摘要:
Disclosed herein are contact pads for use with integrated circuit (IC) packages. In some embodiments, a contact pad disclosed herein may be disposed on a substrate of an IC package, and may include a metal projection portion and a metal recess portion. Each of the metal projection portion and the metal recess portion may have a solder contact surface. The solder contact surface of the metal recess portion may be spaced away from the solder contact surface of the metal projection portion. Related devices and techniques are also disclosed herein, and other embodiments may be claimed.
摘要:
A warp controlled package includes a substrate that assumes a warped configuration according to the application of heat. At least one device is coupled along the substrate. A plurality of electrical contacts extend between at least the device and the substrate. One or more counter moment elements are coupled with the substrate. The one or more counter moment elements include a passive configuration and a counter moment configuration. In the counter moment configuration the one or more counter moment elements are configured to apply a counter moment to the substrate to counteract the warped configuration. In the passive configuration the one or more counter moment elements are configured to apply a neutral counter moment less than the counter moment of the counter moment configuration.
摘要:
Provided are an electronic assembly and method for forming the same, comprising a first element having a first surface and a second element having a second surface.Electrical connections are provided between the first and the second elements formed by heating solder bumps. At least one collapse limiter structure is coupled to at least one of the first and the second surfaces, wherein the at least one collapse limiter structure is between at least two of the electrical connections.
摘要:
Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.
摘要:
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include forming an opening in a dielectric material of a package substrate, and then plating a conductive interconnect structure in the opening utilizing a plating process. The plating process may comprises a conductive metal and a dopant comprising between about 0.05 and 10 percent weight, wherein the dopant comprises at least one of magnesium, zirconium and zinc.
摘要:
A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.
摘要:
A method and an article made by a method for embedding optical fibers into an organic laminate structure. The optical fiber cabling, along with its cladding, is placed upon a first laminate layer that includes a composite made of silica fillers and a frictionless material such as polytetrafluoroethylene (PTFE). Then a second layer of PTFE material with silica fillers and copper sheeting is placed on top of the PTFE with silica fillers composite. The PTFE material with silica fillers flows about the optical fibers at a temperature approximately fifty degrees above the PTFE with silica fillers material's melting point. This procedure completely encases the optical fibers within an opaque sheath.
摘要:
Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.
摘要:
A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the liquefied epoxy to the die and substrate, and maintaining the die and substrate at a temperature where the epoxy cures for a selected amount of time.
摘要:
A method, apparatus and system with a semiconductor package including a thermal interface material dam enclosing a volume of thermal interface material.