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公开(公告)号：US10276678B2
公开(公告)日：2019-04-30
申请号：US15693849
申请日：2017-09-01
发明人： Chun-Han Tsao , Chih-Ming Chen , Han-Yu Chen , Szu-Yu Wang , Lan-Lin Chao , Cheng-Yuan Tsai
IPC分类号： H01L29/76 , H01L29/94 , H01L29/423 , H01L29/66 , H01L21/28 , H01L21/285 , H01L21/02 , H01L21/768 , H01L27/11568 , H01L27/11573 , H01L49/02
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
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公开(公告)号：US20160204154A1
公开(公告)日：2016-07-14
申请号：US15076115
申请日：2016-03-21
发明人： Shih Pei Chou , Hung-Wen Hsu , Ching-Chung Su , Chun-Han Tsao , Chia-Chieh Lin , Shu-Ting Tsai , Jiech-Fun Lu , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L21/6835 , H01L21/6836 , H01L21/76805 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L27/14636 , H01L27/1464 , H01L2225/06544 , H01L2924/0002 , H01L2924/10253 , H01L2924/00
摘要： An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.
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公开(公告)号：US09754827B1
公开(公告)日：2017-09-05
申请号：US15142775
申请日：2016-04-29
发明人： Chun-Han Tsao , Chih-Ming Chen , Han-Yu Chen , Szu-Yu Wang , Lan-Lin Chao , Cheng-Yuan Tsai
IPC分类号： H01L29/76 , H01L29/94 , H01L21/768 , H01L29/66 , H01L21/28 , H01L21/285 , H01L21/02 , H01L23/532 , H01L23/535 , H01L27/11568 , H01L27/11573 , H01L29/423
CPC分类号： H01L29/42344 , H01L21/02063 , H01L21/28052 , H01L21/28518 , H01L21/76834 , H01L27/11568 , H01L27/11573 , H01L28/00 , H01L29/665
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
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公开(公告)号：US20150069619A1
公开(公告)日：2015-03-12
申请号：US14020370
申请日：2013-09-06
发明人： Shih Pei Chou , Hung-Wen Hsu , Ching-Chung Su , Chun-Han Tsao , Lin Chia-Chieh , Shu-Ting Tsai , Jiech-Fun Lu , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L23/48 , H01L25/065 , H01L25/00
CPC分类号： H01L27/14634 , H01L21/6835 , H01L21/6836 , H01L21/76805 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L27/14636 , H01L27/1464 , H01L2225/06544 , H01L2924/0002 , H01L2924/10253 , H01L2924/00
摘要： An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.
摘要翻译： 提供了互连装置和形成互连装置的方法。 诸如晶片，管芯或晶片和管芯之类的两个基片结合在一起。 第一掩模用于形成部分延伸到在第一晶片上形成的互连的第一开口。 形成电介质衬垫，然后使用相同的掩模进行另一蚀刻工艺。 蚀刻工艺继续暴露形成在第一衬底和第二衬底上的互连。 开口填充有导电材料以形成导电塞。
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公开(公告)号：US11276587B2
公开(公告)日：2022-03-15
申请号：US16688608
申请日：2019-11-19
发明人： Chih-Hui Huang , Chun-Han Tsao , Sheng-Chau Chen , Yeur-Luen Tu , Chia-Shiung Tsai , Xiaomeng Chen
IPC分类号： H01L21/67 , H01L21/18 , H01L21/762 , H01L21/683 , H01L21/687 , H01L21/66
摘要： An apparatus for and a method of bonding a first substrate and a second substrate are provided. In an embodiment a first wafer chuck has a first curved surface and a second wafer chuck has a second curved surface. A first wafer is placed on the first wafer chuck and a second wafer is placed on a second wafer chuck, such that both the first wafer and the second wafer are pre-warped prior to bonding. Once the first wafer and the second wafer have been pre-warped, the first wafer and the second wafer are bonded together.
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公开(公告)号：US09293392B2
公开(公告)日：2016-03-22
申请号：US14020370
申请日：2013-09-06
发明人： Shih Pei Chou , Hung-Wen Hsu , Ching-Chung Su , Chun-Han Tsao , Lin Chia-Chieh , Shu-Ting Tsai , Jiech-Fun Lu , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L23/48 , H01L25/065 , H01L25/00 , H01L21/683 , H01L25/16
CPC分类号： H01L27/14634 , H01L21/6835 , H01L21/6836 , H01L21/76805 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L27/14636 , H01L27/1464 , H01L2225/06544 , H01L2924/0002 , H01L2924/10253 , H01L2924/00
摘要： An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.
