公开(公告)号：US5632811A

公开(公告)日：1997-05-27

申请号：US420519

申请日：1995-04-12

申请人： Yasuo Namikawa ,  Yasuji Yamada ,  Satoshi Koyama ,  Yuh Shiohara ,  Shoji Tanaka

发明人： Yasuo Namikawa ,  Yasuji Yamada ,  Satoshi Koyama ,  Yuh Shiohara ,  Shoji Tanaka

IPC分类号： C30B9/00 ,  C30B15/00 ,  C30B15/12 ,  C30B29/22 ,  H01B13/00 ,  H01L21/208 ,  C30B29/16

CPC分类号： C30B29/225 ,  C30B15/12 ,  C30B9/00

摘要： In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature. The second crucible is made of a material substantially causing neither melting nor chemical reaction with respect to the oxide-based melt, which can retain the melt more stably than the first material. Even if the melt overflows the first crucible, this overflow is suppressed by the second crucible. It is possible to prepare a crystal of an oxide superconductor such as YBa.sub.2 Cu.sub.3 O.sub.7-x (0.ltoreq.X.ltoreq.1) by the pulling method from the melt which is stored in the first crucible.

摘要翻译： 为了稳定地保持基本上由钇或镧系元素，钡，铜和氧组成的氧化物基熔体，在规定的温度下没有杂质污染，从而从熔体制备高质量的大的氧化物晶体，基本上由 的钇或镧系元素，钡，铜和氧储存在第一坩埚中，第一坩埚又保持在第二坩埚中。 第一坩埚由至少一种形成熔体的元素的氧化物的材料制成，其熔点比熔融保持温度高至少10℃，并且不会导致结构相变达到高于10℃的温度 ℃以上的规定温度，相对于熔体，在室温至高于熔融保持温度10℃的温度范围内的溶解度为5原子％以下。 第二坩埚由相对于基于氧化物的熔体基本上不熔化和化学反应的材料制成，其可以比第一材料更稳定地保持熔体。 即使熔体溢出第一坩埚，这种溢流被第二坩埚抑制。 可以通过从存储在第一坩埚中的熔体的拉伸方法制备氧化物超导体的晶体，例如YBa2Cu3O7-x（0≤X1）。

公开(公告)号：US5707441A

公开(公告)日：1998-01-13

申请号：US569895

申请日：1995-12-08

申请人： Yasuo Namikawa ,  Yuh Shiohara ,  Shoji Tanaka

发明人： Yasuo Namikawa ,  Yuh Shiohara ,  Shoji Tanaka

IPC分类号： C01G1/00 ,  C01G3/00 ,  C01G3/02 ,  C30B15/00 ,  C30B15/20 ,  C30B15/22 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00

CPC分类号： C30B29/225 ,  C30B15/20 ,  Y10T117/1004

摘要： In order to prepare a large yttrium or lanthanoid based oxide superconductor crystal of higher quality, a method and an apparatus which can stably control the shape of a pulled crystal and stably maintain growth of the crystal from a melt are provided. A crystal of an oxide having a structure of RBa.sub.2 Cu.sub.3 O.sub.7-X (R: yttrium or lanthanoid element, 0.ltoreq.X.ltoreq.1) is pulled from a raw material melt which is stored in a crucible by a rotary crystal pulling shaft. During such pulling, a position of the surface of the raw material melt is measured with time to obtain a lowering speed of the surface in a direction substantially parallel to the crystal pulling direction, for adjusting the lifting speed of the crystal pulling shaft by this lowering speed.

