公开(公告)号：US10468268B2

公开(公告)日：2019-11-05

申请号：US14907633

申请日：2014-08-18

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/027 ,  H01J37/32 ,  H01L21/3105 ,  B82Y40/00

Abstract: There is provided an etching method for etching an object to be processed by using a substrate processing apparatus including a process chamber including a first electrode and a second electrode disposed opposite to the first electrode to receive the object to be processed thereon. The etching method includes a process of removing at least one of a first polymer and a second polymer by etching the object to be processed on which a pattern of the first polymer and the second polymer is formed by phase separation of a block copolymer containing the first polymer and the second polymer at a temperature lower than or equal to 10 degrees C. by using plasma of a process gas.

公开(公告)号：US09543164B2

公开(公告)日：2017-01-10

申请号：US14555826

申请日：2014-11-28

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

Abstract: An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas.

Abstract translation: 提供了蚀刻方法，用于对配置在基板上的蚀刻靶膜进行蚀刻处理。 蚀刻方法包括提供包含含卤素气体，氢气，惰性气体和氧气的处理气体的步骤; 使用从处理气体产生的等离子体对配置在蚀刻靶膜上的图案化掩模进行处理; 并且使用由蚀刻气体产生的等离子体进行处理的蚀刻目标膜。

公开(公告)号：US20150243524A1

公开(公告)日：2015-08-27

申请号：US14427780

申请日：2013-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide Kihara ,  Hiromi Mochizuki ,  Masanobu Honda ,  Masaya Kawamata ,  Ken Kobayashi ,  Ryoichi Yoshida

IPC: H01L21/311 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31144 ,  G03F7/40 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32733 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68764

Abstract: A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).

Abstract translation: 一种处理目标物体的方法包括：（a）将目标物体安装在设置在处理容器中的安装台上时，将抗蚀剂掩模暴露于在处理容器内激发含氢气体的等离子体产生的活性氢原子; 和（b）在将抗蚀剂掩模暴露于活性物质的氢之后，通过激发处理容器内的蚀刻剂气体的等离子体蚀刻硬掩模层。 通过向上电极施加用于等离子体激发的高频功率来激发等离子体。 在该方法中，将硬质掩模层（b）工序）的蚀刻中的上部电极与安装台之间的距离设定为比抗蚀剂露出时的上部电极与安装台的距离大 对活性氢的物质的掩模（（a）工艺）。

公开(公告)号：US10264630B2

公开(公告)日：2019-04-16

申请号：US14630775

申请日：2015-02-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryoichi Yoshida ,  Hiraku Murakami ,  Nobutaka Sasaki

IPC: H05B1/00 ,  H05B7/18 ,  H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

公开(公告)号：US08975190B2

公开(公告)日：2015-03-10

申请号：US14036240

申请日：2013-09-25

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32091 ,  H01J37/32155

Abstract: A plasma processing method includes a surface improving step of improving a surface of the photoresist film by performing plasma processing using a hydrogen-containing gas as a processing gas and an etching step of etching the SiON film by performing plasma processing using a processing gas including a gas containing a CHF-based gas and a chlorine-containing gas while using as a mask the photoresist film having the improved surface.

Abstract translation: 一种等离子体处理方法包括：通过使用含氢气体作为处理气体进行等离子体处理来改善光致抗蚀剂膜的表面的表面改性步骤以及通过使用包括以下步骤的处理气体进行等离子体处理来蚀刻SiON膜的蚀刻步骤 同时使用具有改进的表面的光致抗蚀剂膜作为掩模，含有基于CHF的气体和含氯气体的气体。

公开(公告)号：US09349574B2

公开(公告)日：2016-05-24

申请号：US14414946

申请日：2013-08-05

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida ,  Takayuki Ishii ,  Ken Kobayashi

IPC: C03C15/00 ,  H01J37/32 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01J37/32082 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Abstract translation: 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。

公开(公告)号：US09583361B2

公开(公告)日：2017-02-28

申请号：US14427780

申请日：2013-09-11

Applicant: Tokyo Electron Limited

Inventor： Yoshihide Kihara ,  Hiromi Mochizuki ,  Masanobu Honda ,  Masaya Kawamata ,  Ken Kobayashi ,  Ryoichi Yoshida

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/687 ,  G03F7/40 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/31144 ,  G03F7/40 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32733 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68764

Abstract: A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).

Abstract translation: 一种处理目标物体的方法包括：（a）将目标物体安装在设置在处理容器中的安装台上时，将抗蚀剂掩模暴露于在处理容器内激发含氢气体的等离子体产生的活性氢原子; 和（b）在将抗蚀剂掩模暴露于活性物质的氢之后，通过激发处理容器内的蚀刻剂气体的等离子体蚀刻硬掩模层。 通过向上电极施加用于等离子体激发的高频功率来激发等离子体。 在该方法中，将硬质掩模层（b）工序）的蚀刻中的上部电极与安装台之间的距离设定为比抗蚀剂露出时的上部电极与安装台的距离大 对活性氢的物质的掩模（（a）工艺）。

公开(公告)号：US20150206715A1

公开(公告)日：2015-07-23

申请号：US14414946

申请日：2013-08-05

Applicant: Tokyo Electron Limited

Inventor： Ryoichi Yoshida ,  Takayuki Ishii ,  Ken Kobayashi

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31144

Abstract: A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Abstract translation: 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。