摘要:
An integrated circuit device comprising a wiring substrate on one surface of which integrated circuit chips are mounted, a power source substrate of a laminated structure provided in contact with the other surface of the wiring substrate and formed by alternately laminating a plurality of feeding conductor layers of a heat conductive metal and a plurality of electrically insulating layers of an electrically insulating material, and bonding together the laminated layers, a means for electrically connecting the wiring substrate and the power source substrate to each other, and a heat radiating means inserted in at least either the feeding conductor layers or the electrically insulating layers and adapted to radiate the heat, which occurs in the power source substrate, to the outside thereof. This integrated circuit device has a power source substrate of a remarkably high heat radiating efficiency, and is suitably used as an integrated circuit device having integrated circuit chips mounted with a high density on a wiring substrate therein.
摘要:
A semiconductor module cooling structure comprises a housing having a passage through which a cooling fluid flows; a cooling block to which the cooling fluid is supplied from the housing and which has an electrical insulating layer at the bottom portion and is combined with a semiconductor chip through the electrical insulating layer; and a bellows which is connected between the housing and the cooling block. The cooling fluid is supplied to the cooling block through the bellows. The bellows is formed in a manner such that a plurality of substantially plane ring-like metal plates are laminated, pressed, diffused, joined, and thereafter stretched and molded.
摘要:
A number of LSI chips (9) are mounted on a wiring substrate (12). A cooling element (68) comprises a housing (1), a bellows (2) and a cooling plate (6) for introducing a cooling medium. The cooling element is connected to the LSI chip by low melting solder, at the same time, the cooling plate is connected to the wiring substrate through a skirt (5) which is connected to the cooling plate and also connected to the wiring substrate by a low melting solder.
摘要:
The present invention provides an electroless gold plating solution which offers deposition layers exactly onto predetermined areas on the surface of the workpiece, without undesirable spread of prated areas. The electroless gold plating solution according to the invention contains 2-20 g/l of dimethylamine as amine group.
摘要:
A vulcanizable fluororubber composition which comprises:(a) a fluorine-containing elastomeric copolymer of vinylidene fluoride with at least one other ethylenically unsaturated monomer copolymerizable therewith;(b) an organic peroxide;(c) a polyfunctional compound;(d) at least one member selected from the group consisting of bivalent metal hydroxides and bivalent metal oxides; and(e) an organic base.
摘要:
A curable composition comprising an elastomeric vinylidene fluoride copolymer, an organic peroxide and a vulcanization accelerator, characterized in that said copolymer contains unsaturated bonds introduced by reacting an untreated elastomeric vinylidene fluoride copolymer dispersed in an aqueous medium, with an aqueous alkaline solution containing an onium compound.
摘要:
Disclosed is a method and apparatus for automatically controlling arc welding, wherein pieces of optical information provided by at least two bands of different wavelengths of light radiated from a weld area being arc-welded under predetermined welding conditions are alternately picked up by an optical device to extract various weld factors representing the actual status of the weld area from these pieces of optical information, and the extracted weld factors representing the actual status of the weld area are compared with the desired values of the weld factors representing the desired status of the weld area to compute the error or errors of the welding conditions, so that the welding conditions can be corrected on the basis of the detected error or errors of the welding conditions, whereby the weld factors can be controlled to the desired values.
摘要:
The invention provides a plating solution capable of forming a palladium plating film which can further improve solder characteristics in surface treatment of a composition made of a nickel plating film, a palladium plating film and a gold plating film on a surface of a conductor formed from a metal such as copper. In a palladium plating solution of the invention containing a soluble palladium salt and an electrically conductive salt having a liquid composition containing germanium, the amount of the soluble palladium salt is 0.1 g/l to 50 g/l in terms of a reduced value of palladium metal, the amount of the electrically conductive salt is 10 g/l to 400 g/l and the amount of the germanium is 0.1 mg/l to 1000 mg/l.
摘要:
An impact-resistance film for a flat display panel which is to prevent breakage and scattering of glass of the panel when panel receives an impact and which at the same time makes the weight reduction and thickness reduction possible, is presented. An impact-resistant film 30 for a flat display panel, which is an impact-resistant film to be bonded to a front glass 22 of a flat display panel main body 21 and which comprises a first layer 23 on the front glass side of the flat display panel, made of a transparent synthetic resin having a shear modulus of from 1×103 Pa to 1×106 Pa, a second layer 24 on the viewer's side of the first layer, made of a transparent synthetic resin having a shear modulus of at least 1×108 Pa, and a third layer 25 on the viewer's side of the second layer, made of a transparent synthetic resin having a shear modulus of at least 1×106 Pa and less than 1×108 Pa.
摘要:
The present invention provides an electroless gold plating solution which does not precipitate gold at high concentrations of thallium or lead compound, while retaining its effects such as increased deposition rate and larger crystallite sizes in the deposited layer. The electroless gold plating solution according to the invention contains 0.1-10 g/l of a chelating agent, such as diethylenetriaminetetraacetic acid (DTPA), ethylenediaminetetraacetic acid or nitrilotriacetic acid, DTPA being a preferable agent.