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公开(公告)号：US20120196150A1
公开(公告)日：2012-08-02
申请号：US13393556
申请日：2010-09-01
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译： 提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞 温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。 通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。
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公开(公告)号：US09187842B2
公开(公告)日：2015-11-17
申请号：US13640760
申请日：2011-04-12
IPC分类号： C30B29/24 , C30B1/02 , C03C17/00 , C03C17/23 , C04B35/465 , C04B35/468 , C04B35/495 , C30B7/06 , C30B29/30 , H01L41/187 , C30B1/04 , C30B1/10
CPC分类号： C30B1/023 , C03C17/001 , C03C17/23 , C03C2217/23 , C04B35/465 , C04B35/4682 , C04B35/495 , C04B2235/3201 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3291 , C04B2235/3298 , C04B2235/441 , C04B2235/665 , C04B2235/768 , C04B2235/787 , C30B1/04 , C30B1/10 , C30B7/06 , C30B29/30 , H01L41/1871 , H01L41/1873
摘要： A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.
摘要翻译： 在基材上形成包含有机金属盐或醇盐或非晶态薄膜的薄膜，其中每个薄膜能够形成由组成式A表示的Dion-Jacobson钙钛矿型金属氧化物（ Bn-1MnO3n + 1）（其中n为2或更大的自然数; A表示选自Na，K，Rb和Cs中的一种或多种一价阳离子; B包含一种或多种选自三价稀土离子，Bi ，二价碱土金属离子和一价碱金属离子; M包括Nb和Ta中的一种或多种;其中在非取向基底上可以用Ti和Zr形成固溶体）。 所得产物保持在室温至600℃之间的温度。 并且在用紫外线激光等紫外线照射基板上的非晶质薄膜或由有机金属盐或醇盐构成的薄膜的同时进行结晶化。 以这种方式，可以制备定向的Dion-Jacobson钙钛矿型氧化物薄膜，其特征在于薄膜可以在（001）方向上在基板上取向。
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公开(公告)号：US08871363B2
公开(公告)日：2014-10-28
申请号：US13393556
申请日：2010-09-01
IPC分类号： B32B5/14 , B32B9/00 , C01G31/02 , G01J5/20 , H01C3/04 , H01C17/065 , H01C7/02 , G01J5/02 , G01J5/04
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译： 提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞 温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。 通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。
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公开(公告)号：US20130065065A1
公开(公告)日：2013-03-14
申请号：US13640760
申请日：2011-04-12
CPC分类号： C30B1/023 , C03C17/001 , C03C17/23 , C03C2217/23 , C04B35/465 , C04B35/4682 , C04B35/495 , C04B2235/3201 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3291 , C04B2235/3298 , C04B2235/441 , C04B2235/665 , C04B2235/768 , C04B2235/787 , C30B1/04 , C30B1/10 , C30B7/06 , C30B29/30 , H01L41/1871 , H01L41/1873
摘要： A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.
摘要翻译： 在基板上形成包含有机金属盐或醇盐或非晶态薄膜的薄膜，其中每个薄膜能够形成由组成式A表示的Dion-Jacobson钙钛矿型金属氧化物 （Bn-1MnO3n + 1）（其中n为2或更大的自然数; A表示选自Na，K，Rb和Cs中的一种或多种一价阳离子; B包含一种或多种选自三价稀土离子， Bi，二价碱土金属离子和一价碱金属离子; M包括Nb和Ta中的一种或多种;其中固溶体可以用Ti和Zr形成）在非取向基材上。 所得产物保持在室温至600℃之间的温度。 并且在用紫外线激光等紫外线照射基板上的非晶质薄膜或由有机金属盐或醇盐构成的薄膜的同时进行结晶化。 以这种方式，可以制备定向的Dion-Jacobson钙钛矿型氧化物薄膜，其特征在于薄膜可以在（001）方向上在基板上取向。
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5.发明授权Rare earth-Ba-Cu complex composition and method of producing superconductor using same 失效稀土 - Ba-Cu络合物的组成及使用其制造超导体的方法公开(公告)号：US06774088B2
公开(公告)日：2004-08-10
申请号：US10086377
申请日：2002-03-04
申请人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
发明人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
IPC分类号： H01B100
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1295 , Y10S505/70 , Y10S505/734 , Y10S505/741
摘要： A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
摘要翻译： 含有具有稀土元素金属物质，钡和铜以及三氟乙酸或五氟丙酸配体配体，吡啶配体和乙酰丙酮配体的配合物的金属络合物组合物。 可以通过将上述金属络合物组合物的有机溶剂溶液涂布到基材上并通过热处理涂层来获得超导膜。
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6.发明授权公开(公告)号：US06576302B1
公开(公告)日：2003-06-10
申请号：US09513814
申请日：2000-02-25
申请人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
发明人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
