摘要:
The present invention enables the accurate management of the total number of spotting counts for each spotting pin. An IC chip is installed on the spotting pin to allow the IC chip to accumulate spotting-count information, and during each spotting time the information is loaded up and displayed.
摘要:
The present invention aims at minimizing the influence of residual fluorescence emitted from adjacent spots, upon reading time-resolved fluorescence. The path of laser beam scan is set to be intermittent such that residual fluorescence from adjacent spots gives no effect. In other words, the spots are read in a skipping manner.
摘要:
Identically shaped spots can be formed sequentially and stably by a spotting pin comprising a bar-like plunger 20. Four projections each formed in the shape of a top portion of a quadrangular pyramid are formed on the head of the plunger 20. The apexes 21 of the quadrangular pyramids constituting the projections are located inside a virtual plane extending from the peripheral wall of the plunger.
摘要:
A spotting pin 10 capable of spotting equal amounts of a solution in a sequential manner comprises a first member 11 having a solution holding portion 13 formed at the tip thereof for holding a predetermined amount of solution, and a second member 12 having a solution supply portion 14 for holding the solution by a capillary action, the second member adapted to slide along the first member. As the solution supply portion 14 is brought into contact with the solution holding portion 13, the solution enters the solution holding portion 13 from the solution supply portion 14 by a capillary action. As the solution supply portion 14 and the solution holding portion 13 are separated from each other, a predetermined amount of the solution can be carried in the solution holding portion 13. Then, as the solution holding portion 13 is brought into contact with a water-absorbing support 21, a spot 22 of a predetermined amount of the solution can be formed thereon.
摘要:
The present invention provides a high-sensitive, inexpensive biochip reader for reading a biochip as compared to a fluorescence method. The biochip reader is provided with an X-Y stage (3) for mounting a biochip (6) and scanning the biochip (6) in a two-dimensional manner, a controller (4) for the X-Y stage, a magnetic sensor (1) for reading the magnetic field strength, an ohmmeter (2), and a computer (5) for signal processing. As a result, a high-performance, inexpensive biochip reader can be provided without using an expensive laser or an expensive optical system, by employing a magnetic sensor and a disk driving mechanism generally used in a hard disk drive and the like.
摘要:
A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.
摘要:
A showerhead for use in a process chamber for performing a predetermined process on an object, designed to apply a prescribed gas in the process chamber. The showerhead comprises a main body, a cover, and a support. The main body has a an internal space into which the gas to be supplied into the process chamber is introduced and an opening which opens to the process chamber. The cover closes the opening of the main body and has a plurality of gas-applying holes for applying the gas from the main body. The support supports the cover to the main body and provides a predetermined clearance between the cover and the main body.
摘要:
A system for cleaning and film-forming a semiconductor wafer continuously comprises a washing section for removing native oxide from the surface of the wafer while applying hydrofluoric acid to the silicon wafer, a load lock chamber located adjacent to the washing section and filled with the atmosphere of non-oxidizing gas, a film-forming section communicated with and shielded from the load lock chamber by a gate valve to form film on that face of the wafer which is to be processed, a first transfer robot for transferring the wafer between the washing section and the load lock chamber, and a second transfer robot for transferring the wafer between the load lock chamber and the film-forming section. Film is formed on the wafer in the film-forming section after the native oxide is removed from the wafer.
摘要:
A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要:
A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).