公开(公告)号：US06325081B1

公开(公告)日：2001-12-04

申请号：US09214240

申请日：1999-05-17

申请人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

发明人： Nobuhiro Miki ,  Takahisa Nitta ,  Yasuyuki Harada ,  Tadahiro Ohmi

IPC分类号： B08B302

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051

摘要： A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.5 MHz or more on the substrate through the cleaning liquid, and means for rotating the substrate or means for moving either of the substrate and the cleaning liquid supplying means in one direction, whereby injection of the undiluted solution or undiluted gas into the ultrapure water channel is controlled to continuously perform washing of the substrate by the cleaning liquid and washing by the ultrapure water.

摘要翻译： 一种洗涤装置和洗涤方法，其进一步改善洗涤效果并且能够用少量化学品进行高度清洁的洗涤。 另外，本发明的目的是提供一种高产量的洗涤装置，涉及快速切换各种高度责任的化学品，能够高速地进行一系列洗涤操作。洗涤装置包括未稀释的清洗液注入装置， 将未稀释的溶液或清洁液体的未稀释气体输送到超纯水通道中以制备所需浓度的清洗液体，连接到超级软化水通道的清洗液供应装置，用于同时向基材的前表面和后表面提供清洁液体 调节到期望浓度或超纯水的装置，用于通过清洁液体在衬底上叠加超声波或0.5MHz以上的高频声波的装置，以及用于旋转衬底或用于移动衬底和清洁装置的装置的装置 液体供应装置在一个方向上，由此注射未稀释的 控制溶液或未稀释气体进入超纯水通道，以通过清洗液体连续地进行基材清洗，并通过超纯水进行洗涤。

公开(公告)号：US06129098A

公开(公告)日：2000-10-10

申请号：US139500

申请日：1998-08-25

申请人： Nobuhiro Miki ,  Takahisa Nitta ,  Tadahiro Ohmi ,  Nobukazu Ikeda ,  Naofumi Yasumoto

发明人： Nobuhiro Miki ,  Takahisa Nitta ,  Tadahiro Ohmi ,  Nobukazu Ikeda ,  Naofumi Yasumoto

IPC分类号： B01J4/02 ,  B01F3/08 ,  C02F1/68 ,  F04B13/00 ,  F04B53/14 ,  H01L21/00 ,  H01L21/304 ,  B08B3/02

CPC分类号： H01L21/67051 ,  B01F15/00357 ,  B01F3/0865 ,  B01F3/088 ,  C02F1/686 ,  F04B13/00 ,  F04B53/141 ,  C02F2103/04

摘要： An apparatus for injecting constant quantitative chemicals which is capable of injecting a chemical solution into ultra pure water without generating particulate contamination, and furthermore, the injection interval of the chemical solution to the cleaning nozzle is controlled in units of seconds within a range of a few seconds to 10 or more seconds, and the switching of the type of chemical solution and the changeover to ultra pure water cleaning can be conducted in a short period of time of approximately 1 second.The apparatus includes a chemical solution injection system having a chemical solution retaining part for retaining the chemical solution, a control system for pressurization and depressurization for controlling the pressure of the chemical solution in the chemical solution retaining part at regular intervals, an injection control system which operates in concert with the control of the pressure of the chemical solution, and is structured so as to conduct the intermittent injection and instantaneous mixing function of the chemical solution from the chemical solution injection system to the ultra pure water flow path, and the injection stoppage function, and a chemical solution replenishment system which is structured so as to operate in concert with the control of the chemical solution and to be capable of replenishing the chemical solution in the chemical solution retaining part from a chemical solution source.

摘要翻译： 一种用于注入恒定的定量化学品的装置，其能够将化学溶液注入超纯水中而不产生颗粒污染，此外，化学溶液到清洁喷嘴的注射间隔以几秒为单位进行控制 秒至10秒以上，化学溶液的种类和切换为超纯水清洗的时间可以在1秒钟的短时间内进行。 该装置包括具有用于保持化学溶液的化学溶液保留部分的化学溶液注入系统，用于加压和减压的控制系统，用于以规则的间隔控制化学溶液保留部分中的化学溶液的压力;注射控制系统， 与控制化学溶液的压力一致地进行操作，并且构成为将化学溶液从化学溶液注入系统到超纯水流路的间歇注入和瞬时混合功能进行，并且注射停止 功能和化学溶液补充系统，其结构化以便与化学溶液的控制协同工作，并且能够从化学溶液源补充化学溶液保留部分中的化学溶液。

