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    PACKAGE STRUCTURE HAVING TRENCH CAPACITOR
    2.
    发明申请
    PACKAGE STRUCTURE HAVING TRENCH CAPACITOR 有权

    公开(公告)号：US20230010825A1

    公开(公告)日：2023-01-12

    申请号：US17862267

    申请日：2022-07-11

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Fu-Chiang Kuo ,  Jen-Yuan Chang

    IPC分类号： H01L23/64 ,  H01L25/065 ,  H01L23/498

    摘要： A semiconductor structure comprises a semiconductor substrate, a first trench capacitor, and a second trench capacitor. The substrate has first trenches arranged in a first arrangement direction with each first trench extending in a first extension direction and second trenches arranged in a second arrangement direction with each second trench extending in a second extension direction. The first trench capacitor includes first capacitor segments disposed inside the first trenches. The second trench capacitor includes second capacitor segments disposed inside the second trenches. One first capacitor segment of the first capacitor segments has an extending length different from that of another first capacitor segment of the first capacitor segments, and one second capacitor segment of the second capacitor segments has an extending length different from that of another second capacitor segment of the second capacitor segments.

    Semiconductor Structures And Methods Of Forming The Same
    4.
    发明公开
    Semiconductor Structures And Methods Of Forming The Same 审中-公开

    公开(公告)号：US20240105707A1

    公开(公告)日：2024-03-28

    申请号：US18188294

    申请日：2023-03-22

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Fu-Chiang Kuo ,  Meei-Shiou Chern ,  Jyun-Ting Hou

    IPC分类号： H01L27/01 ,  H01L21/762 ,  H01L21/84

    CPC分类号： H01L27/016 ,  H01L21/76283 ,  H01L21/84

    摘要： Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a trench extending into a substrate, in a top view, the trench extends lengthwise along a first direction, forming a material layer over the substrate and intersecting a first portion of the trench, after the forming of material layer, forming a first capacitor intersecting a second portion of the trench, the first capacitor comprising a first plurality of conductor plates, and forming a second capacitor intersecting a third portion of the trench, the second capacitor comprising a second plurality of conductor plates, where the first plurality of conductor plates and the second plurality of conductor plates are in direct contact with the material layer.

    CAPACITANCE STRUCTURE
    5.
    发明公开
    CAPACITANCE STRUCTURE 审中-公开

    公开(公告)号：US20240088207A1

    公开(公告)日：2024-03-14

    申请号：US18510787

    申请日：2023-11-16

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Fu-Chiang Kuo

    IPC分类号： H01G4/08

    CPC分类号： H01L28/75 ,  H01L28/91 ,  H01L28/92 ,  H10B12/37

    摘要： A capacitance structure comprises a metal nitride layer, such as a titanium nitride (TiN) layer, a compositionally graded film formed on a surface of the metal nitride layer by thermal oxidation, and a dielectric layer disposed on the compositionally graded film. A method of manufacturing a capacitance structure includes forming a conductive layer, performing thermal oxidation of a surface of the conductive layer to produce a compositionally graded film on the conductive layer, and forming a dielectric layer on the compositionally graded film.

    CONTACT ARRANGEMENTS FOR DEEP TRENCH CAPACITORS
    6.
    发明公开
    CONTACT ARRANGEMENTS FOR DEEP TRENCH CAPACITORS 审中-公开

    公开(公告)号：US20230369213A1

    公开(公告)日：2023-11-16

    申请号：US18169600

    申请日：2023-02-15

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Fu-Chiang Kuo ,  Meei-Shiou Chern ,  Jyun-Ting Hou

    IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L29/94

    CPC分类号： H01L23/5283 ,  H01L23/5226 ,  H01L21/76877 ,  H01L21/76898 ,  H01L29/945

    摘要： A semiconductor device includes a substrate including a first trench that extends along a first lateral direction and a second trench that extends along a second lateral direction; a first metal layer filling each of the first and second trenches; a second metal layer filling each of the first and second trenches, and disposed above and electrically isolated from the first metal layer; a first via structure in electrical contact with first metal layer; and a second via structure in electrical contact with second metal layer. When viewed from the top, the first via structure and the second via structure are interposed between the first trench and the second trench along the first lateral direction. The first via structure and the second via structure are disposed immediately adjacent to each other along the second lateral direction.

    Semiconductor trench capacitor structure and manufacturing method thereof
    7.
    发明授权
    Semiconductor trench capacitor structure and manufacturing method thereof 有权

    公开(公告)号：US11817510B2

    公开(公告)日：2023-11-14

    申请号：US17461734

    申请日：2021-08-30

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Fu-Chiang Kuo

    IPC分类号： H01L29/94 ,  H01L21/762 ,  H01L29/66

    CPC分类号： H01L29/945 ,  H01L21/76229 ,  H01L28/40 ,  H01L28/75 ,  H01L28/91 ,  H01L29/66181

    摘要： A semiconductor trench capacitor structure is provided. The semiconductor trench capacitor comprises a semiconductor substrate; a trench capacitor overlying the semiconductor substrate, wherein the trench capacitor comprises a plurality of trench electrodes and a plurality of capacitor dielectric layers that are alternatingly stacked over the semiconductor substrate and defines a plurality of trench segments and a plurality of pillar segments, wherein the trench electrodes and the capacitor dielectric layers are recessed into the semiconductor substrate at the trench segments, and wherein the trench segments are separated from each other by the pillar segments; and a protection dielectric layer disposed between the semiconductor substrate and the trench capacitor, wherein the protection dielectric layer has a thickness greater than thicknesses of the trench electrodes.

    DEEP TRENCH CAPACITOR (DTC) REGION IN SEMICONDUCTOR PACKAGE
    10.
    发明公开
    DEEP TRENCH CAPACITOR (DTC) REGION IN SEMICONDUCTOR PACKAGE 审中-公开

    公开(公告)号：US20230307389A1

    公开(公告)日：2023-09-28

    申请号：US17701580

    申请日：2022-03-22

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Fu-Chiang Kuo

    IPC分类号： H01L23/64 ,  H01L25/18 ,  H01L23/538 ,  H01L21/48

    CPC分类号： H01L23/642 ,  H01L25/18 ,  H01L23/5383 ,  H01L21/4857 ,  H01L2223/6666

    摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate and a deep trench capacitor (DTC) region formed in the substrate. The DTC region includes a plurality of DTC units, and each DTC unit includes: a trench extending downwardly from a top surface of the substrate; a first conductive layer disposed in the trench; a second conductive layer disposed in the trench; and a dielectric layer sandwiched by the first conductive layer and the second conductive layer. Each DTC unit is elongated, and a first group of the plurality of DTC units extend horizontally in a first direction, whereas a second group of the plurality of the DTC units extend horizontally in a second direction.