公开(公告)号：US07229866B2

公开(公告)日：2007-06-12

申请号：US10935000

申请日：2004-09-07

申请人： Ting Gang Zhu ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Linlin Liu ,  Michael Murphy ,  Milan Pophristic

发明人： Ting Gang Zhu ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Linlin Liu ,  Michael Murphy ,  Milan Pophristic

IPC分类号： H01L21/338

CPC分类号： H01L29/32 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872

摘要： A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.

摘要翻译： 在作为肖特基结或肖特基二极管的一部分的半导体区域中形成保护环。 保护环通过离子注入形成于半导体接触层中，而不会使半导体接触层完全退火以形成高电阻区域。 保护环可以位于层的边缘处，或者可选地，离开层的边缘一定距离。 肖特基金属接触形成在层的顶部，肖特基接触的边缘设置在保护环的顶部。

公开(公告)号：US07253015B2

公开(公告)日：2007-08-07

申请号：US10780526

申请日：2004-02-17

申请人： Milan Pophristic ,  Michael Murphy ,  Richard A. Stall ,  Bryan S. Shelton ,  Linlin Liu ,  Alex D. Ceruzzi

发明人： Milan Pophristic ,  Michael Murphy ,  Richard A. Stall ,  Bryan S. Shelton ,  Linlin Liu ,  Alex D. Ceruzzi

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/452 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7787 ,  H01L29/872

摘要： A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.

摘要翻译： 通过在另一层上形成掺杂和未掺杂的氮化物半导体材料的交替子层，通过调制掺杂形成可重复且均匀的低掺杂层。 肖特基二极管由设置在更高掺杂的氮化物半导体层顶上的这种低掺杂氮化物半导体层形成。 当器件正向偏置时，所得器件具有低导通电阻，器件反向偏置时具有高击穿电压。

公开(公告)号：US07084475B2

公开(公告)日：2006-08-01

申请号：US10780363

申请日：2004-02-17

申请人： Bryan S. Shelton ,  Linlin Liu ,  Alex D. Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard A. Stall ,  Xiang Gao ,  Ivan Eliashevich

发明人： Bryan S. Shelton ,  Linlin Liu ,  Alex D. Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard A. Stall ,  Xiang Gao ,  Ivan Eliashevich

IPC分类号： H01L29/47

CPC分类号： H01L24/81 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/872 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/00

摘要： A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

摘要翻译： 横向导通肖特基二极管包括形成肖特基接触的多个台面区域，其至少由欧姆接触分开，以减小电流路径长度并减少肖特基接触中的电流拥挤，从而降低器件的正向电阻。 多个台面可以彼此隔离并且具有优化的尺寸和形状以减少前向阻力。 或者，一些台面可以是手指形状并与中央台面或桥台面相交，并且部分或全部欧姆接触件与指状台面相互交错。 指状台面的尺寸和相交结构的周长可以被优化以减小正向阻力。 肖特基二极管可以以倒装芯片布置的方式安装到基座上，这进一步降低了正向电压，并且改善了功率论文并减少了发热。

公开(公告)号：US07115896B2

公开(公告)日：2006-10-03

申请号：US10721488

申请日：2003-11-25

申请人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Michael Murphy ,  Richard A. Stall

发明人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L29/06

CPC分类号： H01L29/155 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

摘要翻译： 在硅衬底上生长氮化物半导体，通过沉积几个单层铝，以保护硅衬底免受生长过程中使用的氨的影响，然后从氮化铝形成成核层，并形成包含多个超晶格Al 具有不同组成的半导体和GaN或其它富镓氮化物半导体的中间层的半导体。 所得结构具有优异的晶体质量。 在器件完成之前除去用于外延生长的硅衬底，以便在诸如高电子迁移率晶体管的器件中提供优异的电性能。

公开(公告)号：US07863172B2

公开(公告)日：2011-01-04

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L29/872 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20110101371A1

公开(公告)日：2011-05-05

申请号：US12930179

申请日：2010-12-30

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US07436039B2

公开(公告)日：2008-10-14

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L23/58

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20090035925A1

公开(公告)日：2009-02-05

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L21/425

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20050179107A1

公开(公告)日：2005-08-18

申请号：US10780526

申请日：2004-02-17

申请人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

发明人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

IPC分类号： H01L21/28 ,  H01L29/15 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/778 ,  H01L29/872 ,  H01L27/095

CPC分类号： H01L29/452 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7787 ,  H01L29/872

摘要： A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.

摘要翻译： 通过在另一层上形成掺杂和未掺杂的氮化物半导体材料的交替子层，通过调制掺杂形成可重复且均匀的低掺杂层。 肖特基二极管由设置在更高掺杂的氮化物半导体层顶上的这种低掺杂氮化物半导体层形成。 当器件正向偏置时，所得器件具有低导通电阻，器件反向偏置时具有高击穿电压。

公开(公告)号：US20060145283A1

公开(公告)日：2006-07-06

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

发明人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L27/095 ,  H01L21/338

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。