公开(公告)号：US5985811A

公开(公告)日：1999-11-16

申请号：US780502

申请日：1997-01-08

申请人： Toda Masayuki ,  Tadahiro Ohmi ,  Yasuyuki Harada

发明人： Toda Masayuki ,  Tadahiro Ohmi ,  Yasuyuki Harada

IPC分类号： B08B3/10 ,  A61B19/00 ,  B08B3/12 ,  C11D3/39 ,  C11D7/00 ,  C11D11/00 ,  H01L21/304 ,  B08B3/04

CPC分类号： C11D3/3947 ,  B08B3/12 ,  C11D11/0047 ,  C11D11/007 ,  A61B90/70

摘要： A cleaning solution and cleaning method are provided which: (1) make treatment at room temperature possible, and do not require heating, (2) use little chemicals and water, (3) do not require specialized apparatuses, and moreover, (4) do not require the use of specialized chemicals. The cleaning solution of the present invention comprises pure water containing 20 ppb-100 ppb of oxygen and 2 ppb or more of nitrogen. Furthermore, the cleaning solution may comprise electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen. In the cleaning method of the present invention, the cleaning of a material to be cleaned is conducted in a cleaning solution comprising pure water containing 20 ppb-100 ppb of oxygen and 2 ppb-15 ppm of nitrogen, while applying ultrasound having a frequency of 30 kHz or more. Furthermore, in the cleaning method of the present invention, the cleaning of a material to be cleaned may be conducted in a cleaning solution comprising electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen, while applying ultrasound having a frequency of 30 kHz or more.

摘要翻译： 提供清洗方法和清洗方法：（1）在室温下进行处理，不需要加热，（2）少量使用化学品和水，（3）不需要专门的设备，而且（4） 不需要使用专门的化学品。 本发明的清洗液含有20ppb-100ppb的氧和2ppb以上的氮的纯水。 此外，清洁溶液可以包含含有OH-并且含有20ppb-100ppb氧的电解电离水。 在本发明的清洗方法中，要清洗的材料在包含20ppb-100ppb氧气和2ppb-15ppm氮气的纯水的清洁溶液中进行，同时施加频率为 30 kHz以上。 此外，在本发明的清洗方法中，清洗材料可以在含有OH-并含有20ppb-100ppb的氧的电解离子水的清洗溶液中进行，同时施加频率为 30 kHz以上。

公开(公告)号：US06325081B1

公开(公告)日：2001-12-04

申请号：US09214240

申请日：1999-05-17

申请人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

发明人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

IPC分类号： B08B302

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051

摘要： A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.5 MHz or more on the substrate through the cleaning liquid, and means for rotating the substrate or means for moving either of the substrate and the cleaning liquid supplying means in one direction, whereby injection of the undiluted solution or undiluted gas into the ultrapure water channel is controlled to continuously perform washing of the substrate by the cleaning liquid and washing by the ultrapure water.

摘要翻译： 一种洗涤装置和洗涤方法，其进一步改善洗涤效果并且能够用少量化学品进行高度清洁的洗涤。 另外，本发明的目的是提供一种高产量的洗涤装置，涉及快速切换各种高度责任的化学品，能够高速地进行一系列洗涤操作。洗涤装置包括未稀释的清洗液注入装置， 将未稀释的溶液或清洁液体的未稀释气体输送到超纯水通道中以制备所需浓度的清洗液体，连接到超级软化水通道的清洗液供应装置，用于同时向基材的前表面和后表面提供清洁液体 调节到期望浓度或超纯水的装置，用于通过清洁液体在衬底上叠加超声波或0.5MHz以上的高频声波的装置，以及用于旋转衬底或用于移动衬底和清洁装置的装置的装置 液体供应装置在一个方向上，由此注射未稀释的 控制溶液或未稀释气体进入超纯水通道，以通过清洗液体连续地进行基材清洗，并通过超纯水进行洗涤。

公开(公告)号：US6050276A

公开(公告)日：2000-04-18

申请号：US22432

申请日：1998-02-12

申请人： Yasuyuki Harada ,  Mitsuru Nakada ,  Tadahiro Ohmi

发明人： Yasuyuki Harada ,  Mitsuru Nakada ,  Tadahiro Ohmi

IPC分类号： B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  G11B23/50 ,  H01L21/00 ,  H01L21/304 ,  B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G11B23/505 ,  B08B2203/0288

