摘要:
A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
摘要:
A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.
摘要:
A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要:
An exercise detection apparatus determines body movements based on data detected by a detection unit, judges movement states for each body movement based on data detected by the detection unit, corrects the movement states based on a predetermined rule, calculates an exercise state of a user based on a result of the judgment, and stores the calculated exercise state in a storage unit. Accordingly, it is possible to provide an exercise detection apparatus capable of reducing erroneous judgments of the exercise states of the user.
摘要:
A health condition determining device accumulates data measured or input by an evaluation subject for each index of a plurality of items including a lifestyle index, which is an index related to body activity or lifestyle habit, and a biomarker, which is an index related to physiological state of the body. The health condition determining device then selects one or a plurality of biomarkers that lowers the evaluation of the health condition of the evaluation subject as a problematic index, extracts one or a plurality of lifestyle indices having the highest correlation with the problematic index as an improvable factor by comparing accumulated past data of the lifestyle index and the biomarker, and displays the improvable factor along with the evaluation of the health condition of the evaluation subject.
摘要:
The present invention provides an apparatus and method which enable detecting a microscopic defect sensitively by efficiently collecting and detecting scattering light from a defect in a wider region without enlarging the apparatus. In the apparatus for inspecting a defect on a surface of a sample, including illumination means which irradiates a surface of a sample with laser, reflected light detection means which detects reflected light from the sample, and signal processing means which processes a detected signal and detecting a defect on the sample, the reflected light detection means is configured to include a scattering light detection unit which collects scattering light components of the reflected light from the sample by excluding specularly reflected light components by using an aspheric flannel lens and detecting the scattering light components.
摘要:
A method for manufacturing a solid electrolytic capacitor having a solid electrolyte layer containing an electrically conductive polymer layer formed by electrolytic oxidative polymerization, comprising: forming a dielectric layer on a surface of an anode element containing a valve metal; forming an electrically conductive precoat layer on the dielectric layer; and performing electrolytic oxidative polymerization in an electrolytic polymerization solution containing a monomer, a dopant agent and a chelating agent to form the electrically conductive polymer layer on the electrically conductive precoat layer.
摘要:
A non-aqueous electrolyte battery according to the present invention is a non-aqueous electrolyte battery including a positive electrode, a negative electrode, a separator and a non-aqueous electrolyte, wherein aluminum silicate or a derivative thereof is contained in a location that can come into contact with the non-aqueous electrolyte in the battery. In the non-aqueous electrolyte battery, it is preferable that at least one of the separator, the positive electrode, the negative electrode and the non-aqueous electrolyte contains aluminum silicate or a derivative thereof.