公开(公告)号：US20080176008A1

公开(公告)日：2008-07-24

申请号：US12010181

申请日：2008-01-22

申请人： Xinming Wang ,  Akira Owatari ,  Takashi Koba ,  Tsutomu Nakada ,  Akira Fukuda

发明人： Xinming Wang ,  Akira Owatari ,  Takashi Koba ,  Tsutomu Nakada ,  Akira Fukuda

IPC分类号： H01F10/08

CPC分类号： H01F41/24 ,  C23C18/161 ,  C23C18/1673 ,  C23C18/1879 ,  C23C18/36

摘要： A magnetic film forming apparatus can form a magnetic film, especially a magnetic alloy film, selectively on a metal surface exposed on a surface of a substrate, such as a semiconductor wafer. The magnetic film forming apparatus comprises an electroless plating apparatus having a magnetic field generation apparatus for generating a magnetic field around and parallel to a substrate disposed such that the surface of the substrate is in contact with a plating solution in a plating tank.

摘要翻译： 磁性膜形成装置可以在暴露在诸如半导体晶片的基板的表面上的金属表面上选择性地形成磁性膜，特别是磁性合金膜。 磁性膜形成装置包括具有磁场产生装置的化学镀设备，用于产生围绕并平行于基板的磁场，该基板设置成使得基板的表面与电镀槽中的镀液接触。

公开(公告)号：US07498261B2

公开(公告)日：2009-03-03

申请号：US11219777

申请日：2005-09-07

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/32 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874

摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

摘要翻译： 本发明的金属成膜方法可以使用单一的处理液以连续的方式形成厚度方向的膜质量不同的金属膜。 所述金属成膜方法包括：提供具有形成在所述基板的表面中的互连凹槽中的嵌入式互连的基板; 并且通过在保持基板的表面与基板的表面接触的同时改变处理液相对于基板的表面的流动状态，以连续的方式在相互连接的表面上形成在厚度方向上具有不同膜质量的金属膜 处理方案。

公开(公告)号：US20050245080A1

公开(公告)日：2005-11-03

申请号：US11039967

申请日：2005-01-24

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

IPC分类号： C23C18/16 ,  C23C18/18 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US20050208774A1

公开(公告)日：2005-09-22

申请号：US11029675

申请日：2005-01-06

申请人： Akira Fukunaga ,  Akira Owatari ,  Masahiko Sekimoto ,  Xinming Wang

发明人： Akira Fukunaga ,  Akira Owatari ,  Masahiko Sekimoto ,  Xinming Wang

IPC分类号： C23C18/16 ,  C23C18/18 ,  C23F1/00 ,  C23G1/08 ,  C23G1/10 ,  C23G3/02 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/768

CPC分类号： H01L21/67086 ,  C23C18/1619 ,  C23C18/1893 ,  C23G1/088 ,  C23G1/103 ,  C23G3/023 ,  C23G3/026 ,  C23G3/027 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/288 ,  H01L21/6708 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874

摘要： A substrate wet-processing method can carry out uniform chemical processing of the surface of a substrate while easily preventing a gas from remaining on the surface of the substrate and preventing difference in the concentration and the temperature of a chemical solution between the end portion and the central portion of the substrate. The substrate wet-processing method includes: providing an acidic solution whose concentration is previously adjusted within a predetermined concentration range; continuously spraying the acidic solution having the adjusted concentration toward a substrate at a predetermined pressure to bring it into contact with a surface of the substrate; and then forming a film of an insulating material, a metal or an alloy on the exposed surface of a metal formed in the surface of the substrate.

摘要翻译： 基板湿法处理方法可以对基板表面进行均匀的化学处理，同时容易地防止气体残留在基板的表面上，并且防止端部和端部之间的化学溶液的浓度和温度的差异 基板的中心部分。 底物湿法处理方法包括：提供浓度预先调节在预定浓度范围内的酸性溶液; 将具有调整浓度的酸性溶液以预定压力连续喷射到基板，使其与基板的表面接触; 然后在形成在基板的表面的金属的暴露表面上形成绝缘材料，金属或合金的膜。

公开(公告)号：US20080067679A1

公开(公告)日：2008-03-20

申请号：US11663351

申请日：2005-09-22

申请人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

发明人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

IPC分类号： H01L23/52 ,  H01B1/02 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  C23C18/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.

摘要翻译： 半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小 。 半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜， 硼，通过在至少部分嵌入式互连件上的无电镀形成。

公开(公告)号：US20060057839A1

公开(公告)日：2006-03-16

申请号：US11219777

申请日：2005-09-07

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

IPC分类号： H01L21/4763 ,  H01L21/20

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/32 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874

摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

公开(公告)号：US20080138508A1

公开(公告)日：2008-06-12

申请号：US11885870

申请日：2006-03-06

申请人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Masanori Ishizaka ,  Akira Fukunaga

发明人： Daisuke Takagi ,  Xinming Wang ,  Akira Owatari ,  Masanori Ishizaka ,  Akira Fukunaga

IPC分类号： B05D5/12 ,  B05C3/02 ,  C09D5/00

CPC分类号： C23C18/1844 ,  C23C18/1653 ,  C23C18/168 ,  H01L21/288 ,  H01L21/76849

摘要： A substrate processing method is useful for forming, by electroless plating, a protective film, such as a magnetic film, which covers exposed surfaces of embedded interconnects composed of an interconnect material, such as copper or silver, embedded in fine interconnect recesses provided in a surface of a substrate. The substrate processing method includes bringing a surface of a substrate into contact with a processing solution whose temperature is adjusted to not more than 15° C., thereby activating the surface, and bringing the activated surface of the substrate into contact with a plating solution, thereby forming a metal film on the surface.

摘要翻译： 基板处理方法可用于通过无电镀形成诸如磁性膜的保护膜，该保护膜覆盖由诸如铜或银的互连材料（例如铜或银）组成的嵌入式互连件的暴露表面，该互连材料嵌入在设置在 基材表面。 基板处理方法包括使基板的表面与温度调整为15℃以下的处理液接触，从而使表面活化，使基板的活化面与电镀液接触， 从而在表面上形成金属膜。

公开(公告)号：US20100075498A1

公开(公告)日：2010-03-25

申请号：US12629332

申请日：2009-12-02

申请人： Daisuke TAKAGI ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

发明人： Daisuke TAKAGI ,  Xinming Wang ,  Akira Owatari ,  Akira Fukunaga ,  Akihiko Tashiro

IPC分类号： H01L21/3205

CPC分类号： H01L23/53238 ,  C23C18/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects.

摘要翻译： 半导体器件具有被合金膜保护的互连，所述合金膜具有为了产生防止在衬底的整个表面上更均匀地形成的氧，铜等的扩散所必需的最小厚度，而对衬底的互连图案的依赖性较小 。 半导体器件包括通过将互连材料填充到形成在基板上的电绝缘体中的互连凹槽中形成的嵌入式互连，以及包含1至9原子％的钨或钼和3至12原子％的磷的合金膜， 硼，通过在至少部分嵌入式互连件上的无电镀形成。

公开(公告)号：US20080000776A1

公开(公告)日：2008-01-03

申请号：US11896071

申请日：2007-08-29

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

IPC分类号： C25D5/00 ,  B05D3/12

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US07285492B2

公开(公告)日：2007-10-23

申请号：US11039967

申请日：2005-01-24

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka ,  Tsuyoshi Sahoda

IPC分类号： H01L21/44

CPC分类号： H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

摘要翻译： 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。