摘要:
Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要:
A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
摘要:
Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要:
A method of forming a bump structure, comprising the following steps. A structure having an exposed first conductive structure is provided. A first photoresist layer is formed over the structure and the exposed first conductive structure. A second capping photoresist layer is formed over the first photoresist layer. The first and second photoresist layers being comprised of different photoresist materials. The first and second photoresist layers are patterned to form an opening through the first and second photoresist layers and over the first conductive structure. The second capping photoresist layer prevents excessive formation of first photoresist layer residue during processing. A second conductive structure is formed within the opening. The first and second patterned photoresist layers are stripped. The second conductive structure is reflowed to form the bump structure.
摘要:
A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.
摘要:
Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要:
A method for forming an under bump metal, comprising the following steps. A semiconductor structure is provided having an exposed I/O pad. A patterned passivation layer is formed over the semiconductor structure, the patterned passivation layer having an opening exposing a first portion of the I/O pad. A dry film resistor (DFR) layer is laminated, exposed and developed to form a patterned dry film resistor (DFR) layer over the patterned passivation layer. The patterned dry film resistor (DFR) layer having an opening exposing a second portion of the I/O pad. The patterned dry film resistor (DFR) layer opening having opposing side walls with a predetermined profile with an undercut. A metal layer is formed over the patterned dry film resistor (DFR) layer, the exposed third portion of the I/O pad, and over at least a portion of the opposing side walls of the patterned dry film resistor (DFR) layer opening. The patterned dry film resistor (DFR) layer is lifted off, along with the metal layer over patterned dry film resistor (DFR) layer and over at least the portion of the opposing side walls, leaving the metal layer over the exposed second portion of the I/O pad. The metal layer over the exposed second portion of the I/O pad being an under bump metal.
摘要:
Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.
摘要:
A method for bumping and backlapping a semiconductor wafer that has a multiplicity of solder bumps formed on an active surface of the wafer is disclosed. In the method, a preprocessed wafer that has a multiplicity of bond pads formed on a top surface is first provided, a under-bump-metallurgy (UBM) layer is then sputter deposited on top of the wafer surface, followed by the lamination of a dry film resist layer on top of the UBM layer. The dry film resist layer is then patterned with a multiplicity of openings exposing the multiplicity of bond pads, followed by the deposition of a solder material into the multiplicity of openings to form the solder bump's. A protective tape is then adhesively bonded to the top of the dry film resist layer before the wafer is positioned into a backlapping apparatus for removing of a preselected thickness from the backside of the wafer. After the completion of the backside lapping process, the protective tape and the dry film resist layer are stripped away sequentially and the solder bumps are reflown into solder balls. The present invention novel method effectively prevents any damages to. the solder balls during the backlapping process since the solder bumps are well protected by the dry film resist layer during such process.
摘要:
Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.