利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

86 条记录 (耗时 0.021 秒)

    Group III nitride compound semiconductor light emitting device
    2.
    发明授权
    Group III nitride compound semiconductor light emitting device 有权
    III族氮化物化合物半导体发光器件

    公开(公告)号：US07576363B2

    公开(公告)日：2009-08-18

    申请号：US11245448

    申请日：2005-10-07

    申请人： Toshiya Uemura ,  Katsuhisa Sawazaki ,  Masahito Nakai ,  Yuhei Ikemoto

    发明人： Toshiya Uemura ,  Katsuhisa Sawazaki ,  Masahito Nakai ,  Yuhei Ikemoto

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06

    摘要： In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.

    摘要翻译： 在包括n型半导体层的III族氮化物化合物半导体发光器件中，具有超晶格结构的p型半导体层，其中至少包含Al的第一层和与第一层不同的组成的第二层 层，并且插入在n型半导体层和p型半导体层之间的有源层，其中最靠近有源层的第一层的Al组成设置为低于每个 并且其中最靠近有源层的第一层中的p型杂质的掺杂量被设定为小于其它第一层的p型杂质的掺杂量，或 非掺杂

    Group III nitride semiconductor light-emitting element
    4.
    发明申请
    Group III nitride semiconductor light-emitting element 审中-公开
    III族氮化物半导体发光元件

    公开(公告)号：US20110303938A1

    公开(公告)日：2011-12-15

    申请号：US12926837

    申请日：2010-12-13

    申请人： Toshiya Uemura ,  Naoki Arazoe ,  Yuhei Ikemoto

    发明人： Toshiya Uemura ,  Naoki Arazoe ,  Yuhei Ikemoto

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/22 ,  H01L2933/0091

    摘要： A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.

    摘要翻译： 提供了具有提高光提取效率的III族氮化物半导体发光元件。 发光元件在与p型层的p电极接合的一侧的表面上形成有多个点状槽。 凹槽的深度达到n型层。 凹槽的侧表面倾斜，使得元件表面方向的横截面从p型层向n型层减小。 除了形成有n电极的区域以外，在与n型层的n电极接合的一侧的表面上形成微细凹凸，以及折射率为1.5〜2.3的半透明绝缘膜 形成在细微的不规则上。 通过由凹槽向n型层侧反射光并防止通过绝缘膜向n型层侧反射而提高光提取效率。

    Light-emitting semiconductor device and a method of manufacturing it
    5.
    发明授权
    Light-emitting semiconductor device and a method of manufacturing it 有权
    发光半导体装置及其制造方法

    公开(公告)号：US07291868B2

    公开(公告)日：2007-11-06

    申请号：US10564416

    申请日：2004-08-20

    申请人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    发明人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    IPC分类号： H01L29/24

    CPC分类号： B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3086 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/04

    摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.

    摘要翻译： 在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。 在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面 。 通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。 这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。 因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

    Light-emitting semicoductor device and a method of manufacturing it
    6.
    发明申请
    Light-emitting semicoductor device and a method of manufacturing it 有权
    发光半导体器件及其制造方法

    公开(公告)号：US20060163585A1

    公开(公告)日：2006-07-27

    申请号：US10564416

    申请日：2004-08-20

    申请人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    发明人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    IPC分类号： H01L33/00

    CPC分类号： B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3086 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/04

    摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.

    摘要翻译： 在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。 在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面 。 通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。 这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。 因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

    Method of making group III nitride compound semiconductor light emitting element
    9.
    发明授权
    Method of making group III nitride compound semiconductor light emitting element 失效
    制备III族氮化物化合物半导体发光元件的方法

    公开(公告)号：US07078252B2

    公开(公告)日：2006-07-18

    申请号：US11130153

    申请日：2005-05-17

    申请人： Toshiya Uemura

    发明人： Toshiya Uemura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48247

    摘要： A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.

    摘要翻译： III族氮化物系化合物半导体发光元件具有：在表面上具有凹部的透明基板; 填充材料，其嵌入在所述凹部中; 以及形成在所述透明基板的表面上的III族氮化物系化合物半导体层。 填充材料的折射率基本上等于III族氮化物系化合物半导体层的折射率，或者比III族氮化物系化合物半导体层的折射率高于透明基板的折射率。