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公开(公告)号：US20240342695A1
公开(公告)日：2024-10-17
申请号：US18294641
申请日：2022-08-02
IPC分类号： B01J35/39 , B01J19/00 , B01J19/12 , B01J23/26 , B01J23/46 , B01J35/00 , B01J35/30 , B01J35/33 , B01J35/45 , B01J35/53 , B01J35/58 , B01J37/34
CPC分类号： B01J35/39 , B01J19/0013 , B01J19/127 , B01J23/26 , B01J23/464 , B01J35/19 , B01J35/33 , B01J35/397 , B01J35/398 , B01J35/45 , B01J35/53 , B01J35/58 , B01J37/345 , B01J2219/00144 , B01J2219/00155 , B01J2219/0892
摘要： A method of promoting a chemical reaction includes immersing a device in a solution contained in a reaction chamber, the device including a substrate and a plurality of conductive projections supported by the substrate, each conductive projection of the plurality of conductive projections having a semiconductor composition, irradiating the device to drive the chemical reaction, and controlling a temperature of the solution contained in the reaction chamber such that the temperature is maintained in a temperature range closer to a boiling temperature of the solution than a freezing temperature of the solution
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公开(公告)号：US20230070465A1
公开(公告)日：2023-03-09
申请号：US17940759
申请日：2022-09-08
IPC分类号： H01L21/02 , C30B25/10 , C30B25/18 , H01L27/1159 , H01L21/28 , H01L29/51 , H01L29/78 , H01L29/66 , H01L29/778 , H01L29/20 , H01L29/06 , C30B29/40
摘要： A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of gallium nitride. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy. The wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.
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公开(公告)号：US11909176B2
公开(公告)日：2024-02-20
申请号：US17071832
申请日：2020-10-15
发明人： Yong-Ho Ra , Roksana Tonny Rashid , Xianhe Liu , Zetian Mi
CPC分类号： H01S5/341 , H01S5/11 , H01S5/183 , H01S5/30 , H01S5/320275 , H01S5/32308 , H01S5/34333
摘要： An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.
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公开(公告)号：US11876147B2
公开(公告)日：2024-01-16
申请号：US16424157
申请日：2019-05-28
发明人： Xianhe Liu , Ayush Pandey , Zetian Mi
CPC分类号： H01L33/007 , H01L33/0025 , H01L33/06 , H01L33/325
摘要： An epitaxial growth process, referred to as metal-semiconductor junction assisted epitaxy, of ultrawide bandgap aluminum gallium nitride (AlGaN) is disclosed. The epitaxy of AlGaN is performed in metal-rich (e.g., Ga-rich) conditions using plasma-assisted molecular beam epitaxy. The excess Ga layer leads to the formation of a metal-semiconductor junction during the epitaxy of magnesium (Mg)-doped AlGaN, which pins the Fermi level away from the valence band at the growth front. The Fermi level position is decoupled from Mg-dopant incorporation; that is, the surface band bending allows the formation of a nearly n-type growth front despite p-type dopant incorporation. With controlled tuning of the Fermi level by an in-situ metal-semiconductor junction during epitaxy, efficient p-type conduction can be achieved for large bandgap AlGaN.
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公开(公告)号：US20230357939A1
公开(公告)日：2023-11-09
申请号：US18026452
申请日：2021-09-15
发明人： Pengfei Ou , Jun Song , Zetian Mi , Baowen Zhou
IPC分类号： C25B11/077 , C25B1/55 , C25B1/04 , C25B9/50 , C25B11/055 , C25B11/087
CPC分类号： C25B11/077 , C25B1/55 , C25B1/04 , C25B9/50 , C25B11/055 , C25B11/087
摘要： An electrode for a reaction in a chemical cell includes a substrate having a surface, an array of nanostructures supported by the substrate and extending outward from the surface of the substrate, each nanostructure of the array of nanostructures having a semiconductor composition, and a catalyst arrangement disposed along each nanostructure of the array of nanostructures, the catalyst arrangement comprising a metal-based catalyst for the reaction in the chemical cell. The semiconductor composition of each nanostructure of the array of nanostructures establishes sites at which the metal-based catalyst is anchored to the nanostructure. The array of nanostructures and the catalyst arrangement are configured such that the metal-based catalyst is distributed along sidewalls of each nanostructure of the array of nanostructures at an atomic scale.
