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公开(公告)号：US20120298329A1
公开(公告)日：2012-11-29
申请号：US13221987
申请日：2011-08-31
Applicant: Yi-Chieh Lin , Yu-Jing Lin
Inventor： Yi-Chieh Lin , Yu-Jing Lin
IPC: F28F7/00
CPC classification number: G06F1/20
Abstract: An air flow adjusting frame for a heat sink device which includes a first fixing plate and a second fixing plate is disclosed. The first fixing plate is fixed to a heat dissipation fin with the second fixing plate pivoted to the first fixing plate. Besides, the second fixing plate is for being fixed to a fan. An air flow angle of the fan is adjusted through the air flow adjusting frame.
Abstract translation: 公开了一种用于散热装置的气流调节框架，其包括第一固定板和第二固定板。 第一固定板固定在散热翅片上，第二固定板枢转到第一固定板。 此外，第二固定板用于固定在风扇上。 通过气流调节框架调节风扇的气流角度。
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公开(公告)号：US20090256159A1
公开(公告)日：2009-10-15
申请号：US12382955
申请日：2009-03-27
Applicant: Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
Inventor： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.
Abstract translation: 本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。 因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。 因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。
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公开(公告)号：US09048376B2
公开(公告)日：2015-06-02
申请号：US12962108
申请日：2010-12-07
Applicant: Yi-Chieh Lin , Shih-Chang Lee
Inventor： Yi-Chieh Lin , Shih-Chang Lee
IPC: H01L31/06 , H01L31/18 , H01L31/052 , H01L31/0725 , H01L31/0735 , H01L31/054
CPC classification number: H01L31/1892 , H01L31/052 , H01L31/0543 , H01L31/0725 , H01L31/0735 , H01L31/1852 , Y02E10/52 , Y02E10/544
Abstract: A multi-junction solar cell device includes a substrate having a first lattice constant, a first optoelectronic conversion layer having a second lattice constant, and a second optoelectronic conversion layer having a third lattice constant wherein the value of the first lattice constant is between that of the second lattice constant and the third lattice constant.
Abstract translation: 多结太阳能电池器件包括具有第一晶格常数的衬底，具有第二晶格常数的第一光电转换层和具有第三晶格常数的第二光电转换层，其中第一晶格常数的值在 第二晶格常数和第三晶格常数。
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公开(公告)号：US20120212394A1
公开(公告)日：2012-08-23
申请号：US13151279
申请日：2011-06-02
Applicant: Yi-Chieh Lin , Kun-Hsien Lee , Hung-Yuan Lin , San-Yi Kuo
Inventor： Yi-Chieh Lin , Kun-Hsien Lee , Hung-Yuan Lin , San-Yi Kuo
IPC: H01Q1/12
CPC classification number: H01Q1/125 , H01Q1/1228
Abstract: An antenna support device for supporting an antenna is disclosed. The antenna support device includes a support arm, a holder mounted on the support arm, a first connecting member rotatably connected to the holder around a first axis, a second connecting member rotatably connected to the first connecting member around a second axis, and an antenna bracket fixed on the second connecting member, wherein the antenna is fixed on the antenna bracket.
Abstract translation: 公开了一种用于支撑天线的天线支撑装置。 天线支撑装置包括支撑臂，安装在支撑臂上的支架，围绕第一轴可旋转地连接到保持器的第一连接构件，围绕第二轴可旋转地连接到第一连接构件的第二连接构件，以及天线 支架固定在第二连接构件上，其中天线固定在天线支架上。
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5.发明授权Wireless transceiver apparatus having circuit unit forming frequency resonance mode when operated under reception mode 有权具有在接收模式下操作时形成频率共振模式的电路单元的无线收发装置公开(公告)号：US08649740B2
公开(公告)日：2014-02-11
申请号：US13175891
申请日：2011-07-04
Applicant: Yi-Chieh Lin , Yu-Hsin Chen
Inventor： Yi-Chieh Lin , Yu-Hsin Chen
IPC: H04B1/44
CPC classification number: H04B1/48
Abstract: A wireless transceiver apparatus is provided. The wireless transceiver apparatus includes a signal transmitting circuit, a circuit unit, and a signal receiving circuit. The signal transmitting circuit includes a first output port and is utilized for outputting a first transmission signal via the first output port in a transmission mode. The circuit unit is coupled to the first output port of the signal transmitting circuit. The signal receiving circuit includes a first receiving port and is utilized for receiving a first wireless communication signal via the first receiving port in a reception mode. The first output port is coupled to the first receiving port at a first node. The circuit unit forms a frequency resonance mode to increase an impedance value of the signal transmitting circuit seen by a signal at the first node.
