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17 条记录 (耗时 0.019 秒)

    Semiconductor device and method of manufacturing the same
    1.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5254872A

    公开(公告)日：1993-10-19

    申请号：US673265

    申请日：1991-03-21

    申请人： Takashi Yoda ,  Tohru Watanabe ,  Katsuya Okumura

    发明人： Takashi Yoda ,  Tohru Watanabe ,  Katsuya Okumura

    IPC分类号： H01L23/532 ,  H01L23/48

    CPC分类号： H01L23/53223 ,  H01L2924/0002

    摘要： A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.

    摘要翻译： 公开了具有可靠接触的半导体器件。 该装置包括沉积在预定位置处在绝缘膜上开口的接触孔的底部和侧壁上的阻挡膜; 填充在接触孔中的第一金属膜; 以及用于形成互连件的低电阻的第二金属膜，其通过填充有第一金属膜的接触孔以上。 在阻挡金属膜上通过氧化形成氧化膜。 并且公开了一种制造半导体器件的方法。 该方法包括以下步骤：在沉积在半导体衬底上的绝缘膜中的预定位置打开接触孔之后，在接触孔的底壁和侧壁中形成阻挡膜; 在第一金属膜上填充接触孔，同时在预定温度下加热半导体衬底; 以及在所述半导体器件的表面上沉积第二金属膜，并且对所述第二金属膜进行构图以形成通过已经填充有所述第一金属膜的所述接触孔的互连。

    Method of manufacturing semiconductor devices
    5.
    发明授权
    Method of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US4876223A

    公开(公告)日：1989-10-24

    申请号：US260300

    申请日：1988-10-20

    申请人： Takashi Yoda ,  Tohru Watanabe

    发明人： Takashi Yoda ,  Tohru Watanabe

    IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

    CPC分类号： H01L21/31133 ,  H01L21/32134 ,  H01L21/7684 ,  Y10S148/051

    摘要： A method of manufacturing a semiconductor device whereby a wiring material is filled within a recess of an insulating film, with the upper surface of the wiring material being uneven, a coating film being evenly deposited on the wiring material, the wiring material and the coating film being etched with tetra-methyl-guanidine having the same etching speed with respect to the wiring material and the coating film in such a manner that the upper surface of the wiring material filled within the recess is made substantially flat and substantially flush with the upper surface of the insulating film. A tetra-methyl-guanide may be used which has a higher etching speed with respect to the wiring material than the coating film. In this case, the wiring material has an indentation above the recess, and the coating film is thick above the recess and thin above the insulating film. Therefore, the wiring material within the recess is etched in such a manner that the upper surface of the wiring material within the recess is made flat and substantially flush with the upper surface of the insulating film.

    ORGANOSILOXANE RESIN COMPOSITION AND LAMINATE COMPRISING THE SAME
    6.
    发明申请
    ORGANOSILOXANE RESIN COMPOSITION AND LAMINATE COMPRISING THE SAME 审中-公开
    有机硅氧烷树脂组合物和包含该组合物的层合物

    公开(公告)号：US20120070676A1

    公开(公告)日：2012-03-22

    申请号：US13322250

    申请日：2010-05-25

    申请人： Ryo Niimi ,  Takashi Yoda ,  Yume Morita

    发明人： Ryo Niimi ,  Takashi Yoda ,  Yume Morita

    IPC分类号： B32B27/08 ,  C08K13/02 ,  C08K3/22 ,  C09D183/04 ,  B82Y30/00

    CPC分类号： B32B27/28 ,  C08L83/04 ,  C08L83/14 ,  Y10T428/31663

    摘要： An organosiloxane resin composition which greatly improves the weatherability, hot water resistance and durability against environmental variations and a high-temperature environment of a substrate, imparts excellent abrasion resistance and has high optical transparency and a laminate.The organosiloxane resin composition comprises (A) colloidal silica (component A), (B) a hydrolyzed and condensed product of an alkoxysilane (component B), (C) a hydrolyzed and condensed product of an alkoxysilane having high hydrophobic nature (component C) and (D) a metal oxide (component D).

