利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

155 条记录 (耗时 0.07 秒)

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06166992A

    公开(公告)日：2000-12-26

    申请号：US517338

    申请日：2000-03-02

    申请人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    发明人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    IPC分类号： G06F1/04 ,  G11C7/22 ,  H01L27/02 ,  H03K3/356 ,  H03K5/13 ,  H03K5/1534 ,  H03K5/24 ,  G11C8/00

    CPC分类号： G06F1/04 ,  G11C7/22 ,  G11C7/222 ,  H03K3/356113 ,  H03K3/356156 ,  H03K5/133 ,  H03K5/1534 ,  H03K5/249

    摘要： A semiconductor device includes a one-shot pulse generating circuit that generates a one-shot pulse having a predetermined pulse width at a rise or fall timing of a first clock signal, a cycle time measuring circuit that measures a cycle-time of the first clock signal from the one-shot pulse output from the one-shot pulse generating circuit, an internal clock generating circuit that generates a second clock signal based on the cycle time measured by the cycle time measuring circuit and the one-shot pulse output from the one-shot pulse generating circuit. The second clock signal has a cycle time identical to the first clock signal and has a rise or fall timing which is advanced by a specific time than that of the first clock signal, and the specific time is obtained by subtracting the cycle time of the first clock signal from a predetermined time, and a data output circuit that outputs data after a predetermined delay time from the rise or fall timing of the second clock signal.

    摘要翻译： 一种半导体器件包括：单触发脉冲发生电路，其在第一时钟信号的上升或下降定时产生具有预定脉冲宽度的单触发脉冲;周期时间测量电路，其测量第一时钟的周期时间 来自单触发脉冲发生电路输出的单触发脉冲的信号;内部时钟发生电路，其基于由周期时间测量电路测量的周期时间和从一个脉冲发生电路输出的单次脉冲产生第二时钟信号 -shot脉冲发生电路。 第二时钟信号具有与第一时钟信号相同的周期时间，并且具有比第一时钟信号高一个特定时间的上升或下降定时，并且通过减去第一时钟信号的周期时间来获得特定时间 时钟信号;以及数据输出电路，其在从第二时钟信号的上升或下降定时之后的预定延迟时间之后输出数据。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US6009039A

    公开(公告)日：1999-12-28

    申请号：US14976

    申请日：1998-01-28

    申请人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    发明人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    IPC分类号： G06F1/04 ,  G11C7/22 ,  H03K3/356 ,  H03K5/13 ,  H03K5/1534 ,  H03K5/24 ,  G11C8/00 ,  G11C16/04

    CPC分类号： G11C7/222 ,  G06F1/04 ,  G11C7/22 ,  H03K3/356113 ,  H03K3/356156 ,  H03K5/133 ,  H03K5/1534 ,  H03K5/249 ,  G11C7/04

    摘要： A semiconductor device includes a one-shot pulse generating circuit that generates a one-shot pulse having a predetermined pulse width at a rise or fall timing of a first clock signal, a cycle time measuring circuit that measures a cycle time of the first clock signal from the one-shot pulse output from the one-shot pulse generating circuit, an internal clock generating circuit that generates a second clock signal based on the cycle time measured by the cycle time measuring circuit and the one-shot pulse output from the one-shot pulse generating circuit. The second clock signal has a cycle time identical to the first clock signal and has a rise or fall timing which is advanced by a specific time than that of the first clock signal, and the specific time is obtained by subtracting the cycle time of the first clock signal from a predetermined time, and a data output circuit that outputs data after a predetermined delay time from the rise or fall timing of the second clock signal.

    摘要翻译： 一种半导体器件包括：单脉冲发生电路，其在第一时钟信号的上升或下降定时产生具有预定脉冲宽度的单触发脉冲;周期时间测量电路，其测量第一时钟信号的周期时间 根据来自单触发脉冲发生电路的单触发脉冲输出，内部时钟发生电路，其基于由循环时间测量电路测量的周期时间和从单次脉冲发生电路输出的单次脉冲产生第二时钟信号; 射击脉冲发生电路。 第二时钟信号具有与第一时钟信号相同的周期时间，并且具有比第一时钟信号高一个特定时间的上升或下降定时，并且通过减去第一时钟信号的周期时间来获得特定时间 时钟信号;以及数据输出电路，其在从第二时钟信号的上升或下降定时之后的预定延迟时间之后输出数据。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5767712A

