公开(公告)号：US20050147839A1

公开(公告)日：2005-07-07

申请号：US11028582

申请日：2005-01-05

申请人： Tokihito Suwa ,  Satoru Shigeta ,  Shinji Shirakawa ,  Yoshitaka Ochiai

发明人： Tokihito Suwa ,  Satoru Shigeta ,  Shinji Shirakawa ,  Yoshitaka Ochiai

IPC分类号： H01L23/36 ,  B60W10/08 ,  H01L23/367 ,  H01L23/48 ,  H01L23/488 ,  H01L25/07 ,  H05K3/32 ,  B32B31/00

CPC分类号： B60K6/26 ,  B60K6/48 ,  B60W10/08 ,  H01L23/367 ,  H01L23/48 ,  H01L23/488 ,  H01L25/072 ,  H01L2224/05554 ,  H01L2224/49175 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H05K3/321 ,  H05K2201/0373 ,  H05K2201/1028 ,  Y02T10/6221 ,  Y10T428/12556 ,  H01L2924/00

摘要： In order to solve the issue mentioned above, the present invention is featured in electrically conductive adhesive sheet: wherein the substrate 1 which composes electrically, thermally, or electrically and thermally conducting paths in a direction along the plane of the sheet is formed of metallic foil having a coefficient of thermal expansion between the coefficient of thermal expansion of one of at least two bonded members and the coefficient of thermal expansion of another one of the bonded members. In accordance with the present invention adopting the composition mentioned above, a stress applied to the protrusion layer 2, which composes electrically, thermally, or both electrically and thermally conducting paths between the substrate 1 and the bonded members by difference in thermal expansion, can be moderated.

摘要翻译： 为了解决上述问题，本发明的特征在于导电性粘合片：其特征在于，沿着所述片材的平面的方向构成电，热或导电或导热的路径的基板1由金属箔 具有至少两个接合构件中的一个的热膨胀系数与另一个接合构件的热膨胀系数之间的热膨胀系数。 根据采用上述组合物的本发明，通过热膨胀差异，施加到基板1和结合部件之间的导电，热或导电路径的突起层2的应力可以是 主持人

公开(公告)号：US07126308B2

公开(公告)日：2006-10-24

申请号：US10715379

申请日：2003-11-19

申请人： Satoru Shigeta ,  Yuuji Maeda ,  Junichi Sakano ,  Shinji Shirakawa

发明人： Satoru Shigeta ,  Yuuji Maeda ,  Junichi Sakano ,  Shinji Shirakawa

IPC分类号： H02P27/04

CPC分类号： H03K17/163 ,  H03K17/16

摘要： In order to provide an interface circuit, a power converter using the same and an electric vehicle using the same, wherein this interface circuit ensures improved control reliability without employing a photo-coupler, an interface circuit 100A transfers control signals to the power transistor in a large-current circuit 300 from a small-signal circuit 200 for driving a power transistor. The interface circuit 100A has a noise absorber 120 that electrically absorbs a noise voltage produced between the ground of the small-signal circuit 200 and that of the power transistor. The noise absorber 120 transfers to the power transistor the control signals generated by the small-signal circuit 200, without being affected by the noise voltage if produced.

摘要翻译： 为了提供接口电路，使用该接口电路的电力转换器和使用该接口电路的电动车辆，其中该接口电路确保在不使用光电耦合器的情况下改善控制可靠性，接口电路100A将控制信号传送到功率晶体管 来自用于驱动功率晶体管的小信号电路200的大电流电路300。 接口电路100A具有电吸收小信号电路200的接地与功率晶体管的接地之间产生的噪声电压的噪声吸收体120。 噪声吸收器120将由小信号电路200产生的控制信号传送到功率晶体管，而不受噪声电压的影响。

公开(公告)号：US06943445B2

公开(公告)日：2005-09-13

申请号：US10468038

申请日：2002-03-29

申请人： Shinji Shirakawa ,  Akira Mishima ,  Keiichi Mashino ,  Toshiyuki Innami ,  Shinichi Fujino ,  Hiromichi Anan ,  Yoshitaka Ochiai

发明人： Shinji Shirakawa ,  Akira Mishima ,  Keiichi Mashino ,  Toshiyuki Innami ,  Shinichi Fujino ,  Hiromichi Anan ,  Yoshitaka Ochiai

IPC分类号： H01L23/538 ,  H01L25/07 ,  H02M7/00 ,  H01L23/34

CPC分类号： H02M7/003 ,  H01L23/5383 ,  H01L23/645 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switches 13a and 13b, an output terminal, positive/negative polarity DC terminals 2 and 3, and an insulating substrate 15a in which conductor layers 12, 17 and 19 having a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layers 16 and 18 are alternately laminated. The surface and inner-layer conductor layers 12 and 17 which interpose the insulating layer 16 therebetween are electrically connected by a conductor 20 passing through the insulating layer 16 interposed between the conductor layers 12 and 17. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layers 12 and 17 which interpose the insulating layer 16 therebetween.

