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公开(公告)号：US20100320542A1
公开(公告)日：2010-12-23
申请号：US12782457
申请日：2010-05-18
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L27/092
摘要： To improve the performance of a CMISFET having a high-k gate insulating film and a metal gate electrode. An n-channel MISFET has, over the surface of a p-type well of a semiconductor substrate, a gate electrode formed via a first Hf-containing insulating film serving as a gate insulating film, while a p-channel MISFET has, over the surface of an n-type well, another gate electrode formed via a second Hf-containing insulating film serving as a gate insulating film. These gate electrodes have a stack structure of a metal film and a silicon film thereover. The first Hf-containing insulating film is an insulating material film comprised of Hf, a rare earth element, Si, O, and N or comprised of Hf, a rare earth element, Si, and O, while the second Hf-containing insulating film is an insulating material film comprised of Hf, Al, O, and N or comprised of Hf, Al, and O.
摘要翻译： 为了提高具有高k栅极绝缘膜和金属栅电极的CMISFET的性能。 n沟道MISFET在半导体衬底的p型阱的表面上具有通过用作栅极绝缘膜的第一Hf绝缘膜形成的栅电极，而p沟道MISFET具有 n型阱的表面，通过用作栅极绝缘膜的第二Hf含量绝缘膜形成的另一个栅电极。 这些栅电极具有金属膜和其上的硅膜的堆叠结构。 第一含Hf绝缘膜是包括Hf，稀土元素，Si，O和N或由Hf，稀土元素，Si和O构成的绝缘材料膜，而第二Hf含量绝缘膜 是由Hf，Al，O和N组成或由Hf，Al和O构成的绝缘材料膜。
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公开(公告)号：US20100279496A1
公开(公告)日：2010-11-04
申请号：US12755058
申请日：2010-04-06
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857
摘要： To improve productivity and performance of a CMISFET including a high-dielectric-constant gate insulating film and a metal gate electrode. An Hf-containing insulating film for a gate insulating film is formed over the main surface of a semiconductor substrate. A metal nitride film is formed on the insulating film. The metal nitride film in an nMIS formation region where an n-channel MISFET is to be formed is selectively removed by wet etching using a photoresist pattern on the metal nitride films a mask. Then, a threshold adjustment film containing a rare-earth element is formed. The Hf-containing insulating film in the nMIS formation region reacts with the threshold adjustment film by heat treatment. The Hf-containing insulating film in a pMIS formation region where a p-channel MISFET is to be formed does not react with the threshold adjustment film because of the existence of the metal nitride film. Then, after removing the unreacted threshold adjustment film and the metal nitride film, metal gate electrodes are formed in the nMIS formation region and the pMIS formation region.
摘要翻译： 提高包括高介电常数栅极绝缘膜和金属栅电极在内的CMISFET的生产率和性能。 在半导体衬底的主表面上形成用于栅极绝缘膜的含Hf绝缘膜。 在绝缘膜上形成金属氮化物膜。 通过在金属氮化物膜上使用光刻胶图案的掩模，通过湿式蚀刻选择性地去除要形成n沟道MISFET的nMIS形成区域中的金属氮化物膜。 然后，形成含有稀土元素的阈值调节膜。 nMIS形成区域中的含Hf绝缘膜通过热处理与阈值调节膜反应。 由于存在金属氮化物膜，所以要形成p沟道MISFET的pMIS形成区域中的含Hf绝缘膜不会与阈值调节膜反应。 然后，在除去未反应的阈值调整膜和金属氮化物膜之后，在nMIS形成区域和pMIS形成区域中形成金属栅电极。
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公开(公告)号：US07268047B2
公开(公告)日：2007-09-11
申请号：US11357072
申请日：2006-02-21
IPC分类号： H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。
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公开(公告)号：US20060138572A1
公开(公告)日：2006-06-29
申请号：US11357072
申请日：2006-02-21
IPC分类号： H01L21/8238
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜含有过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。 此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小 从这些界面，并成为高k电影中心部分中最低的。
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公开(公告)号：US6110283A
公开(公告)日：2000-08-29
申请号：US912938
申请日：1997-08-15
IPC分类号： C23C16/40 , C23C16/44 , C23C16/448 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/448
摘要： A chemical vapor deposition apparatus to reduce generation of contaminants such as residues within the apparatus can be obtained. The chemical vapor deposition apparatus includes a CVD source container, a vaporizer and reaction unit. The vaporizer has a nozzle attached thereto. The nozzle has a tip portion and a thick portion. The reaction unit includes a mixing unit. The mixing unit includes an oxidizer supply pipe as well as a heating portion having a helical side groove and heating means. Reaction unit further includes a reaction chamber surrounded by a wall surface. The inside of the wall surface is covered with an inactive cover layer, and the wall surface is heated to a temperature range of 300-500.degree. C.
