摘要:
A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole. A semiconductor device of the present invention includes the above insulating layer.
摘要:
A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole. A semiconductor device of the present invention includes the above insulating layer.
摘要:
A resin composition of the present invention is used for providing a spacer 104 having a grid-like shape at a planar view thereof between a semiconductor wafer 101′ and a transparent substrate 102. The resin composition includes a constituent material containing an alkali soluble resin, a thermosetting resin and a photo initiator. In the case where a semiconductor wafer 101′ and a transparent substrate 102 are bonded together through a spacer 104 formed on a substantially overall surface thereof to obtain a bonded body 2000, and then the semiconductor wafer makes one-fifth thickness, a warpage of the bonded body 2000 is 3,000 μm or less. Further, it is preferred that the warpage of the bonded body 2000 before the process thereof is 500 μm or less, and an increasing ratio of the warpage of the bonded body 2000 after the process thereof is 600% or less.
摘要:
A spacer formation film is adapted to be used for forming a spacer defining air-gap portions on a side of one surface of a semiconductor wafer and by being cut into a desired shape, the spacer formation film includes: a support base having a sheet-like shape; a spacer formation layer provided on the support base and having a bonding property, the spacer formation layer formed of a material containing an alkali soluble resin, a thermosetting resin and a photo polymerization initiator; and a cutting line along which the spacer formation film is to be cut, wherein the spacer formation layer is provided inside the cutting line so that a peripheral edge thereof is not overlapped to the cutting line.
摘要:
A method of manufacturing a semiconductor wafer bonding product according to the present invention includes: a step of preparing a spacer formation film including a support base having a sheet-like shape and a spacer formation layer provided on the support base and having photosensitivity; a step of attaching the spacer formation layer to a semiconductor wafer having one surface from a side of the one surface; a step of forming a spacer by subjecting exposure and development to the spacer formation layer to be patterned and removing the support base; a step of bonding a transparent substrate to a region of the spacer, with which the removed support base made contact, so as to be included within the region. This makes it possible to manufacture a semiconductor wafer bonding product in which the semiconductor wafer and the transparent substrate are bonded together through the spacer uniformly and reliably.
摘要:
A method of manufacturing a semiconductor wafer bonding product according to the present invention, including: a step of preparing a spacer formation film including a support base and a spacer formation layer; a step of attaching the spacer formation layer of the spacer formation film to a semiconductor wafer; a step of selectively exposing the spacer formation layer with an exposure light via a mask, which is placed at a side of the support base of the spacer formation film, so as to be passed through the support base; a step of removing the support base; a step of developing the spacer formation layer to form a spacer on the semiconductor wafer; and a step of bonding a transparent substrate to a surface of the spacer opposite to the semiconductor wafer.
摘要:
A method of manufacturing a semiconductor wafer bonding product according to the present invention includes: a step of preparing a spacer formation film including a support base having a sheet-like shape and a spacer formation layer provided on the support base and having photosensitivity; a step of attaching the spacer formation layer to a semiconductor wafer having one surface from a side of the one surface; a step of forming a spacer by subjecting the spacer formation layer to exposure and development to be patterned and removing the support base; and a step of bonding a transparent substrate to a region of the spacer where the removed support base was provided so that transparent substrate is included within the region. This makes it possible to manufacture a semiconductor wafer bonding product in which the semiconductor wafer and the transparent substrate are bonded together through the spacer uniformly and reliably.
摘要:
According to one aspect of the present invention, a film for a resin spacer (10) comprises an adhesive layer (12) made of a resin composition and a cover film (14) covering a surface of the adhesive layer (12). In the above-described film for a resin spacer (10), an adhesion force C1 between the adhesive layer (12) and the cover film (14) and an adhesion force D between the adhesive layer (12) and a silicone resin are set so as to satisfy the condition C1>D. Consequently, it is possible to reduce resin adherence to a cutting table at the time of cutting the film for a resin spacer (10).
摘要:
An object of the present invention is to provide a photosensitive resin composition which leaves a small amount of resin residues after patterning by light-exposure and development and can reduce condensation between the semiconductor wafer and the transparent substrate under a high temperature and high humidity environment, an adhesive film made of the photosensitive resin composition and a light-receiving device including the adhesive film. The photosensitive resin composition of the present invention contains an alkali soluble resin (A), a photopolymerization initiator (B) and a compound (C) having a phenolic hydroxyl group and a carboxyl group.
摘要:
A semiconductor wafer bonding product according to the present invention includes: a semiconductor wafer; a transparent substrate provided at a side of a functional surface of the semiconductor wafer; a spacer provided between the semiconductor wafer and the transparent substrate; and a bonded portion continuously provided along a periphery of the semiconductor wafer, the transparent substrate being bonded to the semiconductor wafer through the bonded portion. It is preferred that a minimum width of the bonded portion is 50 μm or more.