摘要翻译： 本发明提供一种降低用于桥接半导体开关的布线的电感的半导体器件，并且实现了尺寸的减小。 在形成的半导体器件内部有两个可控制的桥接半导体开关13a和13b，一个输出端子，正/负极性DC端子2和3以及绝缘基板15a，其中导体层12,17和19具有 导体部分和用于将半导体开关桥接到其表面上的DC端子的内层中，并且绝缘层16和18交替层叠。 其间插入绝缘层16的表面和内层导体层12和17通过插在导体层12和17之间的绝缘层16的导体20电连接。 提供电流路径（虚线），以允许电流流过用于将绝缘基板上的两个半导体开关安装在绝缘基板上的电桥流动，以在导体层12和17之间的相反方向流动，其间插入绝缘层16。

公开(公告)号：US06843335B2

公开(公告)日：2005-01-18

申请号：US10024338

申请日：2001-12-21

申请人： Shinji Shirakawa ,  Akira Mishima ,  Keiichi Mashino ,  Toshiyuki Innami ,  Shinichi Fujino ,  Hiromichi Anan ,  Yoshitaka Ochiai

发明人： Shinji Shirakawa ,  Akira Mishima ,  Keiichi Mashino ,  Toshiyuki Innami ,  Shinichi Fujino ,  Hiromichi Anan ,  Yoshitaka Ochiai

IPC分类号： H02M7/04 ,  B60L11/14 ,  B60L11/18 ,  H01L23/50 ,  H01L25/16 ,  H02M7/00 ,  H02M7/5387 ,  H02P27/06 ,  H05K7/14 ,  B60K1/00

CPC分类号： B60L15/007 ,  B60L11/1803 ,  H01L23/50 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L25/165 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/1432 ,  Y02T10/645 ,  Y02T10/7005 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A positive side conductor and a negative side conductor of an input terminal electrically connected to semiconductor elements, are electrically insulated from each other, and are laminated with each other, and the input terminal having such a laminated structure, an output terminal and substrates mounted thereon the semiconductor elements are arranged in a checkered pattern in a container. Further, the semiconductor elements mounted on the substrates, the input terminal and the output terminal are electrically connected to one another so as to obtain a loop-like electric path on a conductive member, thereby it is possible to aim at miniaturizing the power conversion apparatus and lowering the inductance thereof.

摘要翻译： 与半导体元件电连接的输入端子的正侧导体和负极导体彼此电绝缘，并且彼此层叠，并且具有这种层叠结构的输入端子，安装在其上的输出端子和基板 半导体元件以容器中的方格布置。 此外，安装在基板，输入端子和输出端子上的半导体元件彼此电连接，以便在导电构件上获得环状电路，从而可以将电力转换装置 并降低其电感。

公开(公告)号：US20080265278A1

公开(公告)日：2008-10-30

申请号：US12103911

申请日：2008-04-16

申请人： Kenji Hara ,  Junichi Sakano ,  Shinji Shirakawa

发明人： Kenji Hara ,  Junichi Sakano ,  Shinji Shirakawa

IPC分类号： H01L29/739 ,  G09G5/00

CPC分类号： H01L29/7394 ,  G09G3/293 ,  G09G3/296 ,  G09G2330/04

摘要： A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

摘要翻译： 一种横向IGBT结构，其具有包括两个或更多个用于一个集电极端子的第二导电类型的基底层的发射极端子，其中发射极区域中的第二导电类型的基极层被第一导电类型层覆盖，所述第一导电类型层具有 浓度高于漂移层的浓度，使得覆盖发射极区域的第一导电类型层和掩埋氧化物膜之间的硅层具有降低的电阻，从而增加流向离集电极更远的发射极的电流，从而提高电流密度 。

公开(公告)号：US20060192534A1

公开(公告)日：2006-08-31

申请号：US11356075

申请日：2006-02-17

申请人： Tatsumi Yamauchi ,  Shinji Shirakawa ,  Masahiro Iwamura ,  Masamitsu Inaba ,  Keiichi Mashino ,  Keiji Kunii

发明人： Tatsumi Yamauchi ,  Shinji Shirakawa ,  Masahiro Iwamura ,  Masamitsu Inaba ,  Keiichi Mashino ,  Keiji Kunii

IPC分类号： H02H7/06 ,  H02P9/00 ,  H02P11/00

CPC分类号： H02P9/102 ,  H02P6/005 ,  H02P9/107 ,  H02P2101/45

摘要： A generator having a field coil L, and an SW1 control circuit 2 for controlling field current flowing through the field coil L. When a generating operation of the generator is to be ended, a switch 1 SW1 is turned off to interrupt the field current flowing through the field coil L, and a switch 2 SW2 is turned off to allow the field current remaining the field coil L to the current path including a resistance element 1 with a resistance element capable of quickly attenuating the field current.