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公开(公告)号：US10727372B2
公开(公告)日：2020-07-28
申请号：US16030855
申请日：2018-07-09
IPC分类号： H01L21/00 , H01L33/32 , H01L33/06 , H01L33/20 , H01L33/00 , H01L27/15 , H01L33/44 , H01L33/42 , H01L33/24 , H01L33/08 , H01L33/18
摘要： A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV)
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公开(公告)号：US20240301573A1
公开(公告)日：2024-09-12
申请号：US18599611
申请日：2024-03-08
发明人： Zetian Mi , Wan Jae Dong
IPC分类号： C25B11/052 , C23C14/18 , C23C14/24 , C25B9/19 , C25B9/50 , C25B11/02 , C25B11/059 , C25B11/091 , C30B23/02 , C30B29/40 , C30B29/60 , C25B3/07 , C25B3/26
CPC分类号： C25B11/052 , C23C14/18 , C23C14/24 , C25B9/19 , C25B9/50 , C25B11/02 , C25B11/059 , C25B11/091 , C30B23/025 , C30B29/406 , C30B29/605 , C25B3/07 , C25B3/26
摘要： A device for catalytic conversion of carbon dioxide (CO2) includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition, and a plurality of nanoparticles disposed over the array of conductive projections, each nanoparticle of the plurality of nanoparticles being configured for the catalytic conversion of carbon dioxide (CO2). Each nanoparticle of the plurality of nanoparticles includes a Group VA element, the Group VA element being a metal or a metalloid.
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公开(公告)号：US20230141370A1
公开(公告)日：2023-05-11
申请号：US17912830
申请日：2021-03-22
发明人： Zetian Mi , David Laleyan , Ping Wang
CPC分类号： H01L21/02631 , C30B23/025 , C30B29/403 , C30B33/02 , H01L21/0242 , H01L21/0254 , H01L21/02667 , H01L21/02381 , H01L21/02546
摘要： A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The anneal is conducted at or above a decomposition temperature for the semiconductor layer.
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公开(公告)号：US11512399B2
公开(公告)日：2022-11-29
申请号：US17116220
申请日：2020-12-09
发明人： Pengfei Ou , Jun Song , Baowen Zhou , Zetian Mi
IPC分类号： C25B3/26 , C25B3/21 , B01J23/72 , B01J23/745 , C25B3/03 , C25B11/053 , B82Y30/00
摘要： An electrode of a chemical cell includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition for reduction of carbon dioxide (CO2) in the chemical cell, and a catalyst arrangement disposed along each conductive projection of the array of conductive projections, the catalyst arrangement including a copper-based catalyst and an iron-based catalyst for the reduction of carbon dioxide (CO2) in the chemical cell.
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公开(公告)号：US20220098740A1
公开(公告)日：2022-03-31
申请号：US17619473
申请日：2020-06-17
发明人： Zetian Mi , Sheng Chu , Pengfei Ou , Jun Song
IPC分类号： C25B11/052 , C23C16/455 , C25B1/23 , C25B1/55 , C25B11/093 , C25B11/02 , C23C16/40
摘要： An electrode of a chemical cell includes a structure having an outer surface, a plurality of catalyst particles distributed across the outer surface of the structure, and a catalyst layer disposed over the plurality of catalyst particles and the outer surface of the structure. Each catalyst particle of the plurality of catalyst particles includes a metal catalyst for reduction of carbon dioxide (CO2) in the chemical cell. The catalyst layer includes an oxide material for the reduction of carbon dioxide (CO2) in the chemical cell.
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