Switch device for laser
    3.
    发明授权
    Switch device for laser 失效
    激光开关装置

    公开(公告)号:US5305338A

    公开(公告)日:1994-04-19

    申请号:US757419

    申请日:1991-09-10

    IPC分类号: H01S3/0971 H01S3/00 H03K17/08

    CPC分类号: H01S3/0971 H01L2924/0002

    摘要: A switch device used for a laser device, includes series-parallel connected switch elements or modules. The switch elements or modules are simultaneously turned on by trigger signals from trigger circuits. The transmission lines for connecting the trigger circuits to respective switch elements are equal to one another in length. A protecting circuit is provided for the switch elements, and indicators are provided for indicating the shortcircuit of the switch elements. In the switch device, the number of wires for the switch elements is made small and heat generated from the switch elements is effectively radiated. The modules are easily stacked, and firmly connected to a control unit for controlling the switch elements. A discharge excited laser device using the switch device has a high efficiency and a long lifetime and is reliable.

    摘要翻译: 用于激光装置的开关装置包括串联并联的开关元件或模块。 开关元件或模块通过来自触发电路的触发信号同时导通。 用于将触发电路连接到各个开关元件的传输线的长度彼此相等。 为开关元件提供保护电路,并且提供用于指示开关元件的短路的指示器。 在开关装置中,用于开关元件的导线的数量变小,并且从开关元件产生的热量被有效地辐射。 模块容易堆叠,并且牢固地连接到用于控制开关元件的控制单元。 使用开关器件的放电激发激光器具有高效率和长寿命,并且是可靠的。

    Discharge-excited laser apparatus
    4.
    发明授权
    Discharge-excited laser apparatus 失效
    放电激发激光装置

    公开(公告)号:US5258994A

    公开(公告)日:1993-11-02

    申请号:US718534

    申请日:1991-06-19

    IPC分类号: H01S3/0971 H01S3/097

    CPC分类号: H01S3/0971

    摘要: A discharge-excited laser apparatus includes a pair of discharge electrodes extending in a direction of an optical axis; a plurality of charging capacitors charged by a power source; a plurality of peaking capacitors arranged in parallel in a longitudinal direction of the discharge electrodes and receiving energy accumulated in the charging capacitors; and a plurality of semiconductor switches arranged with conductive plates in the longitudinal direction of the discharge electrodes and connected in series and in parallel to the peaking capacitors. The construction of the semiconductor switches enables uniform shift of the energy in the charging capacitors to the peaking capacitors and reduction of inductance of a loop for capacity shifting.

    摘要翻译: 放电激励激光装置包括沿光轴方向延伸的一对放电电极; 由电源充电的多个充电电容器; 多个峰值电容器,沿着放电电极的纵向方向平行设置,并且接收蓄积在充电电容器中的能量; 以及多个半导体开关,其沿着放电电极的长度方向排列有导电板,并且与峰值电容器串联并联。 半导体开关的结构使得充电电容器中的能量均匀地移动到峰值电容器,并且减小用于容量偏移的回路的电感。

    Imaging apparatus including a plurality of photoelectric transfer devices
    8.
    发明授权
    Imaging apparatus including a plurality of photoelectric transfer devices 失效
    成像装置包括多个光电转移装置

    公开(公告)号:US07098953B2

    公开(公告)日:2006-08-29

    申请号:US09756191

    申请日:2001-01-09

    IPC分类号: G02B13/16 H04N5/225

    CPC分类号: H04N5/3415 H04N2201/0458

    摘要: An imaging apparatus including at least an imaging device having a plurality of photoelectric transfer devices arranged in matrix-shape to detect a light irradiated to each photoelectric transfer device and transfer to electric signal, and imaging means for imaging an image of a photogenic object on a surface of the imaging devices. The imaging means images at least two similar images of the photogenic subject on different area of the surface of the imaging device, and the imaging apparatus further includes electric signal processing means to form one image of photogenic subject from at least two images of photogenic subject. Since a plurality of images of photogenic subject can be formed on the imaging device by a plurality of image formation lenses, a thinner imaging apparatus can be realized.

    摘要翻译: 一种成像装置,至少包括具有多个光电转移装置的成像装置,所述光电转移装置以矩阵形状排列,以检测照射到每个光电转移装置并转移到电信号的光;以及成像装置,用于将成像物体的图像成像在 成像装置的表面。 成像是指成像装置的表面的不同区域上的成像对象的至少两个相似图像的图像,并且成像装置还包括电信号处理装置,用于从至少两个成像受试者的图像形成成像受试者的一个图像。 由于可以通过多个成像透镜在成像装置上形成多个成像对象的图像,因此可以实现更薄的成像装置。

    Imaging apparatus
    9.
    发明申请
    Imaging apparatus 审中-公开

    公开(公告)号:US20060250514A1

    公开(公告)日:2006-11-09

    申请号:US11482819

    申请日:2006-07-10

    IPC分类号: G02B13/16

    摘要: An imaging apparatus including at least an imaging device having a plurality of photoelectric transfer devices arranged in matrix-shape to detect a light irradiated to each photoelectric transfer device and transfer to electric signal, and imaging means for imaging an image of a photogenic object on a surface of the imaging devices. The imaging means images at least two similar images of the photogenic subject on different area of the surface of the imaging device, and the imaging apparatus further includes electric signal processing means to form one image of photogenic subject from at least two images of photogenic subject. Since a plurality of images of photogenic subject can be formed on the imaging device by a plurality of image formation lenses, a thinner imaging apparatus can be realized.

    Thin film semiconductor device fabrication process
    10.
    发明授权
    Thin film semiconductor device fabrication process 有权
    薄膜半导体器件制造工艺

    公开(公告)号:US06573161B1

    公开(公告)日:2003-06-03

    申请号:US09674645

    申请日:2000-11-02

    IPC分类号: H01L2120

    摘要: A fabrication process is provided for semiconductor devices having a crystalline semiconductor film formed on a substrate, the semiconductor film being an active layer of a transistor and being mainly composed of silicon, and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film. The semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.

    摘要翻译: 本发明提供一种半导体器件的制造方法,该半导体器件具有在基板上形成的结晶半导体膜,该半导体膜是主要由硅组成的晶体管的有源层,并且至少包括形成氧化硅的底层保护层制造步骤 膜作为衬底上的底层保护层; 在衬底保护层上形成主要由硅构成的半导体膜的第一处理步骤; 以及在半导体膜上照射脉冲激光的第二处理步骤。 半导体膜被脉冲激光照射,脉冲激光的波长在370和710nm之间。 结果,使用低温工艺,可以简单可靠地制造高性能薄膜半导体器件。