    公开(公告)日：1998-06-16

    申请号：US892066

    申请日：1997-07-14

    申请人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    发明人： Yoshihiro Takemae ,  Masao Taguchi ,  Yukinori Kodama ,  Makoto Yanagisawa ,  Takaaki Suzuki ,  Junji Ogawa ,  Atsushi Hatakeyama ,  Hirohiko Mochizuki ,  Hideaki Kawai

    IPC分类号： G06F1/04 ,  G11C7/22 ,  H01L27/02 ,  H03K3/356 ,  H03K5/13 ,  H03K5/1534 ,  H03K5/24 ,  H03L7/00

    CPC分类号： G06F1/04 ,  G11C7/22 ,  G11C7/222 ,  H03K3/356113 ,  H03K3/356156 ,  H03K5/133 ,  H03K5/1534 ,  H03K5/249

    摘要： A semiconductor device includes a one-shot pulse generating circuit that generates a one-shot pulse having a predetermined pulse width at a rise or fall timing of a first clock signal, a cycle time measuring circuit that measures a cycle time of the first clock signal from the one-shot pulse output from the one-shot pulse generating circuit, an internal clock generating circuit that generates a second clock signal based on the cycle time measured by the cycle time measuring circuit and the one-shot pulse output from the one-shot pulse generating circuit. The second clock signal has a cycle time identical to the first clock signal and has rise or fall timing which is advanced by a specific time than that of the first clock signal, and the specific time is obtained by subtracting the cycle time of the first clock signal from a predetermined time, and a data output circuit that outputs data after a predetermined delay time from the rise or fall timing of the second clock signal.

    摘要翻译： 一种半导体器件包括：单脉冲发生电路，其在第一时钟信号的上升或下降定时产生具有预定脉冲宽度的单触发脉冲;周期时间测量电路，其测量第一时钟信号的周期时间 根据来自单触发脉冲发生电路的单触发脉冲输出，内部时钟发生电路，其基于由循环时间测量电路测量的周期时间和从单次脉冲发生电路输出的单次脉冲产生第二时钟信号; 射击脉冲发生电路。 第二时钟信号具有与第一时钟信号相同的周期时间，并且具有比第一时钟信号高一个特定时间的上升或下降定时，并且通过减去第一时钟的周期时间获得特定时间 信号，以及数据输出电路，其在从第二时钟信号的上升或下降定时之后的预定延迟时间之后输出数据。

    Word driver circuit and a memory circuit using the same
    6.
    发明授权
    Word driver circuit and a memory circuit using the same 失效
    字驱动电路和使用其的存储电路

    公开(公告)号：US5640359A

    公开(公告)日：1997-06-17

    申请号：US686385

    申请日：1996-07-25

    申请人： Takaaki Suzuki ,  Yoshihiro Takemae ,  Masao Nakano

    发明人： Takaaki Suzuki ,  Yoshihiro Takemae ,  Masao Nakano

    IPC分类号： G11C11/407 ,  G11C8/08 ,  G11C8/14 ,  G11C11/401 ,  H01L21/8242 ,  H01L27/108 ,  G11C8/00

    CPC分类号： G11C8/14 ,  G11C8/08

    摘要： The present invention relates to a word driver circuit provided in a memory circuit. The word driver circuit comprises a P channel and an N channel transistor having a gate electrode commonly connected and one source or drain electrode commonly connected. The N channeltransistor has another source or drain electrode connected to a ground. A word line is connected to the commonly connected source or drain electrode of the transistors. A first selection signal, generated by decoding a first group of address signals, whose potential is either a first potential by which the N channel transistor is rendered conductive or a second potential lower than the first power supply is supplied to the gate electrodes. And a second selection signal, generated by decoding a second group of address signals, whose potential is either a third potential of the selected word line or a fourth potential equal or lower than the first power supply is supplied to another source or drain of the P transistor.

