利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.028 秒)

    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
    1.
    发明申请
    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
    后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力

    公开(公告)号：US20070054504A1

    公开(公告)日：2007-03-08

    申请号：US11221303

    申请日：2005-09-07

    申请人： Xiaolin Chen ,  Srinivas Nemani ,  DongQing Li ,  Jeffrey Munro ,  Marlon Menezes

    发明人： Xiaolin Chen ,  Srinivas Nemani ,  DongQing Li ,  Jeffrey Munro ,  Marlon Menezes

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

    摘要翻译： 描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。 在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置，并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力 。 本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。 在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置 暴露于等离子体。

    RADICAL STEAM CVD
    2.
    发明申请
    RADICAL STEAM CVD 审中-公开
    放射性CVD

    公开(公告)号：US20120177846A1

    公开(公告)日：2012-07-12

    申请号：US13236388

    申请日：2011-09-19

    申请人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

    发明人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

    IPC分类号： C23C16/40 ,  C23C16/56 ,  C23C16/50

    CPC分类号： C23C16/308 ,  C23C16/045 ,  C23C16/452 ,  C23C16/56

    摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

    摘要翻译： 描述形成氧化硅层的方法。 这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。 可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

    Conformal layers by radical-component CVD
    3.
    发明授权
    Conformal layers by radical-component CVD 有权
    通过自由基成分CVD形成保形层

    公开(公告)号：US08563445B2

    公开(公告)日：2013-10-22

    申请号：US13024487

    申请日：2011-02-10

    申请人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    发明人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    IPC分类号： H01L21/469

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/76837

    摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

    摘要翻译： 描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。 主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。 由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。 沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。 可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。 已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
    4.
    发明授权
    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
    后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力

    公开(公告)号：US07465680B2

    公开(公告)日：2008-12-16

    申请号：US11221303

    申请日：2005-09-07

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

    摘要翻译： 描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。 在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力 。 本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。 在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置 暴露于等离子体。

    CONFORMAL LAYERS BY RADICAL-COMPONENT CVD
    6.
    发明申请
    CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 有权
    通过放射性元素CVD的合适层

    公开(公告)号：US20110217851A1

    公开(公告)日：2011-09-08

    申请号：US13024487

    申请日：2011-02-10

    申请人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    发明人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/76837

    摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

    摘要翻译： 描述了用于形成含有硅和氮的保形介电层（例如，硅 - 氮（Si-N-H）膜）的方法，材料和系统，其由无碳硅氮前驱体和自由基 - 氮 前体 主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。 由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。 沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。 可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。 已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

    POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2
    8.
    发明申请
    POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2 失效
    后沉积等离子体处理以提高HDP-CVD SIO2的拉伸应力

    公开(公告)号：US20090035918A1

    公开(公告)日：2009-02-05

    申请号：US12252260

    申请日：2008-10-15

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/76

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.

    摘要翻译： 描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。 在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。 沟槽被蚀刻到衬底中。 将基底转移到适合于电介质沉积的室中。 介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。 将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。 从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。 去除氮化物层和衬垫氧化物层以形成STI结构。

    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
    10.
    发明授权
    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
    后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力

    公开(公告)号：US07745351B2

    公开(公告)日：2010-06-29

    申请号：US12252260

    申请日：2008-10-15

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.

    摘要翻译： 描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。 在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。 沟槽被蚀刻到衬底中。 将基底转移到适合于电介质沉积的室中。 介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。 将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。 从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。 去除氮化物层和衬垫氧化物层以形成STI结构。