摘要翻译： 为了制备更高质量的大型钇或镧系氧化物超导体晶体，提供了可以稳定地控制拉晶体的形状并稳定地保持晶体从熔体生长的方法和装置。 具有RBa2Cu3O7-X（R：钇或镧系元素，0

公开(公告)号：US5846323A

公开(公告)日：1998-12-08

申请号：US725939

申请日：1996-10-08

申请人： Masahiro Egami ,  Yuh Shiohara ,  Yasuo Namikawa

发明人： Masahiro Egami ,  Yuh Shiohara ,  Yasuo Namikawa

IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B29/22 ,  C30B35/00

CPC分类号： C30B29/22 ,  C30B15/26 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1088

摘要： A crystal pulling apparatus is designed to generate a thermal gradient across the melt surface to prevent nucleation of stray crystals and production of floating debris to produce a high quality crystal, and has special provisions for observing the growth behavior and crystal dimension measurements. The apparatus includes a cylindrical chamber, a crucible disposed centrally within the chamber, a cylindrical heater surrounding the crucible, an insulation member disposed on the top section of the crucible, a first transparent plate and a second transparent plate for closing the center hole in the insulation member, a pull rod passing through the center hole of the transparent plates, a crystal illumination mechanism, a crystal size determination mechanism and an ambient atmosphere flowing mechanism. The crystal size determination mechanism is provided with a quartz prism, an infrared transmitting filter on a side wall of the chamber, a revolution count circuit, phase angle setting circuit, a CCD camera, an image processing section, and a crystal size determination device having a TV monitor.

摘要翻译： 设计了一种晶体拉制装置，以在熔体表面上产生热梯度，以防止杂散晶体的成核和浮选碎屑的产生，产生高质量的晶体，并且具有观察生长行为和晶体尺寸测量的特殊规定。 该装置包括圆柱形腔室，设置在腔室中心的坩埚，围绕坩埚的圆柱形加热器，设置在坩埚顶部的绝缘构件，第一透明板和第二透明板，用于封闭坩埚中的中心孔 绝缘构件，穿过透明板的中心孔的拉杆，晶体照明机构，晶体尺寸确定机构和环境大气流动机构。 晶体尺寸确定机构设置有石英棱镜，在室的侧壁上的红外透射滤光器，转数计算电路，相位角设置电路，CCD照相机，图像处理部分和晶体尺寸确定装置，其具有 电视监视器。

公开(公告)号：US5851956A

公开(公告)日：1998-12-22

申请号：US726917

申请日：1996-10-07

申请人： Yasuo Namikawa ,  Xin Yao ,  Masahiro Egami ,  Yuh Shiohara

发明人： Yasuo Namikawa ,  Xin Yao ,  Masahiro Egami ,  Yuh Shiohara

IPC分类号： C01G1/00 ,  C01G3/00 ,  C30B15/00 ,  C30B29/22 ,  C30B15/02

CPC分类号： C30B29/225 ,  C30B15/00 ,  Y10S505/729

摘要： A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.

摘要翻译： 通过增加晶体生长的速度而不影响晶体生长，制造高质量的大的氧化物晶体。 将放置在坩埚中的作为原料的BaO-CuO的熔体在Y2BaCuO5的固相沉淀物的存在下加热熔融并保持在规定的温度。 此后，晶种在旋转的同时被拉起，晶种与熔体的表面接触，由此得到具有YBa2Cu3O7-x结构的氧化物晶体，该生长氧化物晶体的气氛具有氧气 分压比环境气氛高。

公开(公告)号：US08921903B2

公开(公告)日：2014-12-30

申请号：US12517761

申请日：2007-09-21

申请人： Takeyoshi Masuda ,  Yasuo Namikawa

发明人： Takeyoshi Masuda ,  Yasuo Namikawa

IPC分类号： H01L29/808 ,  H01L29/66 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/808 ,  H01L21/048 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66901

摘要： On a p− epitaxial layer, an n-type epitaxial layer and a gate region are formed in this order. A gate electrode is electrically connected to the gate region, and a source electrode and a drain electrode are spaced apart from each other with the gate electrode sandwiched therebetween. A control electrode is used for applying to the p− epitaxial layer a voltage that causes a reverse biased state of the p− epitaxial layer and the n-type epitaxial layer in an OFF operation.