公开(公告)号：US06357385B1

公开(公告)日：2002-03-19

申请号：US09355229

申请日：1999-10-05

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C1600

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&mgr;0&sgr;)½, where &sgr;, &mgr;0 and &ohgr; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 构件的厚度（d）大于（2 / mu0sigma）1/2，其中σ，μ0和ω分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US6150851A

公开(公告)日：2000-11-21

申请号：US92465

申请日：1998-06-05

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Koji Kotani

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Koji Kotani

IPC分类号： G01R19/165 ,  G11C27/02 ,  H03K5/08

CPC分类号： G11C27/026

摘要： Charge transfer amplifier circuit which is capable of canceling fluctuations in the element characteristics thereof and which conducts highly accurate voltage amplification without the use of a stationary current, and provides a voltage comparator which may be applied to a highly accurate A/D converter which has low power consumption. The charge transfer amplifier circuit is provided with a MOS transistor, a first capacity and a second capacity which are effectively connected to, respectively, the source electrode and the drain electrode of the MOS transistor, a mechanism for setting the region between the terminals of the first capacity and the region between the terminals of the second capacity, respectively, to appropriate predetermined potential differences, and for releasing these, and a mechanism for appropriately externally altering the potential difference between the gate and the source of the MOS transistor. The first capacity is set so as to be larger than the second capacity. Furthermore, in the voltage comparator, a dynamic latch circuit is connected to the drain electrode of the charge transfer amplifier circuit.

摘要翻译： 电荷传输放大器电路，其能够抵消其元件特性的波动，并且在不使用稳定电流的情况下进行高精度的电压放大，并且提供可应用于具有低电平的高精度A / D转换器的电压比较器 能量消耗。 电荷传输放大器电路设置有分别有效地连接到MOS晶体管的源电极和漏电极的MOS晶体管，第一电容和第二电容，用于设置MOS晶体管的端子之间的区域的机构 第一容量和第二容量的端子之间的区域分别适当地预定的电位差，并且用于释放它们，以及用于适当地外部改变MOS晶体管的栅极和源极之间的电位差的机构。 第一容量被设定为大于第二容量。 此外，在电压比较器中，动态锁存电路连接到电荷传输放大器电路的漏电极。

公开(公告)号：US06462298B1

公开(公告)日：2002-10-08

申请号：US09045526

申请日：1998-03-20

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K3538

CPC分类号： B23K35/0205 ,  B23K9/28 ,  B23K35/222

摘要： The present invention provides a fixing structure for a welding electrode and a welding head which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and reduction of time required for welding and also which make it possible to execute welding for a long time with high reliability. In this fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to fix the welding electrode to the fixing base.

摘要翻译： 本发明提供一种焊接电极和焊接头的固定结构，其能够提高焊接电极的耐久性，提高焊接中的工作效率，并且减少焊接所需的时间，并且还可以执行焊接 长时间具有高可靠性。在该固定结构中，焊接电极的固定部分通过导热材料插入到固定基座的插入部分中，焊接电极的固定部分的周面与 固定基座，将焊接电极固定在固定基座上。

公开(公告)号：US06416586B1

公开(公告)日：2002-07-09

申请号：US09450167

申请日：1999-11-29

申请人： Tadahiro Ohmi ,  Toshihiro Il ,  Kenji Mori ,  Toshikazu Abe ,  Hirosi Arakawa ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Toshihiro Il ,  Kenji Mori ,  Toshikazu Abe ,  Hirosi Arakawa ,  Takahisa Nitta

IPC分类号： B08B308

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B08B3/123 ,  B08B2203/005 ,  Y10S134/902

摘要： The present invention has as an object thereof to provide a cleaning method which realizes, in the cleaning process, (1) a reduction in the number of processes, (2) a simplification of the cleaning apparatus, and (3) a reduction in the amount of chemicals and pure water employed, and which has highly superior cleaning effects and does not damage the substrate body, as well as to provide a rinsing method which aids in the hydrogen termination of silicon atoms.