Abstract translation: 提供了一种无线收发器装置。 无线收发装置包括信号发送电路，电路单元和信号接收电路。 信号发送电路包括第一输出端口，用于以传输模式经由第一输出端口输出第一传输信号。 电路单元耦合到信号发送电路的第一输出端口。 信号接收电路包括第一接收端口，用于以接收模式经由第一接收端口接收第一无线通信信号。 第一输出端口在第一节点处耦合到第一接收端口。 电路单元形成频率共振模式，以增加由第一节点处的信号所看到的信号发送电路的阻抗值。
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Patent Agency Ranking
公开(公告)号：US08487317B2
公开(公告)日：2013-07-16
申请号：US12382955
申请日：2009-03-27
Applicant: Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
Inventor： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.
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公开(公告)号：US08395560B2
公开(公告)日：2013-03-12
申请号：US12555685
申请日：2009-09-08
Applicant: Yi-Chieh Lin , Hung-Yuan Lin , San-Yi Kuo
Inventor： Yi-Chieh Lin , Hung-Yuan Lin , San-Yi Kuo
IPC: H01Q13/00
Abstract: A satellite antenna device is provided. The satellite antenna device includes a body, a wave guide, and a dielectric member. The wave guide is connected to the body. The dielectric member is connected to the wave guide, wherein the dielectric member comprises a first portion and a second portion, the first portion has a protruding structure, the protruding structure is formed surrounding a central axis of the wave guide, the second portion has a concave structure, and the concave structure corresponds to the protruding structure, and is matched therewith.
Abstract translation: 提供了一种卫星天线装置。 卫星天线装置包括主体，波导件和电介质部件。 波导连接到身体。 电介质构件连接到波导，其中电介质构件包括第一部分和第二部分，第一部分具有突出结构，突出结构围绕波导的中心轴线形成，第二部分具有 凹形结构，并且凹形结构对应于突出结构，并与之匹配。
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公开(公告)号：US20130015425A1
公开(公告)日：2013-01-17
申请号：US13546636
申请日：2012-07-11
Applicant: Yi-Chieh Lin , Rong-Ren Lee
Inventor： Yi-Chieh Lin , Rong-Ren Lee
CPC classification number: H01L33/06 , H01L27/153 , H01L33/0079 , H01L33/08 , H01L33/32
Abstract: A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer.
Abstract translation: 发光元件包括基板; 形成在所述基板上的第一发光层叠层; 形成在第一发光层叠层上的隧道层; 形成在隧道层上的第二发光层叠层; 以及形成在第二发光层叠层上的接触层。
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公开(公告)号：US20100315310A1
公开(公告)日：2010-12-16
申请号：US12555685
申请日：2009-09-08
Applicant: Yi-Chieh Lin , Hung-Yuan Lin , San-Yi Kuo
Inventor： Yi-Chieh Lin , Hung-Yuan Lin , San-Yi Kuo
Abstract: A satellite antenna device is provided. The satellite antenna device includes a body, a wave guide, and a dielectric member. The wave guide is connected to the body. The dielectric member is connected to the wave guide, wherein the dielectric member comprises a first portion and a second portion, the first portion has a protruding structure, the protruding structure is formed surrounding a central axis of the wave guide, the second portion has a concave structure, and the concave structure corresponds to the protruding structure, and is matched therewith.
Abstract translation: 提供了一种卫星天线装置。 卫星天线装置包括主体，波导件和电介质部件。 波导连接到身体。 电介质构件连接到波导，其中电介质构件包括第一部分和第二部分，第一部分具有突出结构，突出结构围绕波导的中心轴线形成，第二部分具有 凹形结构，并且凹形结构对应于突出结构，并与之匹配。
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公开(公告)号：US08884267B2
公开(公告)日：2014-11-11
申请号：US13546636
申请日：2012-07-11
Applicant: Yi-Chieh Lin , Rong-Ren Lee
Inventor： Yi-Chieh Lin , Rong-Ren Lee
CPC classification number: H01L33/06 , H01L27/153 , H01L33/0079 , H01L33/08 , H01L33/32
Abstract: A light-emitting element, comprises: a first active layer, generating a first light comprising a first dominant wavelength, wherein the first active layer comprises a first quantum well comprising a first quantum-well band gap and a second quantum well comprising a second quantum-well band gap, and the first quantum well and the second quantum well are alternately stacked to form the first active layer, wherein a difference between the first quantum-well band gap and the second quantum-well band gap is between 0.06eV and 0.1eV, and each of the first quantum-well and the second quantum-well is devoid of a barrier; and a second active layer on the first active layer, generating a second light comprising a second dominant wavelength; wherein a difference between the first dominant wavelength and the second dominant wavelength is 150nm to 220nm.
Abstract translation: 发光元件包括：第一有源层，产生包括第一主波长的第一光，其中所述第一有源层包括第一量子阱，所述第一量子阱包括第一量子阱带隙和包括第二量子阱的第二量子阱 并且第一量子阱和第二量子阱交替堆叠以形成第一有源层，其中第一量子阱带隙和第二量子阱带隙之间的差在0.06eV与0.1之间 eV，第一量子阱和第二量子阱中的每一个都没有屏障; 和在所述第一有源层上的第二有源层，产生包括第二主波长的第二光; 其中所述第一主波长和所述第二主波长之间的差为150nm至220nm。
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