公开(公告)号：US11901303B2

公开(公告)日：2024-02-13

申请号：US17872002

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Ching-Fu Chang ,  Hsin-Chieh Huang

IPC分类号： H01L23/538 ,  H01L23/66 ,  H01L49/02 ,  H01L23/31 ,  H01L21/683 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L27/146 ,  H01L23/522 ,  H01L25/00 ,  H01L25/16

CPC分类号： H01L23/5389 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/66 ,  H01L28/10 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5225 ,  H01L24/20 ,  H01L24/96 ,  H01L25/162 ,  H01L25/50 ,  H01L27/14618 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2224/023 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/97

摘要： An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an antenna region. The insulating encapsulation encapsulates the integrated circuit. The redistribution circuit structure is disposed on the integrated circuit and the insulating encapsulation. The redistribution circuit structure is electrically connected to the integrated circuit, and the redistribution circuit structure includes a redistribution region and a dummy region including a plurality of dummy patterns embedded therein, wherein the antenna region includes an inductor and a wiring-free dielectric portion, and the wiring-free dielectric portion of the antenna region is between the inductor and the dummy region.

公开(公告)号：US20220359407A1

公开(公告)日：2022-11-10

申请号：US17872002

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Ching-Fu Chang ,  Hsin-Chieh Huang

IPC分类号： H01L23/538 ,  H01L23/31 ,  H01L21/683 ,  H01L49/02 ,  H01L23/66

摘要： An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an antenna region. The insulating encapsulation encapsulates the integrated circuit. The redistribution circuit structure is disposed on the integrated circuit and the insulating encapsulation. The redistribution circuit structure is electrically connected to the integrated circuit, and the redistribution circuit structure includes a redistribution region and a dummy region including a plurality of dummy patterns embedded therein, wherein the antenna region includes an inductor and a wiring-free dielectric portion, and the wiring-free dielectric portion of the antenna region is between the inductor and the dummy region.

公开(公告)号：US20190122948A1

公开(公告)日：2019-04-25

申请号：US16223783

申请日：2018-12-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Hsin-Chieh Huang ,  Ching Fu Chang

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/48

摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.

公开(公告)号：US10068844B2

公开(公告)日：2018-09-04

申请号：US14871593

申请日：2015-09-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Hsien-Wei Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L23/522 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/528 ,  H01L25/065 ,  H01L23/538 ,  H01L23/498

摘要： A semiconductor device includes a molding compound and a through via extending through the molding compound. A via connection is disposed over the through via and a cap is disposed over the via connection. A plurality of holes are formed in a section of the cap.

公开(公告)号：US20170005054A1

公开(公告)日：2017-01-05

申请号：US14755889

申请日：2015-06-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Chia Chiu ,  Ming-Yen Chiu

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/538 ,  H01L23/528

CPC分类号： H01L24/14 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/08 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/18162

摘要： The semiconductor device includes a die that contains a substrate and a bond pad. A connective layer is disposed over the die. The connective layer includes a supporting pad and a conductive channel. A portion of the conductive channel passes at least partially through the supporting pad. At least one dielectric region is interposed between the supporting pad and the portion of the conductive channel.

摘要翻译： 半导体器件包括包含衬底和接合焊盘的管芯。 连接层设置在模具上。 连接层包括支撑垫和导电通道。 导电通道的一部分至少部分地穿过支撑垫。 在支撑垫和导电通道的部分之间插入至少一个电介质区域。

公开(公告)号：US20160358894A1

公开(公告)日：2016-12-08

申请号：US15243694

申请日：2016-08-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Der-Chyang Yeh ,  Hsien-Wei Chen ,  Cheng-Chieh Hsieh ,  Ming-Yen Chiu

IPC分类号： H01L25/065 ,  H01L23/367 ,  H01L23/31

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/3675 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012

摘要： A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

摘要翻译： 第一封装通过第一外部连接和第二外部连接与第一基板结合。 使用与第一外部连接不同的材料形成第二外部连接，以便提供来自第一包装的热路径。 在特定实施例中，第一外部连接是焊球，第二外部连接是铜块。

公开(公告)号：US20160079171A1

公开(公告)日：2016-03-17

申请号：US14949006

申请日：2015-11-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Der-Chyang Yeh ,  Hsien-Wei Chen ,  Ming-Yen Chiu ,  Ying-Ju Chen

IPC分类号： H01L23/538 ,  H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/13 ,  H01L25/065 ,  H01L23/31

CPC分类号： H01L25/0657 ,  H01L21/565 ,  H01L23/12 ,  H01L23/13 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/50 ,  H01L23/538 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/27 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/2518 ,  H01L2224/27015 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32258 ,  H01L2224/32502 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a package substrate bonded to a first side of the first package with by a first set of connectors. The semiconductor package further includes a surface mount device mounted to the first side of the first package, the surface mount device consisting essentially of one or more passive devices.

公开(公告)号：US20220278050A1

公开(公告)日：2022-09-01

申请号：US17749125

申请日：2022-05-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Ching-Fu Chang ,  Hsin-Chieh Huang

IPC分类号： H01L23/538 ,  H01L49/02 ,  H01L23/66 ,  H01L23/31 ,  H01L21/683

摘要： An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an antenna region. The insulating encapsulation encapsulates the integrated circuit. The redistribution circuit structure is disposed on the integrated circuit and the insulating encapsulation. The redistribution circuit structure is electrically connected to the integrated circuit, and the redistribution circuit structure includes a redistribution region and a dummy region including a plurality of dummy patterns embedded therein, wherein the antenna region includes an inductor and a wiring-free dielectric portion, and the wiring-free dielectric portion of the antenna region is between the inductor and the dummy region.

公开(公告)号：US10734299B2

公开(公告)日：2020-08-04

申请号：US16223783

申请日：2018-12-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Hsin-Chieh Huang ,  Ching Fu Chang

IPC分类号： H01L21/46 ,  H01L23/31 ,  H01L21/78 ,  H01L23/48 ,  H01L21/56 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/00 ,  H01L25/10

摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.

公开(公告)号：US10163745B2

公开(公告)日：2018-12-25

申请号：US15924916

申请日：2018-03-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming-Yen Chiu ,  Hsin-Chieh Huang ,  Ching Fu Chang

IPC分类号： H01L21/50 ,  H01L23/31 ,  H01L21/78 ,  H01L23/48 ,  H01L21/56 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/00 ,  H01L25/10

摘要： A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.