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公开(公告)号：US09922896B1
公开(公告)日：2018-03-20
申请号：US15390226
申请日：2016-12-23
IPC分类号： H01L21/4763 , H01L23/31 , H01L23/00 , H01L21/768 , H01L21/78 , H01L21/56 , H01L21/3105 , H01L21/027 , H01L21/288 , H01L23/48 , H01L21/683
CPC分类号： H01L21/6835 , H01L21/288 , H01L21/31058 , H01L21/311 , H01L21/561 , H01L21/568 , H01L21/76834 , H01L21/76885 , H01L21/78 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/20 , H01L24/94 , H01L25/065 , H01L2221/68359 , H01L2224/0231 , H01L2224/0237 , H01L2224/0391 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/014 , H01L2924/05042 , H01L2924/05442
摘要： A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.
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公开(公告)号：US20170323840A1
公开(公告)日：2017-11-09
申请号：US15254472
申请日：2016-09-01
发明人： Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
IPC分类号： H01L23/31 , H01L21/56 , H01L21/3105 , H01L21/78 , H01L23/48 , H01L23/00 , H01L21/768
CPC分类号： H01L23/3107 , H01L21/31053 , H01L21/561 , H01L21/568 , H01L21/76895 , H01L21/78 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L24/05 , H01L24/19 , H01L24/97 , H01L25/105 , H01L2224/04105 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/92125 , H01L2224/94 , H01L2225/1035 , H01L2225/1058 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/1032 , H01L2924/14 , H01L2924/1431 , H01L2924/1432 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19102 , H01L2224/214
摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
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公开(公告)号：US20190267274A1
公开(公告)日：2019-08-29
申请号：US16410183
申请日：2019-05-13
IPC分类号： H01L21/683 , H01L23/00 , H01L21/56 , H01L21/3105 , H01L21/311 , H01L21/768 , H01L21/288 , H01L23/48 , H01L21/78 , H01L23/31
摘要： A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.
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公开(公告)号：US20190122948A1
公开(公告)日：2019-04-25
申请号：US16223783
申请日：2018-12-18
发明人： Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
IPC分类号： H01L23/31 , H01L23/00 , H01L21/78 , H01L21/56 , H01L21/3105 , H01L21/768 , H01L23/48
摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
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公开(公告)号：US20180082988A1
公开(公告)日：2018-03-22
申请号：US15366996
申请日：2016-12-01
IPC分类号： H01L25/10 , H01L21/48 , H01L21/683 , H01L21/56 , H01L21/78 , H01L25/065 , H01L25/00 , H01L25/16
CPC分类号： H01L25/105 , H01L21/486 , H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/49811 , H01L23/49816 , H01L23/5383 , H01L23/5384 , H01L23/5389 , H01L25/0652 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L2221/68331 , H01L2221/68359 , H01L2224/48091 , H01L2224/97 , H01L2225/0651 , H01L2225/0652 , H01L2225/06524 , H01L2225/06548 , H01L2225/06555 , H01L2225/06572 , H01L2225/1041 , H01L2225/1058 , H01L2225/1076 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.
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公开(公告)号：US10734299B2
公开(公告)日：2020-08-04
申请号：US16223783
申请日：2018-12-18
发明人： Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
IPC分类号： H01L21/46 , H01L23/31 , H01L21/78 , H01L23/48 , H01L21/56 , H01L21/3105 , H01L21/768 , H01L23/00 , H01L25/10
摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
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公开(公告)号：US10163745B2
公开(公告)日：2018-12-25
申请号：US15924916
申请日：2018-03-19
发明人： Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
IPC分类号： H01L21/50 , H01L23/31 , H01L21/78 , H01L23/48 , H01L21/56 , H01L21/3105 , H01L21/768 , H01L23/00 , H01L25/10
摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
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公开(公告)号：US10950478B2
公开(公告)日：2021-03-16
申请号：US16410183
申请日：2019-05-13
IPC分类号： H01L21/4763 , H01L21/683 , H01L23/00 , H01L21/78 , H01L21/56 , H01L23/31 , H01L21/3105 , H01L21/311 , H01L21/288 , H01L21/768 , H01L23/48 , H01L25/065
摘要： A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.
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公开(公告)号：US10290530B2
公开(公告)日：2019-05-14
申请号：US15894523
申请日：2018-02-12
IPC分类号： H01L23/52 , H01L21/683 , H01L23/00 , H01L21/768 , H01L21/78 , H01L21/56 , H01L21/288 , H01L23/48 , H01L23/31 , H01L21/3105 , H01L21/311 , H01L25/065
摘要： A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.
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公开(公告)号：US20180204780A1
公开(公告)日：2018-07-19
申请号：US15924916
申请日：2018-03-19
发明人： Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
IPC分类号： H01L23/31 , H01L21/56 , H01L21/768 , H01L21/78 , H01L23/48 , H01L23/00 , H01L21/3105
CPC分类号： H01L23/3107 , H01L21/31053 , H01L21/561 , H01L21/568 , H01L21/76895 , H01L21/78 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L24/05 , H01L24/19 , H01L24/97 , H01L25/105 , H01L2224/04105 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/92125 , H01L2224/94 , H01L2225/1035 , H01L2225/1058 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/1032 , H01L2924/14 , H01L2924/1431 , H01L2924/1432 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19102 , H01L2224/214
摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
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