    摘要翻译： 大大提高耐候性，耐热水性和耐环境变化耐久性以及基板的高温环境的有机硅氧烷树脂组合物赋予了优异的耐磨性，并且具有高的光学透明性和层压体。 有机硅氧烷树脂组合物包含（A）胶态二氧化硅（A成分），（B）烷氧基硅烷（B成分）的水解缩合物，（C）疏水性高的烷氧基硅烷的水解缩合物（C成分） 和（D）金属氧化物（D成分）。

    Cabin lamp
    8.
    发明授权
    Cabin lamp 失效
    客舱灯

    公开(公告)号：US06595656B2

    公开(公告)日：2003-07-22

    申请号：US09976689

    申请日：2001-10-12

    申请人： Takashi Yoda

    发明人： Takashi Yoda

    IPC分类号： F21L400

    CPC分类号： B60Q3/44 ,  F21K9/20 ,  F21V21/30 ,  F21W2106/00 ,  F21Y2115/10

    摘要： A cabin lamp used in, for instance, an airplane having an LED module that is attached to a lamp housing and connected via a connector to a feeder element provided in the lamp housing. The LED module has a printed circuit board and a plurality of reflectors that are installed in a frame-shaped bezel detachably attached to a front end portion of the lamp housing. The printed circuit board is mounted with a plurality of light emitting diodes (LEDs), and the reflectors surround each of the LEDs so as to reflect the light from the LEDs substantially forward.

    摘要翻译： 例如，用于例如具有LED模块的飞机的舱灯，所述LED模块附接到灯壳体并且经由连接器连接到设置在灯壳体中的馈电元件。 LED模块具有印刷电路板和多个反射器，其安装在可拆卸地附接到灯壳体的前端部的框状挡板中。 印刷电路板安装有多个发光二极管（LED），并且反射器围绕每个LED，以便将来自LED的光基本向前反射。

    Semiconductor integrated circuit device having interposer and method of manufacturing the same
    9.
    发明授权
    Semiconductor integrated circuit device having interposer and method of manufacturing the same 有权
    具有插入件的半导体集成电路器件及其制造方法

    公开(公告)号：US06661088B1

    公开(公告)日：2003-12-09

    申请号：US09669724

    申请日：2000-09-26

    申请人： Takashi Yoda ,  Hirokazu Ezawa

    发明人： Takashi Yoda ,  Hirokazu Ezawa

    IPC分类号： H01L23053

    CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L27/228 ,  H01L2224/16225 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H05K1/141

    摘要： A semiconductor integrated circuit device has a semiconductor chip, interposer, and substrate. The semiconductor chip has a plurality of first pads arranged at first pitches on a surface. The interposer has a first surface and a second surface. On the first surface, a plurality of second pads are arranged at the first pitches. On said second surface, a plurality of third pads arranged at second pitches which are larger than the first pitches. The second pads and the first pads are connected to each other by joining the first surface of the interposer to the surface of the semiconductor chip so as to face each other. The substrate has a plurality of fourth pads arranged at the second pitches on a surface. The fourth pads and the third pads are connected to each other by joining the surface of the substrate to the second surface of the interposer so as to face each other.

    摘要翻译： 半导体集成电路器件具有半导体芯片，插入件和衬底。 半导体芯片具有在表面上以第一间距布置的多个第一焊盘。 插入器具有第一表面和第二表面。 在第一表面上，以第一间距布置多个第二垫。 在所述第二表面上，以比第一间距大的第二间距布置的多个第三衬垫。 第二焊盘和第一焊盘通过将插入件的第一表面与半导体芯片的表面接合以彼此面对而彼此连接。 衬底具有在表面上以第二间距布置的多个第四衬垫。 第四焊盘和第三焊盘通过将基板的表面与插入件的第二表面接合以彼此面对而彼此连接。