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    Method of forming CMOS with Si:C source/drain by laser melting and recrystallization
    2.
    发明授权
    Method of forming CMOS with Si:C source/drain by laser melting and recrystallization 有权
    通过激光熔融和重结晶用Si：C源极/漏极形成CMOS的方法

    公开(公告)号：US07598147B2

    公开(公告)日：2009-10-06

    申请号：US11860127

    申请日：2007-09-24

    申请人： Yaocheng Liu ,  Qiqing C. Ouyang ,  Kathryn T. Schonenberg ,  Chun-Yung Sung

    发明人： Yaocheng Liu ,  Qiqing C. Ouyang ,  Kathryn T. Schonenberg ,  Chun-Yung Sung

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7848

    摘要： A method of forming crystalline Si:C in source and drain regions is provided. After formation of shallow trench isolation and gate electrodes of field effect transistors, gate spacers are formed on gate electrodes. Preamorphization implantation is performed in the source and drain regions, followed by carbon implantation. The upper portion of the source and drain regions comprises an amorphous mixture of silicon, germanium, and/or carbon. An anti-reflective layer is deposited to enhance the absorption of a laser beam into the silicon substrate. The laser beam is scanned over the silicon substrate including the upper source and drain region with the amorphous mixture. The energy of the laser beam is controlled so that the temperature of the semiconductor substrate is above the melting temperature of the amorphous mixture but below the glass transition temperature of silicon oxide so that structural integrity of the semiconductor structure is preserved.

    摘要翻译： 提供了在源极和漏极区域中形成晶体Si：C的方法。 在形成浅沟槽隔离和场效应晶体管的栅电极之后，在栅电极上形成栅极间隔物。 在源极和漏极区域中进行前置放电，随后进行碳注入。 源区和漏区的上部包括硅，锗和/或碳的无定形混合物。 沉积抗反射层以增强激光束到硅衬底中的吸收。 激光束在包括具有无定形混合物的上源极和漏极区域的硅衬底上扫描。 控制激光束的能量使得半导体衬底的温度高于无定形混合物的熔融温度但低于氧化硅的玻璃化转变温度，从而保持半导体结构的结构完整性。

    METHOD OF FORMING CMOS WITH SI:C SOURCE/DRAIN BY LASER MELTING AND RECRYSTALLIZATION
    3.
    发明申请
    METHOD OF FORMING CMOS WITH SI:C SOURCE/DRAIN BY LASER MELTING AND RECRYSTALLIZATION 有权
    通过激光熔化和重结晶形成CMOS与Si：C源/漏极的方法

    公开(公告)号：US20090081836A1

    公开(公告)日：2009-03-26

    申请号：US11860127

    申请日：2007-09-24

    申请人： Yaocheng Liu ,  Qiqing C. Ouyang ,  Kathryn T. Schonenberg ,  Chun-Yung Sung

    发明人： Yaocheng Liu ,  Qiqing C. Ouyang ,  Kathryn T. Schonenberg ,  Chun-Yung Sung

    IPC分类号： H01L21/265 ,  H01L21/8238

    CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7848

    摘要： A method of forming crystalline Si:C in source and drain regions is provided. After formation of shallow trench isolation and gate electrodes of field effect transistors, gate spacers are formed on gate electrodes. Preamorphization implantation is performed in the source and drain regions, followed by carbon implantation. The upper portion of the source and drain regions comprises an amorphous mixture of silicon, germanium, and/or carbon. An anti-reflective layer is deposited to enhance the absorption of a laser beam into the silicon substrate. The laser beam is scanned over the silicon substrate including the upper source and drain region with the amorphous mixture. The energy of the laser beam is controlled so that the temperature of the semiconductor substrate is above the melting temperature of the amorphous mixture but below the glass transition temperature of silicon oxide so that structural integrity of the semiconductor structure is preserved.

    摘要翻译： 提供了在源极和漏极区域中形成晶体Si：C的方法。 在形成浅沟槽隔离和场效应晶体管的栅电极之后，在栅电极上形成栅极间隔物。 在源极和漏极区域中进行前置放电，随后进行碳注入。 源区和漏区的上部包括硅，锗和/或碳的无定形混合物。 沉积抗反射层以增强激光束到硅衬底中的吸收。 激光束在包括具有无定形混合物的上源极和漏极区域的硅衬底上扫描。 控制激光束的能量使得半导体衬底的温度高于无定形混合物的熔融温度但低于氧化硅的玻璃化转变温度，从而保持了半导体结构的结构完整性。

    Amorphization/templated recrystallization method for hybrid orientation substrates
    7.
    发明授权
    Amorphization/templated recrystallization method for hybrid orientation substrates 有权
    混合取向基板的非晶化/模板重结晶方法

    公开(公告)号：US07960263B2

    公开(公告)日：2011-06-14

    申请号：US12767261

    申请日：2010-04-26

    申请人： Keith Edward Fogel ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

    发明人： Keith Edward Fogel ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

    摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.

    摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 本发明的工艺流程解决了现有技术ATR方法未公开的两个主要困难：在由沟槽限定的非晶化Si区域的边缘产生“角部缺陷”，以及在高温后再结晶缺陷 - 未被沟槽限定的非ATR区域的去除退火。 特别地，本发明提供了一种工艺流程，其包括以下步骤：（i）在没有沟槽的衬底区域中进行非晶化和低温重结晶，（ii）形成在ATR'边缘处的缺陷区域的沟槽隔离区域的形成， d区域，以及（iii）在沟槽隔离区域中进行的高温缺陷去除退火。

    Semiconductor method and device with mixed orientation substrate
    8.
    发明授权
    Semiconductor method and device with mixed orientation substrate 有权
    具有混合取向衬底的半导体方法和器件

    公开(公告)号：US07678622B2

    公开(公告)日：2010-03-16

    申请号：US11868001

    申请日：2007-10-05

    申请人： Jiang Yan ,  Chun-Yung Sung ,  Danny Pak-Chum Shum ,  Alois Gutmann

    发明人： Jiang Yan ,  Chun-Yung Sung ,  Danny Pak-Chum Shum ,  Alois Gutmann

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1203 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/045 ,  H01L29/78687

    摘要： In a method of forming a semiconductor device, a wafer includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation. Insulating material is formed over the wafer. A first portion of the insulating material is removed to expose the first semiconductor region and a second portion of the insulating material is removed to expose the second semiconductor region. Semiconductor material of the first crystal orientation is epitaxially grown over the exposed first semiconductor region and semiconductor material of the second crystal orientation is epitaxially grown over the exposed second semiconductor region.

    摘要翻译： 在形成半导体器件的方法中，晶片包括第一晶体取向的第一半导体区域和第二晶体取向的第二半导体区域。 在晶片上形成绝缘材料。 除去绝缘材料的第一部分以暴露第一半导体区域，并且去除绝缘材料的第二部分以暴露第二半导体区域。 在暴露的第一半导体区域上外延生长第一晶体取向的半导体材料，并且在暴露的第二半导体区域上外延生长第二晶体取向的半导体材料。