摘要翻译： 可以获得化学气相沉积装置，以减少装置内残留物等杂质的产生。 化学气相沉积装置包括CVD源容器，蒸发器和反应单元。 蒸发器具有附接到其上的喷嘴。 喷嘴具有尖端部分和较厚部分。 反应单元包括混合单元。 混合单元包括氧化剂供应管以及具有螺旋侧槽和加热装置的加热部分。 反应单元还包括由壁表面包围的反应室。 壁面内侧覆盖有不活泼的覆盖层，壁面被加热至300-500℃的温度范围。
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公开(公告)号：US5760366A
公开(公告)日：1998-06-02
申请号：US699707
申请日：1996-08-07
申请人： Kenyu Haruta , Koichi Ono , Mutsumi Tsuda , Takaaki Kawahara , Taisuke Furukawa
发明人： Kenyu Haruta , Koichi Ono , Mutsumi Tsuda , Takaaki Kawahara , Taisuke Furukawa
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/28 , C23C14/34 , C23C14/54 , C23C14/56 , B23K26/00 , C23C14/35
CPC分类号： C23C14/087 , C23C14/022 , C23C14/22 , C23C14/28 , C23C14/3471 , C23C14/54 , C23C14/541 , C23C14/547 , C23C14/564 , Y10S505/732
摘要： A thin film forming apparatus using a laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting a laser beam to target 5, and a substrate holder (3). When the target is irradiated with a laser beam, a plume (15) is generated, and materials included in plume 15 are deposited on the surface of a substrate (2) held by the substrate holder (3). A magnetic field is generated to direct the plume. The magnetic field can be parallel to the surface of the substrate or in another embodiment a cusp magnetic field can be used (see FIG. 130).
摘要翻译： 使用激光器的薄膜形成装置包括：室（1），放置在其中的靶（5），用于向目标5发射激光的激光源（10）和基板保持器（3）。 当用激光束照射靶时，产生羽流（15），并且包含在羽流15中的材料沉积在由基板保持器（3）保持的基板（2）的表面上。 产生磁场以引导羽流。 磁场可以平行于衬底的表面，或者在另一个实施例中，可以使用尖点磁场（参见图130）。
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公开(公告)号：US06984565B2
公开(公告)日：2006-01-10
申请号：US10917288
申请日：2004-08-13
申请人： Takaaki Kawahara
发明人： Takaaki Kawahara
IPC分类号： H01L21/336
CPC分类号： H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31612 , H01L21/31645 , H01L28/56 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A first insulating film is formed on a base substrate, then a second insulating film is formed on the first insulating film, the second insulating film having a relative permittivity higher than that of the first insulating film. A gate electrode is formed on the second insulating film. The second insulating film forming includes first to sixth steps, and a cycle consisting of the first to sixth steps is repeated.
摘要翻译： 在基底基板上形成第一绝缘膜，然后在第一绝缘膜上形成第二绝缘膜，第二绝缘膜的相对介电常数高于第一绝缘膜。 栅电极形成在第二绝缘膜上。 第二绝缘膜形成包括第一至第六步骤，并且重复由第一至第六步骤组成的循环。
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公开(公告)号：US20050045970A1
公开(公告)日：2005-03-03
申请号：US10913551
申请日：2004-08-09
IPC分类号： C23C16/42 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译： 硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。 高k膜包含过渡金属，铝，硅和氧。 高k膜中的硅的浓度高于与SiO 2膜的界面附近和与栅电极的界面附近的过渡金属和铝的浓度。 此外，优选的是，至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着与这些界面的距离而逐渐减小，并且变得最低 在高k电影的中心部分。
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9.发明授权Vaporizing device for CVD source materials and CVD apparatus employing the same 有权用于CVD源材料的气化装置和采用其的CVD装置公开(公告)号：US06273957B1
公开(公告)日：2001-08-14
申请号：US09532446
申请日：2000-03-23
申请人： Mikio Yamamuka , Tsuyoshi Horikawa , Takaaki Kawahara , Fusaoki Uchikawa , Shigeru Matsuno , Takehiko Sato , Akira Yamada , Masayoshi Tarutani
发明人： Mikio Yamamuka , Tsuyoshi Horikawa , Takaaki Kawahara , Fusaoki Uchikawa , Shigeru Matsuno , Takehiko Sato , Akira Yamada , Masayoshi Tarutani
IPC分类号： C23C1600
CPC分类号： C23C16/4486
摘要： A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.
摘要翻译： 用于化学气相沉积（CVD）源材料的蒸发装置包括用于通过加热蒸发引入的CVD源材料的蒸发器，将其端部固定地附接到蒸发器的喷嘴，用于将CVD源材料喷射到蒸发器中， 用于冷却喷嘴的机构，以及附接到端部附近的端部部分或蒸发器的导热限制器。 不蒸发残留物和颗粒的产生减少，由于设备的连续操作时间的延长以及膜缺陷的减少而提高了生产率。
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公开(公告)号：US6165556A
公开(公告)日：2000-12-26
申请号：US435492
申请日：1999-11-08
申请人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
发明人： Takaaki Kawahara , Mikio Yamamuka , Tetsuro Makita , Tsuyoshi Horikawa , Akimasa Yuuki , Teruo Shibano
IPC分类号： C23C16/40 , C23C16/44 , C23C16/448 , C23C16/52 , C23C16/56 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L28/56 , C23C16/409 , C23C16/4481 , C23C16/4485 , C23C16/52 , C23C16/56 , H01L21/31691 , H01L28/55 , Y10S427/101
摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.
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