摘要翻译： 本发明的目的在于提供一种清洁方法，其在清洗过程中实现（1）减少加工次数，（2）清洁装置的简化，（3）减少 使用的化学品和纯水的量，并且具有非常优异的清洁效果并且不会损坏基板主体，以及提供有助于硅原子的氢终止的冲洗方法。

公开(公告)号：US06348157B1

公开(公告)日：2002-02-19

申请号：US09097278

申请日：1998-06-12

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Kazuhiko Kawada ,  Mitsunori Nakamori ,  Toshihiro II

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Kazuhiko Kawada ,  Mitsunori Nakamori ,  Toshihiro II

IPC分类号： H01L2100

CPC分类号： H01L21/02052 ,  B08B3/12 ,  Y10S438/906

摘要： A cleaning method capable of processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The chemical cleaning processes and rinse processes employ pure water or ultrapure water in a semiconductor wet cleaning process, rinse water or chemicals which suppresses formation of surface oxide films, removes particles and prevent their redeposition, and aids in the hydrogen termination of the silicon atoms. The cleaning method of the resent invention includes cleaning which is conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF, H2O, and surfactant, while applying vibration having a frequency of 500 kHz or more, cleaning conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF and H2O in order to remove oxide films, and cleaning which is conducted using pure water. After cleaning a material to be cleaned using chemicals, rinsing is conducted using pure water or ultrapure water containing hydrogen gas in an amount of 0.5 ppm or more and containing oxygen gas in an amount of 100 ppb or less.

摘要翻译： 能够在不进行加热的情况下在室温下进行处理的清洁方法，使用少量化学物质和水，并且不需要特殊的装置或材料。 化学清洗过程和漂洗工艺在半导体湿法清洗工艺中使用纯水或超纯水，冲洗水或抑制表面氧化膜形成的化学物质，去除颗粒并防止其再沉积，并有助于硅原子的氢终止。 本发明的清洗方法包括使用含有臭氧的纯水进行的清洗，使用含有HF，H 2 O和表面活性剂的清洗液进行清洗，同时施加频率为500kHz以上的振动，使用含有 臭氧，使用含有HF和H 2 O的清洗液进行清洁以除去氧化膜，以及使用纯水进行的清洗。 在使用化学品清洁待清洁的材料之后，使用含有0.5ppm以上的氢气的纯水或超纯水进行冲洗，并含有100ppb以下的氧气。

公开(公告)号：US06258244B1

公开(公告)日：2001-07-10

申请号：US09076834

申请日：1998-05-13

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： C25D900

CPC分类号： H01L21/3063 ,  C25D11/005 ,  C25D11/32 ,  H01L21/76256

摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

摘要翻译： 为了有效地除去溶液中的化学反应中副产物的气体分子，以达到溶液中化学反应的高效率，高速率和均匀性，并且为了实现适用于 制造SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应 反应容器中的溶液总是控制在不大于其在反应期间的溶解度。

公开(公告)号：US06255731B1

公开(公告)日：2001-07-03

申请号：US09123364

申请日：1998-07-28

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： H01L2348

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L23/4825 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

摘要翻译： 适用于千兆级集成（GSI）的半导体衬底包括至少其表面由半导体制成的支撑体，导电材料层，绝缘层和按上述顺序排列的半导体层。 导电材料层至少部分地具有通过使两种金属，金属和半导体，金属和金属 - 半导体化合物，半导体和金属 - 半导体化合物或两种金属 - 半导体化合物形成的导电反应层 互相反应。 在反应层和绝缘层或载体之间设置由不与反应层反应的材料制成的导电反应终止层。

公开(公告)号：US06220500B1

公开(公告)日：2001-04-24

申请号：US09130583

申请日：1998-08-07

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K120

CPC分类号： B23K35/383 ,  B23K1/20 ,  Y10T428/12535 ,  Y10T428/12979 ,  Y10T428/31678

摘要： A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

摘要翻译： 对经过氟化物钝化处理的待焊接材料的焊接方法以及氟化物钝化再处理方法，其中，在焊接后进行氟化物钝化再处理时，不产生颗粒或灰尘。 该方法提供了优异的耐氟体系气体阻力。 在氟化物钝化处理期间，将氢气流入待焊接材料的气体（背面保护气体）。 在焊接方法的一个实施例中，氟化钝化膜在待焊接材料的对接端面的预定范围内的厚度设定为10nm以下，随后进行焊接。 此外，氟化物钝化再处理方法包括以下步骤：至少在焊接之后加热焊接部分，并且在部件的内部部分使含有氟气的气体流动。