/17 ,  A61B2010/0258

摘要： The bone marrow harvesting drill of the invention includes an inner needle having a cutting edge at the tip thereof; a tubular mantle that receives the inner needle thereinto so that the inner needle and the tubular mantle are detachably attached; and a lock mechanism that prevents the axial rotation of the tubular mantle and the inner needle relative to each other; the inner needle having a groove formed at the tip thereof projecting from the tubular mantle for discharging bone scraps produced by the cutting edge at the tip of the inner needle; and the tubular mantle having a cutting edge formed at the tip edge thereof and a helical groove extending from the tip edge to at least part of the peripheral surface of the tubular mantle so as to be flush with the groove of the inner needle.

摘要翻译： 本发明的骨髓采集钻头包括在其顶端具有切割边缘的内针; 将内针容纳在其中的管状罩体，使得内针和管状罩可拆卸地安装; 以及防止管状罩和内针相对于彼此的轴向旋转的锁定机构; 所述内针具有形成在其尖端处的从所述管状罩突出的槽，用于排出由所述内针的尖端处的所述切割刃产生的骨屑; 并且所述管状壁具有形成在其前端缘处的切削刃，以及螺旋槽，其从所述前端边缘延伸到所述管状套管的周面的至少一部分，以与所述内针的槽齐平。

公开(公告)号：US20060247552A1

公开(公告)日：2006-11-02

申请号：US11487962

申请日：2006-06-27

申请人： Susumu Ikehara ,  Shuji Nakamura ,  Masato Aoki ,  Masaaki Numazawa ,  Masakazu Adachi

发明人： Susumu Ikehara ,  Shuji Nakamura ,  Masato Aoki ,  Masaaki Numazawa ,  Masakazu Adachi

IPC分类号： A61B10/00

CPC分类号： A61B10/025 ,  A61B10/0096 ,  A61B17/1637 ,  A61B2010/0258

摘要： The bone marrow harvesting set according to the invention includes: a centrifuge container used for harvesting bone marrow; a cap with a collection inlet; and a collection tube with connectors attached to both ends thereof, the set being constructed in such a manner as to put the cap on the centrifuge container, fit one of the connectors into the collection inlet of the cap, and fit the other connector into the mantle of the bone marrow harvesting needle so as to collect bone marrow. The bone marrow harvesting needle includes: a tubular mantle and an inner needle with its tip allowed to project from the mantle, the inner needle having a drilling edge formed at its tip and the mantle having a cutting edge formed at its tip.

摘要翻译： 根据本发明的骨髓采集装置包括：用于收获骨髓的离心容器; 带收集入口的帽子; 以及收纳管，其连接器连接到其两端，所述组件以将盖放置在离心机容器上的方式构造，将一个连接器装配到盖的收集入口中，并将另一个连接器装配到 骨髓采集针头，以收集骨髓。 骨髓采集针包括：管状地幔和内针，其顶端允许从地幔突出，内针具有形成在其顶端处的钻孔边缘，并且幔具有在其尖端处形成的切割边缘。

公开(公告)号：US20170327969A1

公开(公告)日：2017-11-16

申请号：US15607319

申请日：2017-05-26

申请人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01L33/16 ,  H01L29/20 ,  H01L29/04 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01S5/343

CPC分类号： C30B25/18 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

公开(公告)号：US09133564B2

公开(公告)日：2015-09-15

申请号：US13283862

申请日：2011-10-28

申请人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

发明人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

IPC分类号： C30B7/10 ,  C30B29/40

CPC分类号： C30B7/105 ,  C30B29/403 ,  Y10T428/24479

摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面 一起形成凹面。

公开(公告)号：US09040327B2

公开(公告)日：2015-05-26

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08795440B2

公开(公告)日：2014-08-05

申请号：US13313335

申请日：2011-12-07

申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/02

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。

公开(公告)号：US08779308B2

公开(公告)日：2014-07-15

申请号：US13367752

申请日：2012-02-07

申请人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

发明人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

IPC分类号： H01H9/26 ,  H01H3/12 ,  H01H13/36 ,  H01H13/14

CPC分类号： H01H3/125 ,  H01H13/14 ,  H01H13/36 ,  H01H13/702 ,  H01H2203/038 ,  H01H2227/036

摘要： A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.

摘要翻译： 一种钥匙开关装置，包括键顶; 一对连接构件，连接到键顶并互锁，以引导键顶的垂直运动; 开关机构，其包括根据键顶的垂直运动能够打开和闭合电路的接触部分的膜片开关; 安装在薄片开关上的柔性薄膜片; 以及附接到所述薄膜片的壳体，所述壳体适于将所述连接构件连接到所述薄膜片。

公开(公告)号：US08729671B2

公开(公告)日：2014-05-20

申请号：US13327521

申请日：2011-12-15

申请人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20

CPC分类号： C30B33/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003

摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.

摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。

公开(公告)号：US08709371B2

公开(公告)日：2014-04-29

申请号：US11921396

申请日：2005-07-08

申请人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

发明人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。