公开(公告)号：US20250149355A1

公开(公告)日：2025-05-08

申请号：US18833079

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Junichi KITANO ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Yoshihiro KONDO

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes a substrate cleaning device; a chip cleaning device; a chip bonding device; a transfer section; a first substrate transfer arm; and a first frame transfer arm. The substrate cleaning device is configured to clean a substrate. The chip cleaning device is configured to clean chips in a state where the chips are attached to a frame via a tape. The chip bonding device is configured to bond the chips to the substrate. The first substrate transfer arm is configured to hold and transfer the substrate. The first frame transfer arm is configured to hold and transfer the frame together with the chips. The first substrate transfer arm transfers the substrate from the substrate cleaning device to the chip bonding device, and the first frame transfer arm transfers the chips together with the frame from the chip cleaning device to the chip bonding device.

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20240128307A1

公开(公告)日：2024-04-18

申请号：US18275908

申请日：2022-01-31

Applicant: Tokyo Electron Limited

Inventor： Rintaro HIGUCHI ,  Mitsunori NAKAMORI ,  Koji KAGAWA ,  Kenji SEKIGUCHI ,  Hajime NAKABAYASHI ,  Syuhei YONEZAWA

IPC: H01G4/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L28/40 ,  C23C16/34 ,  C23C16/403 ,  C23C16/405 ,  C23C16/56

Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

公开(公告)号：US20220068642A1

公开(公告)日：2022-03-03

申请号：US17411089

申请日：2021-08-25

Applicant: Tokyo Electron Limited

Inventor： Koji KAGAWA ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA ,  Yoshihisa MATSUBARA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/324

Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].