摘要： There are disclosed an apparatus and method for cleaning a precision substrate through use of high-frequency- or ultrasonic-applied cleaning liquid. An object substrate is horizontally held and rotated. High-frequency- or ultrasonic-applied cleaning liquid is jetted toward the surface of the object substrate from first cleaning liquid jetting unit disposed above the object substrate, and the nozzle of the first cleaning liquid jetting unit is moved in parallel with the surface of the object substrate. Cleaning liquid is also fed toward the central portion of the surface of the object substrate from cleaning liquid feed-to-center unit during cleaning. In the cleaning apparatus and method, a sufficiently high cleaning speed is attained. Further, there is not involved the problem that the film of cleaning liquid becomes thin on the central portion of a substrate during cleaning due to the effect of a centrifugal force with a resultant difficulty in transmission of high frequency or ultrasonic vibration to the central portion and the problem that during cleaning, due to the effect of a centrifugal force, no liquid film is present on the central portion, which thus becomes dry and contaminated. The cleaning apparatus and method also proves a cost advantage.

摘要翻译： 公开了一种通过使用高频或超声波清洗液来清洁精密基板的装置和方法。 物体基板水平保持旋转。 从设置在物体基板上方的第一清洗液喷射单元向对象基板的表面喷射高频或超声波清洗液，第一清洗液喷射单元的喷嘴平行于 物体衬底。 在清洁期间，清洁液体也从清洁液体供给到中心单元朝向物体基板的表面的中心部分供给。 在清洁装置和方法中，达到足够高的清洁速度。 此外，不存在由于离心力的影响而导致的清洗液的中​​心部位的清洗液的薄膜变薄的问题，导致难以将高频或超声波振动传递到中心部分， 在清洗过程中，由于离心力的作用，在中心部分没有液膜存在，因此变得干燥和污染。 清洁装置和方法也证明了成本优势。

公开(公告)号：US09105450B2

公开(公告)日：2015-08-11

申请号：US13145398

申请日：2009-11-02

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H05H1/46 ,  H05H2001/4622

摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

公开(公告)号：US20140186162A1

公开(公告)日：2014-07-03

申请号：US14131299

申请日：2012-06-27

申请人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

发明人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

IPC分类号： F01D5/02

CPC分类号： F01D5/02 ,  F04C18/16 ,  F04C25/02 ,  F04C27/009 ,  F04C29/023 ,  F04C2220/30 ,  F04C2230/91 ,  Y10T29/49236

摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

摘要翻译： 在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。 本发明的旋转机构由旋转轴和密封壳构成。 在旋转轴和密封壳体之间，提供预定间隙。 在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。 对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是 形成在其自由表面上具有高平滑度。

公开(公告)号：US08714188B2

公开(公告)日：2014-05-06

申请号：US13239715

申请日：2011-09-22

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

IPC分类号： G05D7/06

CPC分类号： F16K47/02 ,  Y10T137/0324 ,  Y10T137/0396 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7842 ,  Y10T137/86389 ,  Y10T137/86397 ,  Y10T137/86461

摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

摘要翻译： 无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到 在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从 通过调节控制信号Sc进行电 - 气转换。

公开(公告)号：US08648393B2

公开(公告)日：2014-02-11

申请号：US13372159

申请日：2012-02-13

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

IPC分类号： H01L27/148

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

公开(公告)号：US08575023B2

公开(公告)日：2013-11-05

申请号：US13126249

申请日：2009-10-23

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

IPC分类号： H01L21/52

CPC分类号： H01L21/823814 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/823835 ,  H01L27/092 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/66772 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

摘要翻译： 提供了实现低电阻率的接触的半导体器件制造方法。 在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。 作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。 作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。

公开(公告)号：US08551830B2

公开(公告)日：2013-10-08

申请号：US12110800

申请日：2008-04-28

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US08465719B2

公开(公告)日：2013-06-18

申请号：US12425247

申请日：2009-04-16

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

IPC分类号： C01B31/36

CPC分类号： C23C16/325 ,  C23C16/01 ,  C23C16/56 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/024 ,  H05K1/0306 ,  H05K3/0011 ,  H05K2203/1105 ,  H01L2924/00

摘要： A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.

摘要翻译： 在20GHz时，碳化硅衬底具有等于或小于2.0dB / mm的高频损耗有效地安装和操作电子元件。 将碳化硅衬底在2000℃或更高温度下加热至20GHz时降低至2.0dB / mm以下的高频损耗。 此外，通过CVD制造碳化硅衬底，而不将氮气流入加热器，能够将高频损耗降低到2.0dB / mm以下。