摘要翻译： 提供了互连装置和形成互连装置的方法。 诸如晶片，管芯或晶片和管芯之类的两个基片结合在一起。 第一掩模用于形成部分地延伸到在第一晶片上形成的互连的第一开口。 形成电介质衬垫，然后使用相同的掩模进行另一蚀刻工艺。 蚀刻工艺继续暴露形成在第一衬底和第二衬底上的互连。 开口填充有导电材料以形成导电塞。
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公开(公告)号：US09252296B2
公开(公告)日：2016-02-02
申请号：US14713559
申请日：2015-05-15
发明人： Chun-Han Tsao , Chih-Yu Lai , Chih-Hui Huang , Cheng-Ta Wu , Yeur-Luen Tu , Ching-Chun Wang , Shyh-Fann Ting , Chia-Shiung Tsai
IPC分类号： H01L31/102 , H01L21/00 , H01L31/0216 , H01L51/42 , H01L27/146 , H01L27/148
CPC分类号： H01L31/02164 , H01L27/14623 , H01L27/14632 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/148 , H01L51/4273
摘要： A semiconductor device includes a substrate having a first side and a second side opposite the first side. The substrate has a sensor region proximate the first side. The semiconductor device also includes a first compressive layer over the second side of the substrate. The semiconductor device further includes a light blocking element over the first compressive layer. The semiconductor device additionally includes a second compressive layer over the first compressive layer and covering a portion of the light blocking element. The semiconductor device also includes a third compressive layer between the second compressive layer and the portion of the light blocking element.
摘要翻译： 半导体器件包括具有第一侧和与第一侧相对的第二侧的衬底。 衬底具有靠近第一侧的传感器区域。 半导体器件还包括在衬底的第二侧上的第一压缩层。 半导体器件还包括在第一压缩层上的遮光元件。 半导体器件还包括在第一压缩层上的第二压缩层并覆盖遮光元件的一部分。 半导体器件还包括在第二压缩层和遮光元件的部分之间的第三压缩层。
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公开(公告)号：US11735635B2
公开(公告)日：2023-08-22
申请号：US17305971
申请日：2021-07-19
发明人： Chun-Han Tsao , Chih-Ming Chen , Han-Yu Chen , Szu-Yu Wang , Lan-Lin Chao , Cheng-Yuan Tsai
IPC分类号： H01L29/94 , H01L29/76 , H01L31/119 , H01L29/423 , H01L29/66 , H01L21/28 , H01L21/285 , H01L21/768 , H01L49/02 , H01L21/02 , H10B43/30 , H10B43/40
CPC分类号： H01L29/42344 , H01L21/02063 , H01L21/02068 , H01L21/28052 , H01L21/28518 , H01L21/76834 , H01L21/76856 , H01L28/00 , H01L29/665 , H10B43/30 , H10B43/40
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
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公开(公告)号：US20210343849A1
公开(公告)日：2021-11-04
申请号：US17305971
申请日：2021-07-19
发明人： Chun-Han Tsao , Chih-Ming Chen , Han-Yu Chen , Szu-Yu Wang , Lan-Lin Chao , Cheng-Yuan Tsai
IPC分类号： H01L29/423 , H01L29/66 , H01L21/28 , H01L21/285 , H01L21/768 , H01L27/11568 , H01L27/11573 , H01L49/02 , H01L21/02
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
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公开(公告)号：US11069785B2
公开(公告)日：2021-07-20
申请号：US16396621
申请日：2019-04-26
发明人： Chun-Han Tsao , Chih-Ming Chen , Han-Yu Chen , Szu-Yu Wang , Lan-Lin Chao , Cheng-Yuan Tsai
IPC分类号： H01L29/76 , H01L29/94 , H01L29/423 , H01L29/66 , H01L21/28 , H01L21/285 , H01L21/768 , H01L27/11568 , H01L27/11573 , H01L49/02 , H01L21/02
摘要： A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
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