摘要翻译： 具有励磁线圈L的发电机和用于控制流过励磁线圈L的励磁电流的SW 1控制电路2.当发电机的发电操作结束时，开关1 SW 1断开以中断励磁 流过励磁线圈L的电流和开关2 SW 2截止，使励磁线圈L的励磁电流保持在包括具有能够快速衰减励磁电流的电阻元件的电阻元件1的电流路径。

公开(公告)号：US06791854B2

公开(公告)日：2004-09-14

申请号：US10277139

申请日：2002-10-22

申请人： Shinji Shirakawa ,  Akira Mishima ,  Hideshi Fukumoto ,  Keiichi Mashino ,  Toshiyuki Innami

发明人： Shinji Shirakawa ,  Akira Mishima ,  Hideshi Fukumoto ,  Keiichi Mashino ,  Toshiyuki Innami

IPC分类号： H02M100

CPC分类号： H02M7/003 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01L2924/00014

摘要： A semiconductor apparatus includes positive and negative side conductors for bridge-connecting semiconductor switches, constituted to a wide conductor, and laminated by sandwiching an insulator between them. A semiconductor apparatus includes positive and negative side conductors extended from its case, and an electrolytic capacitor connected to the extension portion of the positive and negative side conductors. A power converter uses the semiconductor apparatus.

摘要翻译： 半导体装置包括用于桥接半导体开关的正侧和负侧导体，构成为宽导体，并且通过在它们之间夹着绝缘体层叠。 半导体装置包括从其壳体延伸的正极和负极侧导体，以及连接到正极和负极侧导体的延伸部分的电解电容器。 功率转换器使用半导体装置。

公开(公告)号：US07948058B2

公开(公告)日：2011-05-24

申请号：US12103911

申请日：2008-04-16

申请人： Kenji Hara ,  Junichi Sakano ,  Shinji Shirakawa

发明人： Kenji Hara ,  Junichi Sakano ,  Shinji Shirakawa

IPC分类号： H01L29/00

CPC分类号： H01L29/7394 ,  G09G3/293 ,  G09G3/296 ,  G09G2330/04

摘要： A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

摘要翻译： 一种横向IGBT结构，其具有包括两个或更多个用于一个集电极端子的第二导电类型的基底层的发射极端子，其中发射极区域中的第二导电类型的基极层被第一导电类型层覆盖，所述第一导电类型层具有 浓度高于漂移层的浓度，使得覆盖发射极区域的第一导电类型层和掩埋氧化物膜之间的硅层具有降低的电阻，从而增加流向离集电极更远的发射极的电流，从而提高电流密度 。

公开(公告)号：US20100165681A1

公开(公告)日：2010-07-01

申请号：US12646990

申请日：2009-12-24

申请人： Junichi Sakano ,  Kenji Hara ,  Shinji Shirakawa

发明人： Junichi Sakano ,  Kenji Hara ,  Shinji Shirakawa

IPC分类号： H02M7/06 ,  H03K17/687

CPC分类号： H03K17/163 ,  H03K17/6877

摘要： In a driving circuit, for controlling the turning on and off of a main semiconductor switching device of an insulated gate type, in an insulated gate semiconductor switching device for electric power conversion, bipolar semiconductor devices of an insulated gate control type, particularly insulated gate bipolar transistors (IGBTs) are used at the output stage of a circuit that controls the gate voltage of the main semiconductor switching device.

摘要翻译： 在用于控制绝缘栅型主半导体开关器件的导通和截止的驱动电路中，在用于电力转换的绝缘栅半导体开关器件中，绝缘栅极控制型双极半导体器件，特别是绝缘栅极双极型 在控制主半导体开关器件的栅极电压的电路的输出级使用晶体管（IGBT）。

公开(公告)号：US07471004B2

公开(公告)日：2008-12-30

申请号：US11745036

申请日：2007-05-07

申请人： Hiroshi Kanazawa ,  Takashi Kobayashi ,  Noriaki Hino ,  Shinji Shirakawa ,  Keiichi Mashino ,  Masanori Tsuchiya

发明人： Hiroshi Kanazawa ,  Takashi Kobayashi ,  Noriaki Hino ,  Shinji Shirakawa ,  Keiichi Mashino ,  Masanori Tsuchiya

IPC分类号： F02D29/06 ,  H02M5/42 ,  H02M7/04

CPC分类号： H02P25/22 ,  H02J7/1492 ,  Y02T10/7005 ,  Y02T10/92

摘要： An AC generator comprises a rotor and a stator having a three-phase winding. A three-phase inverter is connected to the three-phase winding. Here, the three-phase winding comprises at least two independent three-phase windings. Switching elements for respective phases of the three-phase inverter are connected in parallel by the number of the independent three-phase windings, and in-phase windings are individually connected to their parallel switching elements.

摘要翻译： 交流发电机包括转子和具有三相绕组的定子。 三相绕组连接三相逆变器。 这里，三相绕组包括至少两个独立的三相绕组。 三相逆变器的各相的开关元件并联连接独立的三相绕组的数量，并且同相绕组分别连接到它们的并联开关元件。