摘要翻译： 在p-外延层上依次形成n型外延层和栅极区。 栅电极电连接到栅极区，源电极和漏极彼此间隔开，栅电极夹在其间。 控制电极被用于向p-外延层施加一个电压，该电压导致p型外延层和n型外延层在OFF操作中的反向偏压状态。

公开(公告)号：US20120061686A1

公开(公告)日：2012-03-15

申请号：US13319560

申请日：2010-04-27

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate 1 is a silicon carbide substrate capable of making effective use of silicon carbide single crystal.

摘要翻译： 允许降低制造包括碳化硅衬底的半导体器件的成本的碳化硅衬底包括由碳化硅构成的基底衬底和由与基底基板不同的单晶碳化硅构成的SiC层，并与基底衬底接触地布置 。 因此，碳化硅衬底1是能够有效利用碳化硅单晶的碳化硅衬底。

公开(公告)号：US20120009761A1

公开(公告)日：2012-01-12

申请号：US13256991

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： C30B29/36 ,  C30B33/06

摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

公开(公告)号：US20120003823A1

公开(公告)日：2012-01-05

申请号：US13255314

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02614 ,  H01L21/02656 ,  H01L21/02667 ,  H01L21/047 ,  H01L29/66068

摘要： A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed.

摘要翻译： 制备具有支撑部分和第一和第二碳化硅衬底的组合衬底。 第一碳化硅衬底具有第一正面和第一侧面。 第二碳化硅衬底具有第二前侧表面和第二侧表面。 第二侧面设置成在第一侧表面和第二侧表面之间形成有在第一和第二前侧表面之间具有开口的间隙。 通过将来自开口的熔融硅引入到间隙中，形成硅连接部，以连接第一和第二侧表面以封闭开口。 通过碳化硅连接部分，形成碳化硅连接部分。

公开(公告)号：US20110306181A1

公开(公告)日：2011-12-15

申请号：US13202437

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L21/762

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

摘要： A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside.

摘要翻译： 制造碳化硅衬底的方法包括以下步骤：制备由碳化硅形成的基底衬底和由单晶碳化硅形成的SiC衬底; 通过堆叠基底基板和SiC基板以使它们的主表面彼此接触来制造堆叠的基板; 加热堆叠的基板以连接基底基板和SiC基板，从而制造接合的基板; 并且加热接合的基板，使得在基底基板和SiC基板之间形成温度差，从而将在基底基板和SiC基板之间的界面处制造接合基板的步骤中形成的空隙排出到外部。

公开(公告)号：US20100044721A1

公开(公告)日：2010-02-25

申请号：US12526731

申请日：2008-08-21

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Yasuo Namikawa ,  Takeyoshi Masuda

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Yasuo Namikawa ,  Takeyoshi Masuda

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L21/67109 ,  H01L29/45 ,  H01L29/66068 ,  Y10T117/1068 ,  Y10T117/1088

摘要： The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface roughening of the wafer in the heat treatment step and a semiconductor device in which the worsening of the property caused by the surface roughening is suppressed. The method of producing a MOSFET as a semiconductor device is provided with a step of preparing a wafer 3 made of silicon carbide and an activation annealing step that performs activation annealing by heating the wafer 3. In the activation annealing step, the wafer 3 is heated in an atmosphere containing a vapor of silicon carbide generated from the SiC piece 61, which is a generating source other than the wafer 3.

摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件能够通过在热处理步骤中充分抑制晶片的表面粗糙化以及其中性能恶化的半导体器件来抑制由于晶片的表面粗糙而导致的性能恶化 造成表面粗糙度受到抑制。 制造作为半导体器件的MOSFET的方法具有制备由碳化硅制成的晶片3的步骤和通过加热晶片3进行活化退火的活化退火步骤。在活化退火步骤中，晶片3被加热 在包含由除了晶片3之外的发生源的SiC片61产生的碳化硅蒸气的气氛中。