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公开(公告)号:US08174129B2
公开(公告)日:2012-05-08
申请号:US12853711
申请日:2010-08-10
申请人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装基板优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个迹线,连接BGA球和焊料凸块。 半导体芯片可以安装在焊料凸块上。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US07804177B2
公开(公告)日:2010-09-28
申请号:US11493375
申请日:2006-07-26
申请人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of through-hole vias are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装基板优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个通孔,连接BGA球和焊料凸块。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US20100301477A1
公开(公告)日:2010-12-02
申请号:US12853711
申请日:2010-08-10
申请人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
IPC分类号: H01L23/498 , H01L23/488
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装基板优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个迹线,连接BGA球和焊料凸块。 半导体芯片可以安装在焊料凸块上。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US20080023850A1
公开(公告)日:2008-01-31
申请号:US11493375
申请日:2006-07-26
申请人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
IPC分类号: H01L23/48
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of through-hole vias are formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装衬底优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个通孔,连接BGA球和焊料凸块。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US08704383B2
公开(公告)日:2014-04-22
申请号:US13452562
申请日:2012-04-20
申请人: Szu-Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu-Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces is formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装基板优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个迹线,连接BGA球和焊料凸块。 半导体芯片可以安装在焊料凸块上。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US20120199974A1
公开(公告)日:2012-08-09
申请号:US13452562
申请日:2012-04-20
申请人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Wei Lu , Clinton Chao , Ann Luh , Tjandra Winata Karta , Jerry Tzou , Kuo-Chin Chang
IPC分类号: H01L23/48
CPC分类号: H01L23/147 , H01L23/49816 , H01L23/49833 , H01L23/49838 , H01L23/5386 , H01L25/0655 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , H01L2924/01327 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/19107 , H01L2924/00 , H01L2224/0401
摘要: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces is formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.
摘要翻译: 硅基薄封装衬底用于封装半导体芯片。 硅基薄封装基板优选具有小于约200μm的厚度。 在硅基薄封装衬底中形成多个迹线,连接BGA球和焊料凸块。 半导体芯片可以安装在焊料凸块上。 硅基薄封装衬底可以用作半导体芯片的载体。
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公开(公告)号:US20070246821A1
公开(公告)日:2007-10-25
申请号:US11408155
申请日:2006-04-20
申请人: Szu Lu , Clinton Chao , Tjandra Karta , Jerry Tzou , Kuo-Chin Chang
发明人: Szu Lu , Clinton Chao , Tjandra Karta , Jerry Tzou , Kuo-Chin Chang
CPC分类号: H01L21/563 , H01L21/6835 , H01L23/055 , H01L23/3121 , H01L23/36 , H01L23/49816 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/451 , H01L2224/48145 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要: A semiconductor package assembly having reduced stresses and a method for forming the same are provided. The method includes providing a package substrate comprising a base material, forming an interconnect structure overlying the package substrate, attaching at least one chip to a first surface of the package substrate, thinning the package substrate from a second surface opposite the first surface wherein the semiconductor material is substantially removed, and attaching ball grid array (BGA) balls to deep vias exposed on the second surface of the package substrate after thinning the package substrate.
摘要翻译: 提供了具有减小的应力的半导体封装组件及其形成方法。 该方法包括提供包括基材的封装衬底,形成覆盖封装衬底的互连结构,将至少一个芯片附接到封装衬底的第一表面,使封装衬底从与第一表面相反的第二表面变薄,其中半导体 基本上去除了材料,并且在将封装衬底细化之后,将球栅阵列(BGA)球附着到在封装衬底的第二表面上暴露的深通孔。
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公开(公告)号:US20080122114A1
公开(公告)日:2008-05-29
申请号:US11563490
申请日:2006-11-27
申请人: Szu Wei Lu , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
发明人: Szu Wei Lu , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
CPC分类号: H01L25/0657 , H01L21/76898 , H01L23/3171 , H01L23/495 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/50 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05567 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/16 , H01L2224/32145 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48229 , H01L2224/48247 , H01L2224/48624 , H01L2224/48647 , H01L2225/0651 , H01L2225/06575 , H01L2225/06589 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/04953 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening.
摘要翻译: 半导体结构包括第一基板和粘合在第一基板上的第二基板。 第一衬底包括形成在第一衬底上的钝化层。 钝化层包括至少一个第一开口,暴露在第一衬底上形成的第一焊盘。 第二基板包括与第一开口对准并面向第一开口的至少一个第二开口。
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公开(公告)号:US07851331B2
公开(公告)日:2010-12-14
申请号:US11563490
申请日:2006-11-27
申请人: Szu Wei Lu , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
发明人: Szu Wei Lu , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
IPC分类号: H01L21/46
CPC分类号: H01L25/0657 , H01L21/76898 , H01L23/3171 , H01L23/495 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/50 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05567 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/16 , H01L2224/32145 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48229 , H01L2224/48247 , H01L2224/48624 , H01L2224/48647 , H01L2225/0651 , H01L2225/06575 , H01L2225/06589 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/04953 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening.
摘要翻译: 半导体结构包括第一基板和粘合在第一基板上的第二基板。 第一衬底包括形成在第一衬底上的钝化层。 钝化层包括至少一个第一开口,暴露在第一衬底上形成的第一焊盘。 第二基板包括与第一开口对准并面向第一开口的至少一个第二开口。
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公开(公告)号:US20110042827A1
公开(公告)日:2011-02-24
申请号:US12939241
申请日:2010-11-04
申请人: Szu Wei LU , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
发明人: Szu Wei LU , Mirng-Ji Lii , Chen-Shien Chen , Hua-Shu Wu , Jerry Tzou
IPC分类号: H01L23/48
CPC分类号: H01L25/0657 , H01L21/76898 , H01L23/3171 , H01L23/495 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/50 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05567 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/131 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/16 , H01L2224/32145 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48229 , H01L2224/48247 , H01L2224/48624 , H01L2224/48647 , H01L2225/0651 , H01L2225/06575 , H01L2225/06589 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/04953 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening.
摘要翻译: 半导体结构包括第一基板和粘合在第一基板上的第二基板。 第一衬底包括形成在第一衬底上的钝化层。 钝化层包括至少一个第一开口,暴露在第一衬底上形成的第一焊盘。 第二基板包括与第一开口对准并面向第一开口的至少一个第二开口。
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