IPC分类号： C08J718
CPC分类号： C23C18/14 , C23C18/06 , C23C18/1216
摘要： There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
摘要翻译： 公开了一种金属氧化物的制造方法，该方法包括以下步骤：将金属有机化合物（例如金属有机酸盐，金属乙酰丙酮络合物和具有6个或更多个碳原子的有机基团的金属醇盐） 在溶剂中以提供溶液状态，将溶液施加到基材上，干燥溶液，并使所得基板对波长为400nm以下的激光进行照射，以在基板上形成金属氧化物。 根据该方法，可以在常规已知的应用热分解方法中采用的高温下进行金属氧化物而不进行热处理。
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公开(公告)号：US07771531B2
公开(公告)日：2010-08-10
申请号：US11836387
申请日：2007-08-09
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译： 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素， 在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。
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公开(公告)号：US20080044590A1
公开(公告)日：2008-02-21
申请号：US11839270
申请日：2007-08-15
IPC分类号： C08J7/18
CPC分类号： C09K11/7703 , C03C17/256 , C03C17/3417 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2217/242 , C03C2217/948 , C03C2218/116 , C03C2218/32
摘要： Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
摘要翻译： 提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti，Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。 这种荧光体薄膜的制造方法包括：形成通过添加选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序， Dy，Ho，Er，Tm，Yb和Lu与由组成式ABO 3，A 2 BO 4表示的金属氧化物反应， A 3，B 2 O 7（前提是A，B，O位点可能存在缺陷），其中A是选择的元素 从Ca，Sr和Ba中选出，B是在基板上选自Ti和Zr的金属元素，以及在室温下向紫外灯照射紫外线，然后在保持基板的同时照射紫外线激光的步骤 400℃以下。 在结晶后，将该膜进行氧化处理。
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公开(公告)号：US20080035898A1
公开(公告)日：2008-02-14
申请号：US11836387
申请日：2007-08-09
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译： 提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。 该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素， 在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物 同时照射波长为200nm以下的紫外线。
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公开(公告)号：US5624889A
公开(公告)日：1997-04-29
申请号：US565017
申请日：1995-11-30
IPC分类号： C10M169/06 , C10N10/12 , C10N30/06 , C10N30/08 , C10N40/02 , C10N50/10 , C10M141/06
CPC分类号： C10M169/06 , C10M2201/0606 , C10M2201/0616 , C10M2201/0626 , C10M2201/0656 , C10M2201/0666 , C10M2201/0806 , C10M2201/085 , C10M2201/0856 , C10M2201/0866 , C10M2201/0876 , C10M2201/1013 , C10M2201/1026 , C10M2207/281 , C10M2207/282 , C10M2207/283 , C10M2207/286 , C10M2215/006 , C10M2215/026 , C10M2215/0813 , C10M2215/1013 , C10M2215/102 , C10M2215/1026 , C10M2215/121 , C10M2215/2206 , C10M2215/2275 , C10M2217/044 , C10M2217/045 , C10M2219/066 , C10M2219/068 , C10M2223/045 , C10M2223/047 , C10N2210/06 , C10N2240/00 , C10N2240/02 , C10N2240/22 , C10N2240/30 , C10N2240/50 , C10N2240/52 , C10N2240/54 , C10N2240/56 , C10N2240/58 , C10N2240/60 , C10N2240/66
摘要： A lubricating grease composition includes a grease containing a base oil and a thickening agent consisting of a mixture of tricalcium phosphate represented by the formulaCa.sub.3 (PO.sub.4).sub.2and a urea compound and, incorporated as additives in the grease, (A) a sulfurized molybdenum dialkyldithiocarbamate represented by the formula ##STR1## wherein R.sup.1 and R.sup.2 each independently represents a group selected from the group consisting of alkyl groups having from 1 to 24 carbon atoms; m is 0 or an integer of from 1 to 3; and n is an integer of from 1 to 4; provided that m+n=4, and (B) triphenyl phosphorothionate represented by the formula ##STR2##
摘要翻译： 润滑脂组合物包括含有基础油的润滑脂和由式Ca 3（PO 4）2表示的磷酸三钙和尿素化合物的混合物组成的增稠剂，并且作为添加剂掺入润滑脂中，（A）表示为二烷基二硫代氨基甲酸硫化的硫化钼 其中R 1和R 2各自独立地表示选自具有1至24个碳原子的烷基的基团; m为0或1〜3的整数; n为1〜4的整数， 条件是m + n = 4，和（B）由式“IMAGE”表示的磷酸三苯酯
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