    摘要翻译： 本发明涉及一种设在存储器电路中的字驱动器电路。 字驱动器电路包括P沟道和N沟道晶体管，其具有共同连接的栅极电极和通常连接的一个源极或漏极电极。 N沟道晶体管具有连接到地的另一个源极或漏极。 字线连接到晶体管的共同连接的源极或漏极。 通过解码第一组地址信号而产生的第一选择信号被提供给栅极电极，该第一组地址信号的电位是N沟道晶体管导通的第一电位或低于第一电源的第二电位。 并且通过解码第二组地址信号而产生的第二选择信号被提供给P的另一个源或漏极，该第二组地址信号的电位是所选字线的第三电位或等于或低于第一电源的第四电位 晶体管。

    Semiconductor integrated circuit memory
    7.
    发明授权
    Semiconductor integrated circuit memory 有权
    半导体集成电路存储器

    公开(公告)号：US06185149B2

    公开(公告)日：2001-02-06

    申请号：US09340147

    申请日：1999-06-28

    申请人： Shinya Fujioka ,  Masao Taguchi ,  Yasuharu Sato ,  Takaaki Suzuki ,  Tadao Aikawa ,  Yasurou Matsuzaki ,  Toshiya Uchida

    发明人： Shinya Fujioka ,  Masao Taguchi ,  Yasuharu Sato ,  Takaaki Suzuki ,  Tadao Aikawa ,  Yasurou Matsuzaki ,  Toshiya Uchida

    IPC分类号： G11C800

    CPC分类号： G11C7/1018 ,  G11C7/1072

    摘要： A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.

    摘要翻译： 半导体存储器包括存储单元块，基于突发长度生成突发长度信息的突发长度信息产生电路，以及接收脉冲串长度信息的块使能电路。 当突发长度等于或小于预定突发长度时，块使能电路选择性地启用存储单元块中的一个，并且当突发长度长于预定突发时，基于脉冲串长度选择性地启用多个存储单元块 长度。 从上述一个或多个存储单元块读取数据。

    Electronic instrument and semiconductor memory device
    9.
    发明授权
    Electronic instrument and semiconductor memory device 有权
    电子仪器和半导体存储器件

    公开(公告)号：US06172938B2

    公开(公告)日：2001-01-09

    申请号：US09338597

    申请日：1999-06-23

    申请人： Takaaki Suzuki ,  Masao Taguchi ,  Kotoku Sato

    发明人： Takaaki Suzuki ,  Masao Taguchi ,  Kotoku Sato

    IPC分类号： G11C800

    CPC分类号： G11C7/1066 ,  G11C7/1072 ,  G11C11/4076

    摘要： An electronic instrument includes a memory device, clock lines through which complementary clock signals are transmitted to be used for synchronization of a data output operation and a data input operation for the memory device, and strobe signal lines through which a first output strobe signal, a second output strobe signal, a first input strobe signal and a second input strobe signal are transmitted to be used to settle output data from the memory device in the data output operation and to settle input data supplied to the memory device, the first and second output strobe signals being in complementary relation to each other, the first and second input strobe signals being in complementary relation to each other.

    摘要翻译： 一种电子仪器，包括：存储器件，传输互补时钟信号的时钟线，用于数据输出操作的同步和存储器件的数据输入操作;以及选通信号线，第一输出选通信号， 发送第二输出选通信号，第一输入选通信号和第二输入选通信号，以在数据输出操作中用于建立来自存储器件的输出数据，并且提供提供给存储器件的输入数据，第一和第二输出 选通信号彼此互补，第一和第二输入选通信号彼此互补。

    Semiconductor memory device having an SRAM and a DRAM on a single chip
    10.
    发明授权
    Semiconductor memory device having an SRAM and a DRAM on a single chip 失效
    在单个芯片上具有SRAM和DRAM的半导体存储器件

    公开(公告)号：US06735141B2

    公开(公告)日：2004-05-11

    申请号：US09917913

    申请日：2001-07-31

    申请人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    发明人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    IPC分类号： G11C700

    CPC分类号： G11C11/005

    摘要： A semiconductor memory device includes an SRAM provided on a chip, the SRAM including an SRAM cell array. A DRAM is provided on the chip, the DRAM including a DRAM cell array. An address input circuit receives an address signal, the address signal having a first portion and a second portion, the first portion carrying a unique value of row-column address information provided to access one of memory locations in one of the SRAM and DRAM cell arrays, the second portion carrying a unique value of SRAM/DRAM address information provided to select one of the SRAM and the DRAM.

    摘要翻译： 半导体存储器件包括设置在芯片上的SRAM，SRAM包括SRAM单元阵列。 在芯片上提供DRAM，DRAM包括DRAM单元阵列。 地址输入电路接收地址信号，地址信号具有第一部分和第二部分，第一部分承载提供用于访问SRAM和DRAM单元阵列之一中的存储单元之一的行列地址信息的唯一值 ，第二部分承载提供用于选择SRAM和DRAM之一的SRAM / DRAM地址信息的唯一值。